CEL NX8341UN-AZ 1 310 nm algainas mqw-dfb laser diode for 10 gb/s application Datasheet

LASER DIODE
NX8341 Series
1 310 nm AlGaInAs MQW-DFB LASER DIODE
FOR 10 Gb/s APPLICATION
DESCRIPTION
The NX8341 Series is a 1 310 nm Multiple Quantum Well (MQW)
structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
subassembly) with InGaAs monitor PIN-PD in a receptacle type package
designed for XENPAK/XPAK/X2/XFP transceiver.
APPLICATIONS
• 10 G BASE-LW/LR
• 10 G Fiber Channel
FEATURES
• Internal optical isolator
• Optical output power
Pf = −2 dBm
• Low threshold current
lth = 8 mA TYP. @ TC = 25°C
• Wide operating temperature range
TC = −5 to +85°C
• InGaAs monitor PIN-PD
Document No. PL10525EJ03V0DS (3rd edition)
Date Published February 2007 NS CP(N)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2004, 2007
NX8341 Series
PACKAGE DIMENSIONS (UNIT : mm)
<R>
NX8341TB/TP
BOTTOM VIEW
φ 5.0
5.6
φ 2.99
φ 5.2±0.05
2.8
4.65
8.7
5.15
(4.05)
0.28±0.1
2–1.6
φ 5.2±0.05
5.55
3±0.1
1.3
φ 3.5±0.1
18.17
φ 3.5±0.1
OPTICAL
REFERENCE
PLANE
0.55
1.35
1.75
φ 2.92
2– φ 0.5
2–3.77
GND
GND
18– φ 0.2
1.5
Signal surface
0.13
φ 5.6±0.05
1.0±0.2
GND surface
6–R0.15
5–0.79
6–0.45
Remarks1. Receptacle is electrically isolated from CAN.
2. Characteristic impedance of flexible printed circuit is 25 Ω.
3. NX8341TP has no matching resistor installed.
2
Data Sheet PL10525EJ03V0DS
PD Cathode
GND
LD Cathode
LD Anode
GND
NC
5.7
NX8341 Series
NX8341TJ
BOTTOM VIEW
φ 4.75±0.1
5.6
φ 3.4±0.03
A
0.28±0.1
2–1.6
3±0.1
φ 5.2±0.05
5.55
⊥ 0.03 A
φ 5.2±0.05
2– φ 0.5
Signal surface
GND
GND
18– φ 0.2
0.13
1.5
2–3.77
1.0±0.2
GND surface
φ 5.6±0.05
2.8
4.65
OPTICAL
REFERENCE
PLANE
18.17
12.55 TYP.
4.045±0.05
1.1±0.05
0.55±0.05
6.99±0.2
φ 2.92±0.05
6–R0.15
5–0.79
6–0.45
PD Cathode
GND
LD Cathode
LD Anode
GND
NC
5.7
Remark Characteristic impedance of flexible printed circuit is 25 Ω.
Data Sheet PL10525EJ03V0DS
3
NX8341 Series
NX8341TL
BOTTOM VIEW
φ 7.4±0.1
5.6
2– φ 0.5
2–3.77
φ 5.2±0.05
Signal surface
GND
GND
18– φ 0.2
1.5
0.13
6–R0.15
5–0.79
6–0.45
5.7
PD Cathode
GND
LD Cathode
LD Anode
GND
NC
1.0±0.2
GND surface
φ 5.6±0.05
2.8
4.65
2–1.6
0.28±0.1
5.55
3±0.1
φ 5.2±0.05
OPTICAL
REFERENCE
PLANE
18.17
17.15 TYP.
0.55±0.05
φ 4.7±0.05
11.6±0.2
6.94±0.05
φ 4.64±0.05
Remark Characteristic impedance of flexible printed circuit is 25 Ω.
4
Data Sheet PL10525EJ03V0DS
NX8341 Series
NX8341UB
φ 5.0
φ 2.99
BOTTOM VIEW
φ 2.92
φ 3.5±0.1
8.7
(4.05)
5.15
5 4 3
OPTICAL
REFERENCE
PLANE
φ 5.2±0.05
φ 5.2±0.05
PIN CONNECTIONS
1
5.55
3±0.1
1.3
φ 3.5±0.1
5
14.5±0.6
1.0±0.2
10 Ω
5– φ 0.3±0.05
2
0.55
1.35
1.75
1
PD 2
G
3
4
10 Ω
LD
φ 2.7±0.2
P.C.D
φ 5.6±0.05
Remark Receptacle is electrically isolated from CAN.
Data Sheet PL10525EJ03V0DS
5
NX8341 Series
NX8341UH
4.75±0.1
BOTTOM VIEW
4.045±0.05
6.99±0.2
1.1±0.05
φ 2.92±0.05
1.0±0.2
14.5±0.6
3
5
OPTICAL
REFERENCE
PLANE
4
⊥ 0.03 A
PIN CONNECTIONS
φ 5.2±0.05
1
φ 5.2±0.05
L
5
5– φ 0.3±0.05
φ 2.7±0.2
P.C.D
φ 5.6±0.05
6
2
1
0.55±0.05
A
3.0±0.1
5.55
12.55 TYP.
φ 3.4±0.03
Data Sheet PL10525EJ03V0DS
2
LD
3
20 Ω
4
PD
G
NX8341 Series
NX8341UJ
4.75±0.1
4.045±0.05
1.1±0.05
6.99±0.2
1
2
5 4 3
OPTICAL
REFERENCE
PLANE
0.55±0.05
3.0±0.1
5.55
14.5±0.6
BOTTOM VIEW
φ 2.92±0.05
A
⊥ 0.03 A
PIN CONNECTIONS
φ 5.2±0.05
1
φ 5.2±0.05
5
1.0±0.2
12.55 TYP.
φ 3.4±0.03
5– φ 0.3±0.05
10 Ω
PD 2
G
3
4
10 Ω
LD
φ 2.7±0.2
P.C.D
φ 5.6±0.05
Data Sheet PL10525EJ03V0DS
7
NX8341 Series
NX8341UL
φ 7.4±0.1
φ 4.64±0.05
BOTTOM VIEW
φ 5.2±0.05
φ 5.2±0.05
17.15 TYP.
OPTICAL
REFERENCE
PLANE
5
10 Ω
PD 2
G
3
4
10 Ω
1.0±0.2
5– φ 0.3±0.05
14.5±0.6
LD
φ 2.7±0.2
P.C.D
φ 5.6±0.05
8
PIN CONNECTIONS
1
5.55
3.0±0.1
0.55±0.05
φ 4.7±0.05
2
5 4 3
11.6±0.2
6.94±0.05
1
Data Sheet PL10525EJ03V0DS
NX8341 Series
NX8341UN
BOTTOM VIEW
φ 7.4±0.1
φ 4.64±0.05
2
1
3
17.15 TYP.
0.55±0.05
φ 4.7±0.05
4
11.6±0.2
6.94±0.05
5
OPTICAL
REFERENCE
PLANE
PIN CONNECTIONS
1
2
L
5
LD
1.0±0.2
5– φ 0.3±0.05
14.5±0.6
φ 5.2±0.05
G
5.55
3.0±0.1
φ 5.2±0.05
3
20 Ω
4
PD
φ 2.7±0.2
P.C.D
φ 5.6±0.05
Data Sheet PL10525EJ03V0DS
9
NX8341 Series
ORDERING INFORMATION
Part Number
<R>
Receptacle Type
Note
NX8341TB-AZ*
LC, Electrically isolated
Differential input with flexible PCB
NX8341TJ-AZ*
LC
Differential input with flexible PCB
NX8341TL-AZ*
SC
Differential input with flexible PCB
NX8341TP-AZ*
LC, Electrically isolated
Differential input with flexible PCB, without matching resistor
NX8341UB-AZ*
LC, Electrically isolated
Differential input, 5-pin
NX8341UH-AZ*
LC
Single-ended, 5-pin
NX8341UJ-AZ*
LC
Differential input, 5-pin
NX8341UL-AZ*
SC
Differential input, 5-pin
NX8341UN-AZ*
SC
Single-ended, 5-pin
*Note Please refer to the last page of this data sheet “Compliance with
EU Directives for Pb-Free RoHS Compliance Information.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Storage Temperature
Tstg
−40 to +85
°C
Operating Case Temperature
TC
−5 to +85
°C
Forward Current of LD
IFLD
120
mA
Reverse Voltage of LD
VRLD
2
V
Forward Current of PD
IFPD
10
mA
Reverse Voltage of PD
VRPD
20
V
Lead Soldering Temperature
Tsld
350 (3.5 sec.)
°C
Optical Output Power
Pf
5
mW
10
Data Sheet PL10525EJ03V0DS
NX8341 Series
ELECTRO-OPTICAL CHARACTERISTICS (TC = −5 to +85°C, BOL, unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
Pf
Peak Emission Wavelength
λp
CW, Pf = −2 dBm
1 290
SMSR
CW, Pf = −2 dBm
30
Threshold Current
Ith
CW, TC = 25°C
ηd
0.02
CW, Pf = −2 dBm
0.005
Operation Voltage
Vop
CW, Pf = −2 dBm
Monitor Current
Im
Pf = −2 dBm, VR = 1.5 V
Monitor Dark Current
ID
nm
dB
2
CW, Pf = −2 dBm, TC = 25°C
Unit
dBm
1 330
8
CW
Differential Efficiency
MAX.
−2
Mean Optical Output Power
Side Mode Suppression Ratio
TYP.
20
mA
40
0.025
0.04
W/A
0.05
2
V
700
µA
VR = 1.5 V, TC = 25°C
5
nA
VR = 1.5 V
50
*1
90
Rise Time
tr
20-80%
*1
30
50
ps
Fall Time
tf
20-80%
*1
40
50
ps
10 GbE, 10 G FC
*1
Extinction Ratio
Ex
Tracking Error
4
5
−1.0
γ
*2
Input Impedance
Zin
Connector Repeatability
CR
dB
1.0
Ω
25
−1.0
With master pigtail
dB
1.0
dB
31
*1 9.95/10.3/10.5 Gb/s, PRBS 2 −1, NRZ, Duty Cycle = 50%
*2 Tracking Error: γ
Pf
γ = 10 log
(mW)
Pf
Pf @ 25˚C
[dB]
TC = 25˚C
Pf @ 25˚C
TC = –5 to +85˚C
Pf
0
Im
Im
(mA)
Data Sheet PL10525EJ03V0DS
11
NX8341 Series
REFERENCE
Document Name
Opto-Electronics Devices Pamphlet
12
Document No.
PX10160E
Data Sheet PL10525EJ03V0DS
NX8341 Series
• The information in this document is current as of February, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
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customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
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M8E 02. 11-1
Data Sheet PL10525EJ03V0DS
13
NX8341 Series
SAFETY INFORMATION ON THIS PRODUCT
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
Warning
Laser Beam
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
Caution
Optical Fiber
A glass-fiber is attached on the product. Handle with care.
• When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part
or fragments.
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Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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