High Reliability Hermetic Infrared Emitting Diode OP235, OP236 (TX, TXV) Features: TO-46 hermetically sealed package with lens Twice the power output of GaAs at same drive current Characterized to define infrared energy along mechanical axis of device Narrow beam angle Processed to MIL-PRF-19500 Description: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon phototransistors. Devices have lens cans that provide an 18° beam angle between half power points, which facilitates the easy design of beam interrupt applications with the OP804 and OP805 series of high reliability phototransistors. TX and TXV devices are processed to OPTEK’s military screening program patterned after MIL-PRF-19500. After 100% screening, Group A and B are performed on every lot and a Group C test is performed every six months. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications: Non-contact reflective object sensor Assembly line automation Machine automation Machine safety End of travel sensor Door sensor Military and harsh environments Part Number OP235TX OP235TXV OP236TX OP236TXV LED Peak Wavelength Output Power (mW/cm2) Min / Max Total IF (mA) Beam Typ / Max Angle Lead Length 1.5 / NA 890 nm 50 / 100 18° 0.50" 3.5 / NA 1 2 [ MILLIMEDIMENSIONS ARE IN: LED Sensor 1 Anode Collector / Cathode 2 Cathode Emitter / Anode INCHES General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc Pin # TT Electronics | Optek Technology, Inc. 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 www.ttelectronics.com | [email protected] Issue A 11/2016 Page 1 High Reliability Hermetic Infrared Emitting Diode Electrical Specifications Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage Temperature Range -65o C to +150o C Operating Temperature Range -55o C to +125o C Reverse Voltage 2.0 V Forward DC Current 100 mA Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1) 200 mW(2) Power Dissipation Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL EE(APT) PARAMETER MIN TYP MAX 1.5 3.5 - - 1.1 1.3 0.9 - 2.0 2.2 1.8 V IF = 100 mA IF = 100 mA, TA = -55° C IF = 100 mA, TA = 100° C Apertured Radiant Incidence OP235 (TX, TXV) OP236 (TX, TXV) Forward Voltage VF UNITS TEST CONDITIONS mW/cm2 IF = 100 mA IR Reverse Current - - 100 µA VR= 2.0 V λP Wavelength at Peak Emission - 890 - nm IF = 100 mA β Spectral Bandwidth between Half Power Points - 50 - nm IF = 100 mA Emission Angle at Half Power Points - 18 - Degree IF = 100 mA θHP Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.00 mW/° C above 25° C. 3. EE(APT) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of 1.429” (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10° cone. EE(APT) is not necessarily uniform within the measured area. General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc TT Electronics | Optek Technology, Inc. 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 www.ttelectronics.com | [email protected] Issue A 11/2016 Page 2 High Reliability Hermetic Infrared Emitting Diode Forward Voltage vs Forward Current vs Forward VoltageTemperature vs Forward Current vs Temperature Optical Power vs Forward Current vs Optical Power vs Forward Current Temperature vs Temperature 1.8 2.5 Normalized at 50 mA and 20° C 1.4 1.2 -60°C -40°C -20°C 0°C 20°C 40°C 60°C 80°C 100°C 120°C 1.0 0.8 0 5 10 15 20 25 30 35 40 45 1.0 0.0 50 0 10 20 30 40 50 60 70 80 90 Forward Current IF (mA) Forward Current (mA) Distance vs Output Power vs Forward Distance vs Output Power vs Forward Current Current 18 16 Normalized Output Power 1.5 0.5 0.6 20 -60°C -40°C -20°C 0°C 20°C 40°C 60°C 80°C 100°C 120°C 2.0 Relative Output Power Typical Forward Voltage (V) 1.6 Normalized at 1.0" and 50 mA Forward Current 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA 120 mA 14 12 10 8 6 4 2 0 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' Distance (inches) General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc TT Electronics | Optek Technology, Inc. 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 www.ttelectronics.com | [email protected] Issue A 11/2016 Page 3 100