ETC2 OM6003ST Power mosfet in hermetic isolated jedec to 257aa package Datasheet

OM6001ST OM6003ST OM6101ST OM6103ST
OM6002ST OM6004ST OM6102ST OM6104ST
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-257AA PACKAGE
100V Thru 500V, Up To 14 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Bi-Lateral Zener Gate Protection (Optional)
Fast Switching, Low Drive Current
Ease Of Paralleling For Added Power
Low RDS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6101ST series.
MAXIMUM RATINGS
PART NUMBER
OM6001ST/OM6101ST
OM6002ST/OM6102ST
OM6003ST/OM6103ST
OM6004ST/OM6104ST
Note:
VDS
100 V
200 V
400 V
500 V
RDS(on)
.20
.44
1.05
1.60
OM6101ST thru OM6104ST is supplied with zener gate protection.
OM6001ST thru OM6004ST is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS
OM6001ST - 6004ST
WITH ZENER CLAMPS
OM6101ST - 6104ST
1 - DRAIN
1 - DRAIN
3 - GATE
3 - GATE
ZENERS
2 - SOURCE
2 - SOURCE
4 11 R4
Supersedes 1 07 R3
3.1 - 71
ID
14 A
9A
5.5 A
4.5 A
3.1
(TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6101ST / OM6001ST (100V)
Parameter
BVDSS Drain-Source Breakdown
Voltage
Min. Typ. Max. Units Test Conditions
100
(TC = 25°C unless otherwise noted)
STATIC P/N OM6102ST / OM6002 ST (200V)
V
Parameter
VGS = 0,
BVDSS Drain-Source Breakdown
ID = 250 mA
Voltage
Min. Typ. Max. Units Test Conditions
200
V
VGS = 0,
ID = 250 mA
VGS(th)
Gate-Threshold Voltage
4.0
V
VDS = VGS, ID = 250 mA
VGS(th)
Gate-Threshold Voltage
4.0
V
VDS = VGS, ID = 250 mA
IGSS
Gate-Body Leakage (OM6101)
± 500
nA
VGS = ± 12.8 V
IGSS
Gate-Body Leakage (OM6102)
± 500
nA
VGS = ± 12.8 V
IGSS
Gate-Body Leakage (OM6001)
± 100
nA
VGS = ± 20 V
IGSS
Gate-Body Leakage (OM6002)
± 100
nA
VGS = ± 20 V
IDSS
Zero Gate Voltage Drain
0.1
0.25
mA
VDS = Max. Rat., VGS = 0
IDSS
Zero Gate Voltage Drain
0.1
0.25
mA
VDS = Max. Rat., VGS = 0
0.2
1.0
mA
0.2
1.0
mA
2.0
Current
On-State Drain Current1
14
A
1.2
Voltage1
RDS(on) Static Drain-Source On-State
1.60
V
RDS(on) Static Drain-Source On-State
ID(on)
On-State Drain Current1
9.0
VDS(on) Static Drain-Source On-State
VGS = 10 V, ID = 8 A
1.25
Voltage1
RDS(on) Static Drain-Source On-State
RDS(on) Static Drain-Source On-State
V
VGS = 10 V, ID = 5.0 A
VGS = 10 V, ID = 5.0 A
VGS = 10 V, ID = 5.0 A,
TC = 125 C
DYNAMIC
(W )
3.1 - 72
DYNAMIC
VDS 2 VDS(on), VGS = 10 V
0.88
Resistance1
TC = 125 C
2.2
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
A
0.44
Resistance1
VGS = 10 V, ID = 8 A,
0.40
Resistance1
VDS 2 VDS(on), VGS = 10 V
VGS = 10 V, ID = 8 A
0.20
Resistance1
Current
TC = 125° C
gfs
Forward Transductance1
gfs
Ciss
Input Capacitance
750
pF
Forward Transductance1
VGS = 0
Ciss
Input Capacitance
780
Coss
Output Capacitance
250
pF
pF
VDS = 25 V
Coss
Output Capacitance
150
pF
Crss
Reverse Transfer Capacitance
VDS = 25 V
100
pF
f = 1 MHz
Crss
Reverse Transfer Capacitance
55
pF
f = 1 MHz
td(on)
tr
Turn-On Delay Time
15
ns
VDD = 30 V, ID @ 8 A
td(on)
Turn-On Delay Time
9
ns
VDD = 75V, ID @ 5.0 A
Rise Time
35
ns
Rg = 7.5 W , VDS = 10 V
tr
Rise Time
18
ns
Rg = 7.5 W , VGS =10 V
td(off)
Turn-Off Delay Time
38
ns
td(off)
Turn-Off Delay Time
45
ns
tf
Fall Time
23
ns
tf
Fall Time
27
ns
4.0
S(W ) VDS 2 VDS(on), ID = 8 A
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
(Body Diode)
- 14
A
- 56
A
- 2.5
- 2.5
V
V
3.0
(W )
ID(on)
VDS(on) Static Drain-Source On-State
VDS = 0.8 Max. Rat., VGS = 0,
2.0
5.8
S(W ) VDS 2 VDS(on), ID = 5.0 A
VGS = 0
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
D
IS
Continuous Source Current
(Body Diode)
symbol showing
-9
A
- 36
A
-2
-2
V
V
Modified MOSPOWER
G
ISM
Source Current1
(Body Diode)
VSD
Diode Forward Voltage1
VSD
Diode Forward Voltage1
trr
Reverse Recovery Time
100
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ns
G
ISM
the integral P-N
Junction rectifier.
D
symbol showing
S
Source Current1
(Body Diode)
TC = 25 C, IS = -14 A, VGS = 0
VSD
Diode Forward Voltage1
TC = 25 C, IS = -12 A, VGS = 0
VSD
Diode Forward Voltage1
TJ = 150 C, IF = IS,
trr
Reverse Recovery Time
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
250
ns
the integral P-N
Junction rectifier.
S
TC = 25 C, IS = -9 A, VGS = 0
TC = 25 C, IS = -8 A, VGS = 0
TJ = 150 C, IF = IS,
dlF/ds = 100 A/ms
OM6001ST - OM6104ST
3.1
ELECTRICAL CHARACTERISTICS:
ELECTRICAL CHARACTERISTICS:
(TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6103ST / OM6003ST (400V)
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
400
(TC = 25°C unless otherwise noted)
STATIC P/N OM6104ST / OM6004ST (500V)
V
Parameter
VGS = 0,
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
ID = 250 mA
Voltage
500
V
VGS = 0,
ID = 250 mA
VGS(th)
Gate-Threshold Voltage
4.0
V
VDS = VGS, ID = 250 mA
VGS(th)
Gate-Threshold Voltage
4.0
V
VDS = VGS, ID = 250 mA
IGSS
Gate-Body Leakage (OM6103)
± 500
nA
VGS = ± 12.8 V
IGSS
Gate-Body Leakage (OM6104)
± 500
nA
VGS = ± 12.8 V
IGSS
Gate-Body Leakage (OM6003)
± 100
nA
VGS = ± 20 V
IGSS
Gate-Body Leakage (OM6004)
± 100
nA
VGS = ± 20 V
IDSS
Zero Gate Voltage Drain
0.1
0.25
mA
VDS = Max. Rat., VGS = 0
IDSS
Zero Gate Voltage Drain
0.1
0.25
mA
VDS = Max. Rat., VGS = 0
0.2
1.0
mA
0.2
1.0
mA
2.0
Current
ID(on)
On-State Drain Current1
5.5
VDS(on) Static Drain-Source On-State
A
2.4
Voltage1
RDS(on) Static Drain-Source On-State
3.15
V
RDS(on) Static Drain-Source On-State
VDS 2 VDS(on), VGS = 10 V
ID(on)
On-State Drain Current1
4.5
VDS(on) Static Drain-Source On-State
VGS = 10 V, ID = 3.0 A
3.25 4.00
Voltage1
RDS(on) Static Drain-Source On-State
RDS(on) Static Drain-Source On-State
2.9
DYNAMIC
VDS 2 VDS(on), VGS = 10 V
V
VGS = 10 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A,
3.3
TC = 125 C
DYNAMIC
(W )
gfs
Forward Transductance1
gfs
Ciss
Input Capacitance
700
pF
Forward Transductance1
VGS = 0
Ciss
Input Capacitance
700
Coss
Output Capacitance
70
pF
pF
VDS = 25 V
Coss
Output Capacitance
90
pF
Crss
Reverse Transfer Capacitance
VDS = 25 V
20
pF
f = 1 MHz
Crss
Reverse Transfer Capacitance
30
pF
f = 1 MHz
td(on)
tr
Turn-On Delay Time
18
ns
VDD = 175 V, ID @ 3.0 A
td(on)
Turn-On Delay Time
18
ns
VDD = 225 V, ID @ 2.5 A
Rise Time
20
ns
Rg = 10 W ,VGS = 10 V
tr
Rise Time
20
ns
Rg = 7.5 W , VGS = 10 V
td(off)
Turn-Off Delay Time
40
ns
td(off)
Turn-Off Delay Time
42
ns
tf
Fall Time
25
ns
tf
Fall Time
25
ns
3.0
3.6
S(W ) VDS 2 VDS(on), ID = 3.0 A
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
(Body Diode)
(Body Diode)
Voltage1
Diode Forward
VSD
Diode Forward Voltage1
trr
Reverse Recovery Time
- 22
A
D
IS
- 1.6
- 2.5
470
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
V
V
ns
Continuous Source Current
(Body Diode)
symbol showing
ISM
the integral P-N
Junction rectifier.
S(W ) VDS 2 VDS(on), ID = 2.5 A
VGS = 0
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
G
Source Current1
VSD
A
2.8
S
Source Current1
(Body Diode)
Voltage1
TC = 25 C, IS = -5.5 A, VGS = 0
VSD
Diode Forward
TC = 25 C, IS = -4.5 A, VGS = 0
VSD
Diode Forward Voltage1
TJ = 150 C, IF = IS,
trr
Reverse Recovery Time
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
430
- 4.5
A
- 18
A
- 1.4
-2
V
V
ns
Modified MOSPOWER
D
symbol showing
the integral P-N
G
Junction rectifier.
S
TC = 25 C, IS = -4.5 A, VGS = 0
TC = 25 C, IS = -4 A, VGS = 0
TJ = 150 C, IF = IS,
dlF/ds = 100 A/ms
3.1
OM6001ST - OM6104ST
ISM
- 5.5
2.5
(W )
3.1 - 73
Resistance1
TC = 125 C
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
A
1.6
Resistance1
VGS = 10 V, ID = 3.0 A,
2.0
Resistance1
Current
TC = 125° C
VGS = 10 V, ID = 3.0 A
1.05
Resistance1
VDS = 0.8 Max. Rat., VGS = 0,
2.0
OM6001ST - OM6104ST
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
OM6001ST OM6002ST OM6003ST OM6004ST
Units
OM6101ST OM6102ST OM6103ST OM6104ST
Parameter
VDS
Drain-Source Voltage
100
200
400
500
V
VDGR
Drain-Gate Voltage (RGS = 1 M )
100
200
400
500
V
ID @ TC = 25°C
Continuous Drain Current2
±14
±9
±5.5
±4.5
A
ID @ TC = 100°C
Continuous Drain Current2
±9
±6
±3.5
±3
A
IDM
Pulsed Drain Current1
±56
±36
±22
±18
A
PD @ TC = 25°C
Maximum Power Dissipation
50
50
50
50
W
PD @ TC = 100°C
Maximum Power Dissipation
20
20
20
20
W
Junction To Case
Linear Derating Factor
0.4
0.4
0.4
0.4
W/°C
Junction To Ambient
Linear Derating Factor
.015
.015
.015
.015
W/°C
TJ
Operating and
Tstg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Lead Temperature
(1/16" from case for 10 secs.)
300
300
300
300
°C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitations = 16 amps
THERMAL RESISTANCE (MAXIMUM) at TA = 25°C
RthJC
Junction-to-Case
2.5
°C/W
RthJA
Junction-to-Ambient
65
°C/W Free Air Operation
MECHANICAL OUTLINE
WITH PIN CONNECTION
3.1
PD - POWER DISSIPATION (WATTS)
POWER DERATING
.200
.190
.420
.410
90
.045
.035
75
RθJC = 2.5° C/W
60
.665
.645
.150
.140
45
.537
.527
.430
.410
30
1 2 3
15
.038 MAX.
0
0
25
50
75 100 125 150 175
TC - CASE TEMPERATURE (C°)
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.035
.025
.750
.500
.005
.100 TYP.
.120 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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