OPTEK OP910W Pin silicon photodiode Datasheet

Product Bulletin OP910W
December 1998
PIN Silicon Photodiode
Type OP910W
Dimensions are in inches (millimeters).
Features
Absolute Maximum Ratings (TA = 25oC unless otherwise noted)
• Wide receiving angle
• Fast switching time
• Linear response vs. irradiance
• Enhanced temperature range
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +150o C
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +125o C
Lead Soldering Temperature [1/16 inch (1.6mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200oC(1)
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Description
The OP910W consists of a PIN silicon
photodiode mounted in a two-leaded
hermetic TO-46 package. The flat lens
has an acceptance half angle of ±40o.
Notes:
(1) RMA Flux is recommended. Duration can be extended to 10 sec. max. when flow
soldering.
(2) Light source is an unfiltered GaAs LED with a peak wavelength of 935 nm and a radiometric
intensity level which varies less than 10% over the entire lens surface of the photodiode
being tested.
(3) Junction temperature maintained at 25 o C.
(4) To calculate typical dark current in nA, use the formula ID=10(0.42 TA-1.5) where TA is
ambient temperature in o C.
(5) Derate linearly 2.5 mW/o C above 25o C.
Typical Performance Curves
Typical Spectral Response
Wavelength - nm
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
21
(972) 323-2200
Fax (972) 323-2396
Type OP910W
Electrical Characteristics (TA = 25o C unless otherwise noted)
SYMBOL
PARAMETER
IL
Light Current
ID
Dark Current
V(BR)R
Reverse Voltage Breakdown
MIN TYP MAX UNITS
1.7
2.4
1
10
100
TEST CONDITION
mA
VR = 20 V, Ee = .50 mW/cm2 note 2, 3
nA
VR = 20 V, Ee = 0.0
V
IR = 100 mA
tr
Rise Time
10
nS
VR = 20 V, RL = 50 OHMS
tf
Fall Time
10
nS
VR = 20 V, RL = 50 OHMS
∅
Half Angle
+/-40
degr.
CP
Capacitance
13
pF
VR = 0 V, F = 1 Mhz, Ee = 0
VF
Forward Voltage
V
IF = 100 mA
1.2
IF = Constant
Typical Performance Curves
Normalized Light Current vs.
Reverse Voltage
Total Capacitance vs.
Reverse Voltage
TA = 25o C
Ee = 0 mW/cm 2
f = 1 MHz
Normalized Light and Dark
Current vs. Ambient Temperature
VR = 5 V
λ = 935 nm
Normalized
to
TA = 25o C
Light Current
TA = 25o C
λ = 935 nm
Dark Current
VR - Reverse Voltage - V
Light Current vs. Irradiance
VR - Reverse Voltage - V
TA - Ambient Temperature - o C
Switching Time Test Circuit
Light Current vs.
Angular Displacement
q - Angular Displacement - Deg.
Ee - Irradiance - mW/cm 2
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
22
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