isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2707 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 180V(Min.) ·High Power Dissipation ·Complement to Type 2SA1147 APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO n c . i m e VALUE UNIT 180 V 180 V Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2707 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 180 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 180 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A ICBO Collector Cutoff Current VCB= 180V; IE= 0 IEBO Emitter Cutoff Current DC Current Gain hFE-2 DC Current Gain Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn MIN TYP. n c . i m e s c s i . w w w hFE-1 fT CONDITIONS VEB= 5V; IC= 0 IC= 1A ; VCE= 5V 55 IC= 5A ; VCE= 5V 30 IC= 0.5A; VCE= 12V MAX UNIT 3.0 V 100 μA 100 μA 160 80 MHz