P35-4250-3 Marconi Optical Components GaAs MMIC SP4T Reflective Switch, DC - 2GHz Features · · · · · Broadband performance Low insertion loss; 0.7dB typ at 1GHz Ultra low DC power consumption Fast switching speed; 3ns typical SO16 surface mount package Description The P35-4250-3 is a high performance Gallium Arsenide single pole four throw RF switch. It is suitable for use in broadband communications and instrumentation applications. A short circuit reflective termination is presented at the isolated outputs of the switch. The switch is controlled by the application of complimentary 0V/-5V or 0/-8V signals to the control lines in accordance with the truth table below. This die is fabricated using MOC's 0.5µm gate length MESFET process (S20) and is fully protected using Silicon Nitride passivation for excellent performance and reliability. This device is packaged in a low-cost surface-mount plastic package. Electrical Performance Ambient temperature = 22±3°C, ZO = 50Ω, Control voltages = 0V/-5V unless otherwise stated Parameter Insertion Loss1 Isolation1 Input Return Loss2 Output Return Loss2 1dB power compression point3 Switching Speed Conditions Min Typ Max Units DC - 1GHz 1 - 2GHz DC - 1GHz 1 - 2GHz DC - 1GHz 1 - 2GHz DC - 1GHz 1 - 2GHz 0/-5V Control; 50MHz 0/-5V Control; 2GHz 0/-8V Control; 50MHz 0/-8V Control; 2GHz 50% Control to 10%90%RF 26 16 21 14 21 14 - 0.7 0.9 28 20 28 25 28 22 19 22.5 21.5 30 3 0.9 1.1 - dB dB dB dB dB dB dB dB dBm dBm dBm dBm ns Notes 1. Insertion Loss and Isolation measured between RF input and any output. 2. Return Loss measured in low loss switch state. 3. Input power at which insertion loss compresses by 1dB. Typical Performance at 22°C Insertion Loss Isolation Input Return Loss Output Return Loss Absolute Maximum Ratings Max control voltage Max I/P power Operating temperature Storage temperature -8V +30 dBm -40°C to +125°C -65°C to +150°C P35-4250-3 Marconi Optical Components Package Outline Electrical Schematic Switching Truth Table Control Pad Voltage (V) A1 B1 A2 B2 A3 B3 A4 B4 Path From RF IN to RF1 RF2 RF3 RF4 -5 0 0 0 0 0 -5 0 -5 -5 0 -5 0 0 0 -5 -5 -5 -5 0 Low Loss Isolated Isolated Isolated Isolated Isolated Low Loss Isolated Isolated Isolated Isolated Low Loss 0 -5 -5 -5 0 -5 0 0 -5 0 -5 -5 Isolated Low Loss Isolated Isolated Handling, Mounting and Bonding Pin Details Pin Function 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A4 RF4 Ground RF IN Ground RF1 A1 B1 B2 A2 RF2 Ground RF3 A3 B3 B4 The back of the die is gold metallized and can be dieattached manually onto gold, eutectically with Au-Sn (80:20) or with low temperature conductive epoxy. The maximum allowable die temperature is 310°C for 2 minutes. Bonds should be made onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire. Bonding should be achieved with the die face at 225°C to 275°C with a heated thermosonic wedge (approx. 125°C) and a maximum force of 60 grams. Ball bonds may be used but care must be taken to ensure the ball size is compatible with the bonding pads shown. The length of the bond wires should be minimised to reduce parasitic inductance, particularly those to the RF and ground pads. Ordering Information: P35-4250-3 463/SM/00074/200 Iss 2/2 The data and product specifications are subject to change without notice. These devices should not be used for device qualification and production without prior notice. © Marconi Optical Components Ltd 2001 MOC, Caswell, Towcester, Northants, NN12 8EQ, Tel:+44 1327 356468 Fax +44 1327 356698 www.moc.marconi.com