OPTEK OPB821XV Hi- rel slot ted op ti cal switch Datasheet

Product Bulletin OPB821TX
September 1996
Hi-Rel Slotted Optical Switches
Types OPB821TX, OPB821TXV
24.0 (609.60)
#24 AWG
Features
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
• Non-contact switching
• Hermetically sealed components
• Components processed to Optek’s
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +125o C
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +150o C
Input Diode
Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1)
Output Phototransistor
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter-Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1)
screening program patterned after
MIL-PRF-19500 for TX and TXV
devices
Description
The OPB821TX or OPB821TXV consists
of a gallium aluminum arsenide LED and
a silicon phototransistor soldered into a
printed circuit board, then mounted in a
high temperature plastic housing on
opposite sides of an 0.080 inch (2.03
mm) wide slot. Lead wires are #24 AWG
polytetraflouroethylene (PTFE) insulated
conforming to MIL-W-16878.
Phototransistor switching takes place
whenever an opaque object passes
through the slot. For maximum output
signal, neither the LED or the
phototransistor in the OPB821TX or the
OPB821TXV is apertured.
The OPB821TX and OPB821TXV use
optoelectronic components that have
been processed and tested as either TX
or TXV components per MIL-PRF-19500.
Typical screening and lot acceptance
tests are provided on page 13-4.
Optek Technology, Inc.
Notes:
(1) Derate Linearly 1.00 mW/o C above 25o C.
(2) Methanol or isopropanol are recommended cleaning agents.
1215 W. Crosby Road
Carrollton, Texas 75006
13-38
(972) 323-2200
Fax (972) 323-2396
Types OPB821TX, OPB821TXV
Electrical Characteristics (TA = 25o C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max Units
Test Conditions
1.00
1.35
1.70
V
IF = 20.0 mA
1.20
1.55
1.90
V
IF = 20.0 mA, TA = -55o C
0.80
1.20
1.60
V
IF = 20.0 mA, TA = 100o C
0.1
100
µA
VR = 2.0 V
Input Diode
Forward Voltage(3)
VF
IR
Reverse Current
Output Phototransistor
V(BR)CEO
Collector-Emitter Breakdown Voltage
50
110
V
IC = 1.0 mA, IF = 0
V(BR)ECO
Emitter-Collector Breakdown Voltage
7.0
10.0
V
IE = 100 µA, IF = 0
Collector-Emitter Dark Current
0.2
100
nA
VCE = 10.0 V, IF = 0
10
100
µA
VCE = 10.0 V, IF = 0, TA = 100o C
800
µA
VCE = 10.0 V, IF = 20.0 mA
500
µA
VCE = 10.0 V, IF = 20.0 mA, TA = -55o C
500
µA
VCE = 10.0 V, IF = 20.0 mA, TA = 100o C
IC(off)
Coupled
On-State Collector Current(3)
IC(on)
Collector-Emitter Saturation Voltage
0.20
0.30
V
IC = 250 µA, IF = 20.0 mA
tr
Output Rise Time
12.0
20.0
µs
tf
Output Fall Time
12.0
20.0
µs
VCC = 10.0 V, IF = 20.0 mA,
RL = 1,000 Ω
VCE(SAT)
(3) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause
change in measurement results.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
13-39
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