2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier REJ03G0747-0200 (Previous ADE-208-746) Rev.2.00 Aug.10.2005 Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 2 1. Collector 2. Emitter 3. Base 4. Emitter 3 1 4 Note: Marking is “ZS-”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 7 Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 50 150 150 –55 to +150 Unit V V V mA mW °C °C 2SC5545 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob Min 15 — — — 80 — Typ — — — — 120 0.69 Max — 1 1 10 160 1.1 Unit V µA mA µA Gain bandwidth product Power gain fT PG 10 14 12.6 16 — — GHz dB Noise figure NF — 1.1 2.0 dB Rev.2.00 Aug 10, 2005 page 2 of 7 pF Test Conditions IC = 10µA , IE = 0 VCB = 12V , IE = 0 VCE = 6V , RBE = ∞ VEB = 1.5V , IC = 0 VCE = 3V , IC = 20mA VCB = 3V , IE = 0 f = 1MHz VCE = 3V , IC = 20mA VCE = 3V, IC = 20mA f = 900MHz VCE = 3V, IC = 5mA f = 900MHz 2SC5545 Main Characteristics DC Current Transfer Ratio vs. Collector Current 200 hFE 200 DC Current Transfer Ratio Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 150 100 50 VCE = 3 V 100 0 0 50 100 150 Ambient Temperature 200 1 10 20 50 100 IC (mA) (GHz) Gain Bandwidth Product vs. Collector Current IE = 0 f = 1MHz 20 VCE = 3 V 16 1.2 0.8 0.4 0 0.1 0.2 0.5 1 2 5 Collector to Base Voltage 10 Gain Bandwidth Product Collector Output Capacitance fT (pF) Cob 1.6 5 Collector Current Ta (°C) Collector Output Capacitance vs. Collector to Base Voltage 2.0 2 12 8 4 0 1 2 5 10 Collector Current VCB (V) 20 50 100 IC (mA) Noise Figure vs. Collector Current Power Gain vs. Collector Current 20 5 NF (dB) 12 Noise Figure Power Gain PG (dB) VCE = 3 V 16 8 4 VCE = 3 V f = 900MHz 4 3 2 1 f = 900MHz 0 1 0 2 5 10 Collector Current Rev.2.00 Aug 10, 2005 page 3 of 7 20 50 IC (mA) 100 1 2 5 10 Collector Current 20 50 IC (mA) 100 2SC5545 S 21 Parameter vs. Collector Current S 21 parameter |S 21 | 2 (dB) 20 VCE = 3 V f = 1GHz 16 12 8 4 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 7 100 2SC5545 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 10 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –60° –120° –1.5 –90° Condition : V CE = 3 V , I C = 20 mA Condition : V CE = 3 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.04 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition : V CE = 3 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) Rev.2.00 Aug 10, 2005 page 5 of 7 –2 –.6 –.8 –1 –1.5 Condition : V CE = 3 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) 2SC5545 Sparameter (VCE = 3V, IC = 20mA, Zo = 50Ω) S11 S21 S12 S22 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 MAG 0.567 0.539 0.528 0.525 0.518 0.526 0.526 0.528 0.532 0.535 0.536 0.549 0.546 0.547 0.552 0.562 ANG –60.8 –102.7 –128.1 –143.2 –153.6 –161.2 –167.9 –172.8 –178.3 178.2 174.2 170.6 167.6 165.4 162.4 159.4 MAG 34.04 24.61 18.16 14.26 11.65 9.82 8.48 7.46 6.63 6.00 5.48 5.04 4.67 4.34 4.09 3.82 ANG 146.8 125.5 113.2 105.5 100.2 96.4 92.9 90.0 87.4 85.1 82.9 81.0 79.1 77.4 75.7 74.0 MAG 0.0207 0.0329 0.0399 0.0447 0.0495 0.0545 0.0594 0.0639 0.0698 0.0741 0.0801 0.0851 0.0901 0.0961 0.102 0.106 ANG 67.3 54.3 50.6 50.3 51.6 53.3 54.8 56.1 57.7 58.7 59.5 60.6 60.9 61.5 62.1 62.3 MAG 0.817 0.605 0.463 0.379 0.327 0.293 0.269 0.253 0.242 0.235 0.229 0.225 0.223 0.222 0.222 0.223 ANG –37.3 –63.5 –80.5 –92.4 –101.8 –109.6 –116.2 –121.9 –127.0 –131.2 –135.1 –139.1 –142.0 –144.7 –147.2 –149.7 1700 1800 1900 2000 0.561 0.563 0.573 0.577 157.3 154.8 152.5 150.0 3.62 3.43 3.26 3.13 72.5 70.7 69.2 67.8 0.113 0.118 0.124 0.130 62.5 62.9 62.3 63.0 0.224 0.227 0.229 0.232 –152.3 –154.3 –155.8 –157.6 Rev.2.00 Aug 10, 2005 page 6 of 7 2SC5545 Package Dimensions JEITA Package Code RENESAS Code SC-61AA Package Name PLSP0004ZA-A MASS[Typ.] MPAK-4 / MPAK-4V D 0.013g A e e2 b1 Q c B B E HE Reference Symbol L A LP L1 A A3 x M S b A e2 A2 e I1 A b5 S b b2 e1 A1 y S b1 b3 c1 c c1 I1 c b4 A-A Section B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 I1 Q Ordering Information Part Name 2SC5545ZS-TL-E Quantity 3000 Rev.2.00 Aug 10, 2005 page 7 of 7 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Dimension in Millimeters Min 1.0 0 1.0 0.35 0.55 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.62 0.4 0.6 0.13 0.11 1.5 0.95 0.85 2.8 Max 1.3 0.1 1.2 0.5 0.7 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.05 0.55 0.75 1.95 1.05 0.3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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