Panasonic ON3731 Optoisolator Datasheet

Optoisolators (Photocouplers)
CNZ3731, CNC7C501, CNZ3734
CNC2S501, CNC7C502, CNC7H501
0 to
Programmable controllers
1
2
3
4
5
6
7
8
0
4
1
16
3
2
3
15
14
Top View
CNC7C501
CNC7C502
1
8
4
5
13
12
2
3
7
6
6
7
11
10
5
8
Top View
5˚
to 1
2.54 min.
8-0.5±0.1
8-1.2±0.15
2.54±0.25
+0.15
16
15
14
13
12
11
10
9
3.85±0.3
2.0
CNZ3734
CNC7H501
0
5˚
to 1
1,3: Anodee
2,4: Cathode
5,7: Emitter
6,8: Collector
5.2 max.
0.5 min.
7.62±0.3
6.2±0.5
Signal transfer between circuits with different potentials and impedances
CNZ3731
CNC2S501
5˚
to 1
LED Mark
FAX
Pin Connection
+0.15
8
7
6
5
CNZ3734/CNC7H501
19.82±0.5
Telephone exchange
Unit : mm
0.25 –0
9.66±0.3
1
2
3
4
7.62±0.3
6.2±0.5
Applications
Telephones
1: Anode
2: Cathode
3: Emitter
4: Collector
Unit : mm
2.54 min.
+0.15
A-type models have a guaranteed internal insulating distance of 0.4 mm
15˚
5.2 max.
0.5 min.
0
UL listed (UL File No. E79920)
0 to
CNC7C501/CNC7C502
Small DIL package for saving mounting space
4
15˚
0.25 –0
High current transfer ratio with Darlington phototransistor output :
CTR = 4000% (typ.)
High I/O isolation voltage : VISO ≥ 5000 Vrms
4-0.5±0.1
4-1.2±0.15
2.54±0.25
3.85±0.3
2.0
7.62±0.3
6.2±0.5
3.85±0.3
2.0
High collector to emitter breakdown voltage : VCEO > 300 V,
A type : VCEO > 350 V
2.54 min.
4
3
0.25 –0
4.58±0.3
1
2
LED Mark
Features
2
5.2 max.
0.5 min.
LED Mark
The CNZ3731 series of optoisolators consist of a GaAs infrared
LED which is optically coupled with a Si NPN Darlington
phototransistor, and housed in a small DIL package. The series
provides high I/O isolation voltage and high collector/emitter isolation
voltage, as well as a high current transfer ratio (CTR). This opto
isolator series also includes the two-channel CNC7C501 and the fourchannel CNZ3734, and A type of these models with increased
collector to emitter breakdown voltage (VCEO > 350V).
1
Unit : mm
CNZ3731/CNC2S501
Overview
16-0.5±0.1
16-1.2±0.15
2.54±0.25
Optoisolators
1 , 3 , 5 , 7 : Anode
2 , 4 , 6 , 8 : Cathode
5˚ 9,11,13,15: Emitter
1
0 to
10,12,14,16: Collector
9
Top View
1
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501
Optoisolators (Photocouplers)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings
CNC7C501
CNZ3734
CNZ3731
CNC7C502
CNC7H501
CNC2S501
Unit
Reverse voltage (DC)
VR
6
6
V
Forward current (DC)
Input (Light
emitting diode) Pulse forward current
IF
50
50
mA
IFP*1
1
1
A
Power dissipation
Collector current
Output (Photo Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Total power dissipation
Isolation voltage, input to output
PD
*2
75
75
mW
IC
150
150
mA
VCEO
300
350
V
VECO
0.3
0.3
V
PC
*3
PT
150
300
150
mW
320
200
320
200
mW
*4
5000
5000
Vrms
Operating ambient temperature
Topr
–30 to +100
–30 to +100
˚C
Storage temperature
Tstg
–55 to +125
–55 to +125
˚C
*1
*2
*3
*4
VISO
300
Pulse width ≤ 100 µs, repeat 100 pps
Input power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C.
Output power derating ratio is 3.0 mW/˚C at Ta ≥ 25˚C (CNZ3731, CNC2S501).
Output power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C (CNC7C501, CNC2S502, CNZ3734, CNC7H501).
AC 1min., RH < 60 %
Electrical Characteristics (Ta = 25˚C)
Parameter
Reverse current (DC)
Input
Forward voltage (DC)
characteristics
Capacitance between pins
Collector cutoff current
Output
characteristics Collector to emitter capacitance
DC current transfer ratio
Symbol
Conditions
IR
VR = 3V
VF
IF = 50mA
Ct
VR = 0V, f = 1MHz
ICEO
VCE = 200V
CC
VCE = 10V, f = 1MHz
CTR*1
VCE = 2V, IF = 1mA
*2
2
nA
pF
µs
Rt = 100Ω
15
Collector to emitter saturation voltage VCE(sat) IF = 1mA, IC = 2mA
*3
200
10
current transfer ratio (CTR) is a ratio of output current against DC input current.
IC
× 100 (%)
IF
tr : Time required for the collector current to increase from 10% to 90% of its final value
tf : Time required for the collector current to decrease from 90% to 10% of its initial value
1000
V
pF
40
VISO = 500V
CTR =
1.5
30
VCC = 10V, IC = 10mA,
RISO
*1 DC
µA
%
Isolation resistance, input to output
Transfer
characteristics Rise time
tf*3
Unit
10
pF
f = 1MHz
Fall time
1.35
max
0.7
CISO
tr
typ
4000
Isolation capacitance, input to output
*2
min
Ω
1011
µs
1.0
V
Optoisolators (Photocouplers)
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501
PD — Ta
PC — Ta
IFP — DR
10 5
100
50
0
– 30
0
25
50
75
100
IFP (mA)
150
300
CNZ3731
CNC2S501
200
CNC7C501/
CNC7C502
CNZ3734/
CNC7H501
100
0
– 30
125
Allowable pulse forward current
PC (mW)
400
Collector power dissipation
LED Power dissipation
PD (mW)
200
Ambient temperature Ta (˚C )
0
25
50
75
100
Pulse width ≤ 100µs
Ta = 25˚C
10 4
10 3
10 2
10
10 –3
125
10 –2
Ambient temperature Ta (˚C )
IF — VF
IC — VCE
60
10 –1
1
Duty ratio DR
IC — VCE(sat)
10 3
160
Ta = 25˚C
Pc(max.)
Ta = 25˚C
Ta = 25˚C
IF = 5mA
30
20
IC (mA)
40
120
3mA
2mA
80
10 2
2mA
1mA
Collector current
IC (mA)
IF = 5mA
Collector current
Forward current
IF (mA)
50
1.5mA
1mA
40
10
0.5mA
1
10
0.5mA
0
0.4
0.8
1.2
1.6
2.0
0
2.4
Forward voltage VF (V)
0
10
1
10
Forward current IF (mA)
10 2
0.4
0.8
10 4
10 3
1
1.2
Collector saturation voltage VCE(sat) (V)
Relative CTR — Ta
10 5
10 2
10 –1
0
120
VCE = 2V
Ta = 25˚C
DC current transfer ratio CTR (%)
IC (mA)
Collector current
10 –1
8
CTR — IF
VCE = 2V
Ta = 25˚C
1
6
10 6
10 2
10 –1
10 –1
4
Collector to emitter voltage VCE (V)
IC — IF
10 3
2
10
Forward current IF (mA)
10 2
Relative DC current transfer ratio CTR (%)
0
IF = 1mA
VCE = 2V
100
80
60
40
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
3
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501
VCE(sat) — Ta
ICEO — Ta
Ta = 25˚C
VCE = 200V
IF = 1mA
IC = 2mA
1.0
0.8
10 –7
10 –8
Dark current
ICEO (A)
1.2
ICEO (A)
10 –6
1.4
Dark current
Collector to emitter saturation voltage VCE(sat) (V)
ICEO — VCE
10 –5
1.6
10 –9
10 –8
10 –9
10 –10
0.6
0.4
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
10 –11
– 40 – 20
VCC = 10V
IC = 10mA
Ta = 25˚C
0
20
40
60
80
10 –10
10
100
Ambient temperature Ta (˚C )
Response time —
External load resistance characteristics
10 3
Optoisolators (Photocouplers)
10 –2
10 –3
Collector to emitter voltage VCE (V)
Response time measurement circuit
tr
10 2
(µs)
Response time
Sig.IN
tf
td
ts
VCC
V1
5ms
10
V1
50Ω
,,,,
,,,
,
RL
1
10 –1
10 –2
10 –1
1
90%
10%
V2
td
tr
ts
tf
10
External load resistance RL (kΩ)
Frequency characteristics
10
Measurement circuit of
frequency characteristics
VCE = 4V
Ta = 25˚C
IC = 10mA
RL = 10Ω
50kΩ
16V
100µF
Sig.OUT
+
50Ω
,,,
5kΩ
1
10
10 2
Frequency f (kHz)
10 3
RL
4mAp - p
50Ω
– 20
–
IC = 10mA
Sig.IN
1kΩ
,,,,
100Ω
– 10
– 30
10 –1
4
+10V
,,
Voltage gain
AV (dB)
VCC
0
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