OPA8830Q Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs (N Type) Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage Min Typ Unit Condition V IF=10uA V IF=30mA V IR=10uA 12 mW IF=30mA 880 nm IF=50mA VF(1) 1.1 VF(2) 1.5 Reverse Voltage VR 4 Power PO 11 λP Wavelength Max 1.7 ∆λ 45 nm IF=50mA Rise Time Tr 15 ns Fall Time Tf 6.3 ns ※ Note : Power is measured by Sorter E/T system with bare chip. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 10.8mil x 10.8mil --------------------- 11.8mil x 11.8mil --------------------100um --------------------7mil --------------------6.3mil (d) (b) P Epi (e) (a) N Epi 4. Mechanical Data (a) Emission Area (c) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N Side Electrode