SavantIC Semiconductor Product Specification 2SC2660 2SC2660A Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA1133/1133A ·High VCEO ·Large PC APPLICATIONS ·Power amplifier applications ·TV vertical deflection applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SC2660 Emitter-base voltage UNIT 200 V 150 Open base 2SC2660A VEBO VALUE V 180 Open collector 6 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC2660 2SC2660A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage Base-emitter on voltage VBE V(BR)CEO Collector-emitter breakdown voltage CONDITIONS MAX UNIT IC=0.5A ;IB=50m A 1.0 V IC=0.4A ; VCE=10V 1.0 V 2SC2660 MIN TYP. 150 IC=5mA ;IB=0 V 180 2SC2660A V(BR)CBO Collector-base breakdown voltage IC=0.5mA ;IE=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=0.5mA ;IC=0 6 V ICBO Collector cut-off current VCB=200V;IE=0 50 µA IEBO Emitter cut-off current VEB=4V; IC=0 50 µA hFE-1 DC current gain IC=0.15A ; VCE=10V 60 hFE-2 DC current gain IC=0.4A ; VCE=10V 50 hFE-1 classifications Q P 60-140 100-240 2 240 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3