isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2239 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=160V(Min) ·Good Linearity of hFE APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IE Emitter Current- Continuous -1.5 A PC Total Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2239 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ; IB= 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.5 V VBE(on) Base-Emitter On Voltage IC=0.5A ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 160V ; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB=5V; IC= 0 1.0 μA hFE DC Current Gain IC=0.1A ; VCE=5V COB Output Capacitance IE= 0; VCB=10V; ftest= 1MHz 25 pF Current-Gain—Bandwidth Product IC=0.1A;VCE=10V 100 MHz fT CONDITIONS B hFE Classifications O Y 70-140 120-240 isc Website：www.iscsemi.cn 2 MIN TYP. 70 MAX UNIT 240