isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2242 DESCRIPTION ·High Breakdown Voltage: V(BR)CBO= 300V(Min) ·High Current-Gain—Bandwidth Product: fT= 20MHz(Min)@IC= 20mA APPLICATIONS ·Power amplifier applications ·Color TV sound output applications ·Recommended for sound output stage in line operated TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 150 mA IB Base Current-Continuous 50 mA Collector Power Dissipation @ Ta=25℃ 1.5 B PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 25 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2242 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 50mA ; VCE= 10V 0.9 V ICBO Collector Cutoff Current VCB= 240V; IE=0 1.0 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 μA hFE DC Current Gain IC= 50mA ; VCE= 10V COB Output Capacitance IE= 0 ; VCB= 50V; ftest=1MHz Current-Gain—Bandwidth Product IC= 20mA ; VCE= 50V fT isc Website：www.iscsemi.cn CONDITIONS B 2 MIN TYP. MAX 300 V 40 170 5.5 20 UNIT 50 12 pF MHz