IRF OM75L60CMIB Cermod-tm hermetic high power modules, three phase bridge, igbtâ Datasheet

Patent Pending
OM100L60CMIS,
OM75L60CMIS,
OM75L60CMIB
CERMOD™ HERMETIC HIGH POWER MODULES,
THREE PHASE BRIDGE, IGBT’S
75 & 100 A, 600V Three Phase Bridge
Configuration in Ceramic to Metal
Sealed Modules
FEATURES
•
•
•
•
•
•
•
Rugged, Lightweight Hermetic Ceramic Package
NPT IGBT Technology
Soft Recovery Rectifiers
Zener Gate Protection
Short Circuit Capability
-55 C to +150 C Operating Temperature Range
Hi-Rel Screened Available
DESCRIPTION
C E R M O D ™ modules are isolated fully hermetic power modules which combine the latest
NPT IGBT and Soft Recovery Rectifier technology housed in a low thermal resistance
ceramic to metal sealed light weight package. This series of CERMOD™ power modules are
offered in a three phase bridge configuration as Phase Leg and chopper configurations.
Designed for tough environments, these high power modules are ideally suited in motor
control, inverters, switching power supplies, in aerospace, defense, transportation and high
power industrial equipment and systems.
GENERAL CHARACTERISTICS @ 25°C
PART NUMBER
V CE, Volts
IC A M P S
V CE (sat) Volts
CONFIGURATION
OM100L60CMIS
600
100
2.5
3 Phase Bridge
OM75L60CMIS
600
75
2.5
3 Phase Bridge
OM75L60CMIB
600
75
2.5
3 Phase Bridge
& Braking Transistor
9 5 R0
205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246
Visit Our Web Site at www.omnirel.com
OM100L60CMIS
ELECTRICAL CHARACTERISTICS: (Tc= 25° C unless otherwise specified)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage,
GE =0V
V
V CES
Zero Gate Voltage Collector Current,
GE =0, C
VE V=600V
ICES
Gate Emitter Leakage Current,
GE =+/-15V,
V
CEV=0V
IGES
ON CHARACTERISTICS
Gate Threshold Voltage,
CE =V GE,
V IC =6mA
V GE(TH)
Collector Emitter Saturation GE
Voltage,
=15V, IC=100A
V
V CE(SAT)
DYNAMIC CHARACTERISTICS
Fwd. Transconductance
Input Capacitance
Output Capacitance
Rev. Transfer Capacitance
V CE =5V, CI=100A
V GE =0
V CE =25V
f=1.0MHz
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Rise Time
V CC = 300V,C =100A
I
Turn-on Losses
R
V GE =+15/-10V,G =10Ω
Turn-off Delay Time
L=100µH,Tj=125
°C
Fall Time
Turn-off Losses
DIODE CHARACTERISTICS
Maximum Forward Voltage
Reverse Recovery
Characteristics
IF=100A, Tj=25
°C
Tj=125
°C
V R =300V, Tj=25
°C
°C
IF=100A, Tj=125
dI/dt=-1080A/
µS Tj=25
°C
Tj=125
°C
Tj=25°C
Tj=125
°C
Min.
Max
600
4.5
6.0
2.0
Unit
2
V
µA
µA
6.5
2.5
V
V
25
gfs
Cies
Coes
Cres
55
4.5
0.7
1.7
S
nF
nF
nF
t(on)
tr
Eon
td(off)
tf
Eoff
192
81
5.4
285
44
1.4
nS
nS
mJ
nS
nS
mJ
VF
Qrr
Irr
trr
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)R thJC
Thermal Resistance, Junction to Case (Per Diode)
R thJC
Maximum Junction Temperature
TjMAX
Isolation Voltage
VisRMS
Screw Torque
-Mounting
Module Weight
-
Rev.05
4/15/
99
Typ.
1.4
1.5
2
3.7
51
68
124
215
15
250
1.8
1.9
V
µC
A
nS
0.35 °C/W
0.6 °C/W
150
°C
V
20
inlb
Grams
Omnirel LLC
205 Crawford Street, Leominster, MA 01453
www.omnirel.com
(978) 534-5776 FAX (978) 537-4246
OM100L60CMIS
IGBT Collector Current vs Collector Emitter
IGBT Collector Current vs Collector Emitter
Tj=+125C
Tj=25C
120
120
13Vge
13Vge
100
100
15Vge
11Vge
15Vge
80
80
Ic(A)60
Ic(A)60
11Vge
9Vge
9Vge
40
40
20
20
0
0
0
1
2
3
4
5
0
6
1
2
3
Vce(V)
6
Vce=100V,Tj=25C
Tj=-55C
13Vge
100
5
Switching Energy vs Collector Curren
IGBT Collector Current vs Collector Emitter
120
4
Vce(V)
6
5
15Vge
11Vge
Ic(A)
60
Energy(mJ)
80
9Vge
40
4
Eon
3
Eof
2
1
20
0
0
0
1
2
3
Vce(V)
4
5
6
0
50
Ic(A)
100
150
Switching Energy vs Gate Resister
Switcing Energy vs Temperature Vce=300V,Ic=
7
8
6
7
Vce=300V,Ic=100,Tj=25C
4
Eon
3
Eof
Energy(mJ)
Energy(mJ)
6
5
5
4
Eon
3
Eof
2
2
1
1
0
0
0
25
50
75
T(C)
100
125
5
150
10
15
20
Rg(ohms)
25
30
35
Diode Forward Current vs. Forward Vo
Vge =0V
120
100
80
+25C
If(A)60
+125C
-55C
40
20
0
0
0.25
0.5 0.75
1
1.25 1.5
1.75
2
Vf(V)
Rev.05
4/15/
99
Omnirel LLC
205 Crawford Street, Leominster, MA 01453 U
www.omnirel.com
(978) 534-5776 FAX (978) 537-4246
OM100L60CMIS
P
Gu
Gv
Eu
Ev
Gw
Ew
U
V
W
N
Gx
Gy
Ex
Ey
Gz
Ez
OM75L60CMIS
ELECTRICAL CHARACTERISTICS (Tc= 25° C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage,
CE =0V
V
Zero Gate Voltage Collector Current,
GE =0, C
VE V=600V
Gate Emitter Leakage Current,
GE =+/-15V,
V
CEV=0V
ON CHARACTERISTICS
Gate Threshold Voltage,
CE =V GE,
V IC =6mA
Collector Emitter Saturation GE
Voltage,
=15V, IC=75A
V
DYNAMIC CHARACTERISTICS
Fwd. Transconductance
Input Capacitance
Output Capacitance
Rev. Transfer Capacitance
V CE =5V, CI=75A
V GE =0
V CE =25V
f=1.0MHz
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Rise Time
V CC = 300V,C =75A
I
Turn-on Losses
V GE =+15/-10V,G =10Ω
R
Turn-off Delay Time
L=100µH,Tj=125
°C
Fall Time
Turn-off Losses
DIODE CHARACTERISTICS
Maximum Forward Voltage
Reverse Recovery
Characteristics
°C
IF=75A, Tj=25
Tj=125
°C
V R =300V, Tj=25
°C
IF=75A, Tj=125
°C
dI/dt=-1200A/
µS Tj=25
°C
Tj=125
°C
Tj=25°C
Tj=125
°C
Symbol
Min.
V CES
ICES
IGES
600
V GE(TH)
V CE(SAT)
4.5
Max
5.8
2.5
Unit
2
V
µA
µA
6.5
2.9
V
V
25
gfs
C IES
C OES
C RES
36
3.7
1.1
1.9
S
nF
nF
nF
t(on)
tr
Eon
td(off)
tf
Eoff
60
65
nS
nS
mJ
nS
nS
mJ
90
80
VF
1.4
Qrr
µC
Irr
4
6.5
40
trr
85
nS
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)R thJC
Thermal Resistance, Junction to Case (Per Diode)
R thJC
Maximum Junction Temperature
TjMAX
Isolation Voltage
VisRMS
Screw Torque
-Mounting
Module Weight
-
Rev.02
4/22/99
Typ.
15
250
2.0
V
A
0.45 °C/W
0.8 °C/W
150
°C
V
20
inlb
Grams
Omnirel LLC
205 Crawford Street,
www.omnirel.com
(978) 534-5776 FAX (978) 537-4246
OM75L60CMIS
IGBT Collector Current vs Collector Emitter
Tj=25C
100
13Vge
90
80
15Vge
70
11Vge
60
Ic(A)50
9Vge
40
30
20
10
7Vge
0
0
2
4
6
8
10
Vce(V)
IGBT Collector Current vs Collector Emitter
Tj=+125C
90
13Vge
80
70
15Vge
11Vge
60
50
9Vge
Ic(A)
40
30
20
10
7Vge
0
0
2
4
6
8
10
Vce(V)
Diode Forward Current vs. Forward Vo
Vge =0V
80
70
60
50
+25C
40
If(A)
+125C
30
20
10
0
0
1
2
3
V f(V)
Rev.02
4/22/99
Omnirel LLC
205 Crawford Stree
www.omnirel.com
(978) 534-5776 FAX (978) 537-4246
OM75L60CMIS
P
Gu
Gv
Eu
Ev
Gw
Ew
U
V
W
Gx
Gy
Ex
Ey
N
Equivalent circuit
Gz
Ez
OM75L60CMIB
ELECTRICAL CHARACTERISTICS (Tc= 25° C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage,
CE =0V
V
Zero Gate Voltage Collector Current,
GE =0, C
VE V=600V
Gate Emitter Leakage Current,
GE =+/-15V,
V
CEV=0V
ON CHARACTERISTICS
Gate Threshold Voltage,
CE =V GE,
V IC =6mA
Collector Emitter Saturation GE
Voltage,
=15V, IC=75A
V
DYNAMIC CHARACTERISTICS
Fwd. Transconductance
Input Capacitance
Output Capacitance
Rev. Transfer Capacitance
V CE =5V, CI=75A
V GE =0
V CE =25V
f=1.0MHz
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Rise Time
V CC = 300V,C =75A
I
Turn-on Losses
V GE =+15/-10V,G =10Ω
R
Turn-off Delay Time
L=100µH,Tj=125
°C
Fall Time
Turn-off Losses
DIODE CHARACTERISTICS
Maximum Forward Voltage
Reverse Recovery
Characteristics
IF=75A, Tj=25
°C
Tj=125
°C
V R =300V, Tj=25
°C
IF=75A, Tj=125
°C
dI/dt=-1200A/
µS Tj=25
°C
Tj=125
°C
Tj=25°C
Tj=125
°C
Symbol
Min.
V CES
ICES
IGES
600
V GE(TH)
V CE(SAT)
4.5
Max
5.8
2.5
Unit
2
V
µA
µA
6.5
2.9
V
V
25
gfs
C IES
C OES
C RES
36
3.7
1.1
1.9
S
nF
nF
nF
t(on)
tr
Eon
td(off)
tf
Eoff
60
65
nS
nS
mJ
nS
nS
mJ
90
80
VF
1.4
Qrr
µC
Irr
4
6.5
40
trr
85
nS
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)R thJC
Thermal Resistance, Junction to Case (Per Diode)
R thJC
Maximum Junction Temperature
TjMAX
Isolation Voltage
VisRMS
Screw Torque
-Mounting
Module Weight
-
Rev.06
4/26/99
Typ.
15
250
2.0
V
A
0.45 °C/W
0.8 °C/W
150
°C
V
20
inlb
Grams
Omnirel LLC
205 Crawford Street, Leominster, MA 01453 US
www.omnirel.com
(978) 534-5776 FAX (978) 537-4246
OM75L60CMIB
IGBT Collector Current vs Collector Emitter
Tj=25C
100
13Vge
90
80
15Vge
70
11Vge
60
Ic(A)50
9Vge
40
30
20
10
7Vge
0
0
2
4
6
8
10
Vce(V)
IGBT Collector Current vs Collector Emitter
Tj=+125C
90
13Vge
80
70
15Vge
11Vge
60
50
9Vge
Ic(A)
40
30
20
10
7Vge
0
0
2
4
6
8
10
Vce(V)
Diode Forward Current vs. Forward Vo
Vge =0V
80
70
60
50
+25C
40
If(A)
+125C
30
20
10
0
0
1
2
3
Vf(V)
Rev.06
4/26/99
Omnirel LLC
205 Crawford Street, Leominster, MA 01453
www.omnirel.com
(978) 534-5776 FAX (978) 537-4246
OM75L60CMIB
P
Gu
Gv
Eu
Ev
Gw
Ew
Tc+
B
U
V
W
TC
Tc-
N
GB
Gx
Gy
Gz
EB
Ex
Ey
Ez
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