KODENSHI OPA9447 Infrared led chip Datasheet

Infrared LED Chip
OPA9447
GaAlAs/GaAs
1. Material
Substrate
Epitaxial Layer
GaAs (N Type)
GaAlAs(P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
Parameter Symbol
3. Electro-Optical
Characteristics Forward Voltage VF
Min
Reverse Voltage
VR
8
Power
PO
17
λP
Wavelength
Typ
Max
Unit
Condition
1.55
1.6
V
IF=100mA
V
IR=10uA
22
mW
IF=100mA
940
nm
IF=20mA
∆λ
45
nm
※ Note : Power is measured by Sorter E/T system with bare chip.
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
--------------------------- 11.0mil x
--------------------------- 12.0mil x
130um
--------------------------11mil
--------------------------6.7mil
---------------------------
(b)
(d)
(a)
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. +82 63 839 1111 Fax. +82 63 835 8259
P Epi
(e)
N Epi
(c)
www.auk.co.kr
11.0mil
12.0mil
Substrate
4. Mechanical Data (a) Emission Area
N Side Electrode
IF=20mA
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