Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 Unit: mm 5.9±0.2 4.9±0.2 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7±0.1 +0.3 ● 0.7–0.2 ● 8.6±0.2 ■ Features (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45–0.1 0.45–0.1 1.27 1.27 1 2 3 3.2 ■ Absolute Maximum Ratings 13.5±0.5 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 1 µA Collector cutoff current ICBO VCB = 100V, IE = 0 Collector to emitter voltage VCEO IC = 0.1mA, IB = 0 150 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V Forward current transfer ratio hFE * VCE = 5V, IC = 10mA Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Noise voltage NV *h FE VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 130 330 1 160 150 V MHz 3 pF 300 mV Rank classification Rank R S hFE 130 ~ 220 185 ~ 330 1 2SC2632 Transistor PC — Ta IC — VBE VCE(sat) — IC 120 Collector to emitter saturation voltage VCE(sat) (V) 1.2 1.0 25˚C 100 Collector current IC (mA) 0.8 0.6 0.4 0.2 Ta=75˚C –25˚C 80 60 40 20 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 0.4 0.8 1.2 300 Transition frequency fT (MHz) Forward current transfer ratio hFE 500 400 Ta=75˚C 25˚C –25˚C 200 100 1 3 10 30 Collector current IC (mA) 2 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 1 100 250 200 150 100 50 0 –1 3 10 30 100 Collector current IC (mA) Cob — VCB VCB=10V f=100MHz Ta=25˚C VCE=10V 0.3 30 fT — I E 600 0 0.1 2.0 IC/IB=10 Base to emitter voltage VBE (V) hFE — IC 300 1.6 5 Collector output capacitance Cob (pF) Collector power dissipation PC (W) VCE=10V 100 IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 –3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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