P35-4245-0 Marconi Optical Components GaAs MMIC DPDT Reflective Switch, DC - 6GHz Features · · · · Broadband performance Low insertion loss; 0.5dB typ at 2GHz Ultra low DC power consumption Fast switching speed; 3ns typical Description The P35-4245-0 is a high performance Gallium Arsenide double pole double throw broadband RF switch MMIC. It is suitable for use in broadband communications and instrumentation applications. A short circuit reflective termination is presented at the isolated output of the switch. The switch is controlled by the application of complimentary 0V/-5V or 0/8V signals to the control lines in accordance with the truth table below. This die is fabricated using MOC's 0.5µm gate length MESFET process (S20) and is fully protected using Silicon Nitride passivation for excellent performance and reliability. This device is also available packaged in plastic SO14 package (see P35-4245-3). Electrical Performance Ambient temperature = 22±3°C, ZO = 50Ω, Control voltages = 0V/-5V unless otherwise stated Parameter Insertion Loss1 Isolation2 Input Return Loss3 Output Return Loss3 1dB power compression point4 Switching Speed Conditions Min Typ Max Units DC - 3GHz 3 - 6GHz DC - 3GHz 3 - 6GHz DC - 3GHz 3 - 6GHz DC - 3GHz 3 - 6GHz 0/-5V Control; 50MHz 0/-5V Control; 0.5 - 4GHz 0/-8V Control; 50MHz 0/-8V Control; 0.5 - 4GHz 50% Control to 10%90%RF 40 30 20 15 20 12 - 0.5 0.8 45 35 25 18 22 14 19.5 25.5 21.5 28 3 0.6 0.9 - dB dB dB dB dB dB dB dB dBm dBm dBm dBm ns Notes 1. 2. 3. 4. Insertion loss refers to each pole of the switch. Isolation measured between RF IN & RF OUT (2 poles). Return Loss measured in low loss switch state. Input power at which insertion loss compresses by 1dB. Typical Performance at 22°C Insertion Loss Isolation Input Return Loss Output Return Loss Absolute Maximum Ratings Max control voltage Max I/P power Operating temperature Storage temperature -8V +30 dBm -60°C to +125°C -65°C to +150°C P35-4245-0 Marconi Optical Components Chip Outine Electrical Schematic Die size: 0.99 x 0.64mm Minimum Bond pad size: 90µm x 90µm Die thickness: 200µm Switching Schematic Switching Truth Table A B RF IN-RF1 RF IN-RF 2 RF3-RF OUT RF4-RF OUT 0V -5V -5V 0V Low Loss Isolated Isolated Low Loss Handling, Mounting and Bonding The back of the die is gold metallized and can be die-attached manually onto gold, eutectically with Au-Sn (80:20) or with low temperature conductive epoxy. The maximum allowable die temperature is 310°C for 2 minutes. Bonds should be made onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire. Bonding should be achieved with the die face at 225°C to 275°C with a heated thermosonic wedge (approx. 125°C) and a maximum force of 60 grams. Ball bonds may be used but care must be taken to ensure the ball size is compatible with the bonding pads shown. The length of the bond wires should be minimised to reduce parasitic inductance, particularly those to the RF and ground pads. Note that there is a choice of control pads (A & B) to aid circuit layout. Ordering Information: P35-4245-0 462/SM/00026/200 Iss 1/2 The data and product specifications are subject to change without notice. These devices should not be used for device qualification and production without prior notice. © Marconi Optical Components Ltd 2001 MOC, Caswell, Towcester, Northants, NN12 8EQ, Tel:+44 1327 356468 Fax +44 1327 356698 www.moc.marconi.com