Product Bulletin OP268FPS November 2000 Plastic Point Source Infrared Emitting Diode Type OP268FPS Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • Point source irradiance pattern • Flat lensed for wide radiation angle • Easily stackable on 0.100”(2.54 mm) Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Forward Current (2 µs pulse width, 0.1% duty cycle). . . . . . . . . . . . . . . . . . 1.0 A Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . -40°C to +100°C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C (1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) hole centers Description The OP268FPS contains an 850 nm gallium aluminum arsenide infrared emitting diode molded in an “end-looking” miniature black package. This device has a wide radiation angle due to its flat emitting surface. The point source GaAIAs IRED emits photons from a 0.004” diameter area centered with the optical centerline. Small size and 0.100” (2.54 mm) lead spacing allow considerable design flexibility. NOTES: (1) RMA flux is recommended. Duration can be ex tended to 10 seconds maximum when flow soldering. Max imum 20 grams force may be applied to the leads when soldering. (2) Derate linearly 1.33 mW/°C above 25°C. (3) E e(APT) is a measurement of the average apertured radiant en ergy incident upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the “emitting surface”and 0.400” (10.16 mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. The stable VF vs. Temperature characteristic make them ideal for applications where voltage is limited (such as battery operation). The low tr /tf make them ideal for high speed operation. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 11 (972) 323-2200 Fax (972) 323-2396 Type OP268FPS Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Ee(APT) PARAMETER Apertured Irradiance MIN TYP MAX .10 UNITS 2 .90 mW/cm TEST CONDITIONS I F = 20 mA(3) VF Forward Voltage 1.80 V I F = 20 mA IR Reverse Current 20 µA VR = 2 V λp Wavelength at Peak Emission 850 nm I F = 20 mA B Spectral Bandwidth Between Half Power Points 50 nm ±50° Deg. θHP Emission Angle at Half Power I F = 20 mA I F = 20 mA tr Rise Time 10 ns I F(PK) = 20 mA tf Fall Time 10 ns PW = 10 µs, D.C. = 10% Optek re serves the right to make changes at any time in order to improve design and to supply the best product possi ble. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 12