ETC 2SC2613K

2SC2613(K)
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
1. Base
2. Collector
(Flange)
3. Emitter
2 3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
5
A
Collector peak current
IC(peak)
10
A
Base current
IB
2.5
A
40
W
1
Collector power dissipation
PC*
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SC2613(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
VCEO(sus)
400
—
—
V
IC = 0.2 A, RBE = ∞, L = 100
mH
VCEX(sus)
400
—
—
V
IC = 5 A, IB1 = –IB2 = 1 A
VBE = –5 V, I = 180 µH,
Clamped
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
IE = 10 mA, IC = 0
Collector cutoff current
ICBO
—
—
100
µA
VCB = 400 V, IE = 0
ICEO
—
—
100
µA
VCE = 350 V, RBE = ∞
hFE1
15
—
—
DC current transfer ratio
VCE = 5 V, IC = 2.5 A*
hFE2
7
—
—
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.0
V
IC = 2.5 A, IB = 0.5 A*
1
Base to emitter saturation
voltage
VBE(sat)
—
—
1.5
V
IC = 2.5 A, IB = 0.5 A*
1
Turn on time
ton
—
—
1.0
µs
IC = 5 A, IB1 = –IB2 = 1 A,
VCC ≅ 150 V
Storage time
tstg
—
1.2
2.5
µs
Fall time
tf
—
—
1.0
µs
Note:
VCE = 5 V, IC = 5 A*
1
1
1. Pulse test.
See characteristic curves of 2SC2613.
Collector Power Dissipation
Pc (W)
Maximum Collector Dissipation Curve
60
40
20
0
2
50
100
Case Temperature Tc (°C)
150
2SC2613(K)
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
3
2SC2613(K)
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4
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