Transistor 2SC2647 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 6.9±0.1 1.0 1.0 R 0.85 4.5±0.1 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 4.1±0.2 1.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 0.45±0.05 (Ta=25˚C) 3 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 0.55±0.1 ■ Absolute Maximum Ratings 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V * Forward current transfer ratio hFE VCB = 10V, IE = –1mA 70 Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz 150 Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz Reverse transfer impedance Zrb VCB = 10V, IE = –1mA *h FE 250 230 1.3 MHz 1.6 pF 60 Ω Rank classification Rank B C hFE 70 ~ 160 110 ~ 250 1 Transistor 2SC2647 PC — Ta IC — VCE 120 Ta=25˚C 200 100 8 60µA 6 40µA 4 20µA 2 60 80 100 120 140 160 Ambient temperature Ta (˚C) 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V 50 40 25˚C 30 –25˚C 20 10 0 0.4 0.8 1.2 12 1.6 2.0 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 1 3 10 30 Reverse transfer impedance Zrb (Ω) 400 VCB=10V 6V 200 100 –1 –3 –10 500 Ta=75˚C 400 25˚C 300 –25˚C 200 100 0 0.1 0.3 –30 Emitter current IE (mA) –100 70 60 50 40 VCB=6V 10V 20 10 0 – 0.1 – 0.3 –1 3 10 30 100 Cre — VCE f=2MHz Ta=25˚C 30 1 Collector current IC (mA) Zrb — IE 500 1.8 VCE=10V 100 80 Ta=25˚C 1.2 600 IC/IB=10 fT — IE 0 – 0.1 – 0.3 0.6 Base to emitter voltage VBE (V) Collector current IC (mA) 600 300 0 hFE — IC 100 Base to emitter voltage VBE (V) Transition frequency fT (MHz) 18 VCE(sat) — IC 60 0 40 Collector to emitter voltage VCE (V) IC — VBE Ta=75˚C 60 0 0 Forward current transfer ratio hFE 40 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 20 80 20 0 0 Collector current IC (mA) 100 80µA Base current IB (µA) 300 VCE=10V Ta=25˚C IB=100µA 10 400 0 2 IB — VBE 12 Collector current IC (mA) Collector power dissipation PC (mW) 500 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistor 2SC2647 Cob — VCB bie — gie 1.0 0.8 0.6 0.4 Reverse transfer susceptance bre (mS) 1.2 0 yie=gie+jbie VCE=10V Input susceptance bie (mS) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 1.4 100 10 6 25 4 10.7 IE=– 0.4mA –1mA –2mA –4mA –7mA 2 f=0.45MHz 0 1 3 10 30 0 100 Collector to base voltage VCB (V) 4 100 58 –1mA –4mA 25 58 100 –40 100 58 f=10.7MHz 25 –60 58 IE=–7mA –80 –100 1.0 0.8 58 25 40 60 –4mA –2.0 –2.5 –3.0 – 0.5 100 IE=–7mA –0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) 80 Forward transfer conductance 100 gfe (mS) –7mA –4mA –2mA –1mA IE=– 0.1mA 0.4 10.7 0.2 yoe=goe+jboe VCE=10V f=0.45MHz 0 20 –2mA – 0.4mA 0.6 yfe=gfe+jbfe VCE=10V –120 0 –1.5 100 10.7 –2mA 100 20 – 0.4mA –1mA 1.2 0.45 Output susceptance boe (mS) – 0.1mA –20 25 16 58 –1.0 boe — goe 0.45 10.7 – 0.4mA 12 Input conductance gie (mS) bfe — gfe 0 8 f=0.45MHz 10.7 25 yre=gre+jbre VCE=10V – 0.5 58 8 0.2 0 Forward transfer susceptance bfe (mS) bre — gre 12 1.6 0 0.2 0.4 0.6 0.8 1.0 Output conductance goe (mS) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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