RENESAS 2SC5773

2SC5773
Silicon NPN Epitaxial
UHF / VHF wide band amplifier
REJ03G0756-0300
Rev.3.00
May 09, 2006
Features
• High gain bandwidth product
fT = 10.8 GHz typ.
• High power gain and low noise figure ;
PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
1. Emitter
2. Base
3. Collector
3
1
2
Note: Marking is “JR-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
* When using aluminum ceramic board (25 x 60 x 0.7 mm)
Ratings
15
6
1.5
80
700*
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
This data sheet contains tentative specification for new product development. It may partially be subject to change
without notice.
Rev.3.00 May 09, 2006 page 1 of 10
2SC5773
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Symbol
V(BR)CBO
ICBO
ICEO
IEBO
hFE
Cob
Min
15
—
—
—
80
—
Typ
—
—
—
—
120
1.25
Max
—
1
1
10
160
1.8
Unit
V
µA
mA
µA
pF
VCB = 5 V, IE = 0
f = 1 MHz
Cre
—
0.98
—
pF
VCB = 5 V, IE = 0
f = 1 MHz
fT
8
10.8
—
GHz
VCE = 5 V, IC = 50 mA
f = 1 GHz
|S21|2
—
11
—
dB
VCE = 5 V, IC = 50 mA
f = 1 GHz
Power gain
PG
9
11.9
—
dB
VCE = 5 V, IC = 50 mA
f = 900 MHz
Noise figure
NF
—
1.1
1.9
dB
VCE = 5 V, IC = 5 mA
f = 900 MHz
Reverse transfer capacitance
Gain bandwidth product
S21 parameter
Rev.3.00 May 09, 2006 page 2 of 10
Test Conditions
IC = 10 µA, IE = 0
VCB = 12 V, IE = 0
VCE = 6 V, RBE = ∞
VEB = 1.5 V, IC = 0
VCE = 5 V, IC = 50 mA
2SC5773
Main Characteristics
DC Current Transfet Ratio vs.
Collector Current
800
hFE
When using aluminum ceramic board
S = 25 mm X 60 mm, t = 0.7 mm
DC Current Transfer Ratio
Collector Power Dissipation
Pc (mW)
Collector Power Dissipation Curve
600
400
200
200
VCE = 5 V
3V
100
0
50
0
100
150
Ambient Temperature
200
1
Ta (°C)
(GHz)
fT
3.2
2.4
1.6
0.8
1
2
5
Collector to Base Voltage
VCB
10
Gain Bandwidth Prodfuct
(pF)
Cob
Collector Output Capacitance
IE = 0
f = 1 MHz
0.5
(mA)
3V
8
4
0
1
2
5
10
20
IC
50
100
(mA)
Noise Figure vs. Collector Current
5
f = 900 MHz
NF (dB)
(dB)
PG
VCE = 5 V
Noise Figure
Power Gain
100
VCE = 5 V
12
Collector Current
f = 900 MHz
3V
8
4
0
1
IC
50
16
(V)
20
12
20
20
Power Gain vs. Collector Current
16
10
Gain Bandwidth Product vs.
Collector Current
4.0
0.2
5
Collector Current
Collector Output Capacitance vs.
Collector to Base Voltage
0
0.1
2
4
3
VCE = 3 V
2
5V
1
0
2
5
10
Collector Current
Rev.3.00 May 09, 2006 page 3 of 10
20
IC
50
(mA)
100
1
2
5
10
Collector Current
20
IC
50
(mA)
100
2SC5773
S21 Parameter vs. Collector Current
20
S21 Parameter
|S21|2 (dB)
f = 1 GHz
16
VCE = 5 V
12
3V
8
4
0
1
2
5
10
Collector Current
Rev.3.00 May 09, 2006 page 4 of 10
20
50
IC (mA)
100
2SC5773
S21 Paramter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90°
1.5
Scale: 8 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–60°
–120°
–1.5
–90°
Condition: VCE = 3 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz Step)
( IC = 50 mA)
( IC = 30 mA)
( IC = 10 mA)
Condition: VCE = 3 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz Step)
( IC = 50 mA)
( IC = 30 mA)
( IC = 10 mA)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
Scale: 0.08 / div.
.8
60°
120°
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: VCE = 3 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz Step)
( IC = 50 mA)
( IC = 30 mA)
( IC = 10 mA)
Rev.3.00 May 09, 2006 page 5 of 10
–2
–.6
–.8
–1
–1.5
Condition: VCE = 3 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz Step)
( IC = 50 mA)
( IC = 30 mA)
( IC = 10 mA)
2SC5773
S21 Paramter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90°
1.5
Scale: 8 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–90°
Condition: VCE = 5 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz Step)
( IC = 50 mA)
( IC = 30 mA)
Condition: VCE = 5 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz Step)
( IC = 50 mA)
( IC = 30 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.08 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: VCE = 5 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz Step)
( IC = 50 mA)
( IC = 30 mA)
Rev.3.00 May 09, 2006 page 6 of 10
–2
–.6
–.8
–1
–1.5
Condition: VCE = 5 V, Zo = 50 Ω
100 to 2000 MHz (100 MHz Step)
( IC = 50 mA)
( IC = 30 mA)
2SC5773
Sparameter
(VCE = 3 V, IC = 10 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
MAG
0.643
0.532
0.496
0.475
0.471
0.468
0.468
0.464
0.467
0.465
0.468
0.477
0.478
0.479
0.483
0.486
ANG
-68.8
-112.2
-135.9
-150.6
-160.9
-168.0
-174.7
179.4
174.7
169.9
166.5
162.7
159.2
155.7
152.8
149.7
MAG
21.09
13.52
9.42
7.19
5.80
4.88
4.21
3.71
3.30
3.00
2.75
2.55
2.38
2.23
2.10
1.98
ANG
137.1
114.6
103.2
96.2
91.1
87.0
83.2
79.9
77.0
74.1
71.6
69.1
66.6
64.4
62.2
59.9
MAG
0.042
0.061
0.073
0.085
0.097
0.109
0.121
0.134
0.148
0.161
0.174
0.188
0.201
0.215
0.227
0.242
ANG
60.3
51.4
51.7
53.9
56.1
57.8
59.5
60.8
61.7
62.2
62.5
62.9
62.7
62.7
62.8
62.4
MAG
0.740
0.487
0.355
0.288
0.250
0.225
0.210
0.199
0.193
0.187
0.185
0.184
0.182
0.182
0.183
0.185
ANG
-47.5
-74.5
-90.4
-100.9
-109.7
-116.6
-122.2
-126.8
-131.1
-134.2
-137.4
-139.9
-142.2
-144.0
-146.1
-147.5
1700
1800
1900
2000
0.490
0.489
0.492
0.497
146.0
143.6
140.7
137.9
1.89
1.80
1.73
1.67
58.0
55.9
54.1
51.9
0.255
0.268
0.281
0.292
62.2
61.8
61.3
60.8
0.186
0.187
0.190
0.192
-149.0
-150.8
-152.1
-152.9
(VCE = 3 V, IC = 30 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz)
100
200
300
400
500
600
700
800
900
1000
MAG
0.449
0.445
0.449
0.456
0.454
0.451
0.455
0.458
0.462
0.455
ANG
-112.7
-148.0
-163.2
-171.8
-178.9
176.4
171.6
167.4
163.5
160.3
MAG
29.89
16.17
10.77
8.08
6.47
5.42
4.65
4.09
3.65
3.32
ANG
120.9
103.3
95.7
90.8
87.2
83.9
81.1
78.4
76.0
73.5
MAG
0.029
0.044
0.059
0.075
0.092
0.108
0.124
0.141
0.158
0.173
ANG
59.9
62.6
66.4
68.8
70.0
71.0
71.0
70.9
70.6
70.1
MAG
0.534
0.336
0.269
0.242
0.230
0.223
0.219
0.216
0.216
0.214
ANG
-74.7
-106.4
-124.9
-136.3
-144.6
-150.6
-155.1
-158.9
-161.6
-164.2
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.463
0.469
0.465
0.471
0.477
0.477
0.473
0.483
0.479
0.482
156.4
153.6
150.9
147.1
144.9
142.5
138.9
136.9
133.8
131.3
3.02
2.80
2.61
2.45
2.30
2.17
2.08
1.98
1.90
1.84
71.6
69.1
67.3
65.3
63.3
61.2
59.5
57.7
55.9
53.8
0.190
0.205
0.220
0.236
0.251
0.268
0.282
0.296
0.311
0.322
69.7
69.0
68.1
67.6
66.8
66.0
65.2
64.0
63.3
62.3
0.215
0.215
0.214
0.216
0.216
0.217
0.218
0.219
0.220
0.220
-166.5
-168.1
-170.0
-171.3
-172.5
-173.9
-174.8
-175.5
-176.5
-177.2
Rev.3.00 May 09, 2006 page 7 of 10
2SC5773
(VCE = 3 V, IC = 50 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
MAG
0.421
0.437
0.448
0.449
0.461
0.455
0.459
0.463
0.465
0.464
0.467
0.468
0.467
0.475
0.477
0.482
0.480
ANG
-130.8
-159.1
-169.5
-177.1
177.1
173.0
168.3
164.8
161.9
158.2
154.9
152.0
148.7
145.2
143.4
141.3
137.3
MAG
31.68
16.57
10.94
8.18
6.57
5.48
4.71
4.15
3.68
3.35
3.07
2.83
2.64
2.47
2.33
2.20
2.11
ANG
116.2
100.7
93.9
89.5
86.2
83.2
80.5
78.1
75.9
73.3
71.3
69.3
67.2
65.2
63.5
61.4
59.7
MAG
0.025
0.040
0.058
0.075
0.092
0.109
0.126
0.143
0.161
0.177
0.193
0.210
0.225
0.241
0.257
0.273
0.288
ANG
62.9
67.3
71.0
72.9
73.4
73.7
73.5
73.0
72.6
71.9
70.8
70.2
69.0
68.4
67.5
66.5
65.6
MAG
0.468
0.308
0.261
0.243
0.236
0.232
0.230
0.229
0.229
0.228
0.229
0.229
0.229
0.230
0.230
0.231
0.232
ANG
-84.7
-117.4
-135.2
-145.5
-152.5
-158.0
-161.8
-164.9
-167.4
-169.6
-171.7
-173.2
-174.7
-175.7
-177.1
-178.2
-179.0
1800
1900
2000
0.485
0.481
0.484
135.5
132.8
129.6
2.01
1.92
1.85
57.8
56.1
54.4
0.303
0.318
0.330
64.6
63.7
62.6
0.232
0.234
0.232
-179.9
179.0
178.6
Rev.3.00 May 09, 2006 page 8 of 10
2SC5773
(VCE = 5 V, IC = 30 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
MAG
0.447
0.419
0.416
0.414
0.421
0.419
0.418
0.426
0.425
0.423
0.428
0.432
0.429
0.436
0.437
0.447
0.445
ANG
-102.8
-142.1
-158.2
-168.7
-176.4
178.3
173.3
168.4
165.9
161.7
157.9
154.3
151.6
148.6
145.5
143.3
140.2
MAG
31.04
17.16
11.49
8.63
6.92
5.79
4.98
4.37
3.89
3.53
3.23
2.98
2.79
2.60
2.45
2.31
2.20
ANG
123.3
105.0
96.8
91.7
88.0
84.8
81.8
79.3
76.6
74.2
72.1
70.0
67.9
66.1
64.1
61.9
60.1
MAG
0.028
0.042
0.057
0.072
0.088
0.103
0.119
0.135
0.151
0.166
0.181
0.196
0.211
0.226
0.240
0.256
0.270
ANG
60.6
62.5
66.4
69.2
70.2
70.9
70.9
70.9
70.7
70.5
69.8
69.3
68.4
67.9
67.0
66.3
65.8
MAG
0.552
0.333
0.250
0.214
0.196
0.185
0.179
0.174
0.173
0.171
0.171
0.171
0.170
0.171
0.172
0.173
0.174
ANG
-66.3
-94.7
-112.0
-123.3
-132.1
-138.6
-144.0
-148.5
-151.8
-154.9
-157.2
-159.2
-161.5
-162.7
-163.9
-165.5
-166.5
1800
1900
2000
0.450
0.447
0.453
137.2
134.6
131.5
2.09
2.01
1.94
58.5
56.3
54.7
0.283
0.298
0.309
64.5
63.8
62.8
0.174
0.177
0.177
-167.8
-168.6
-169.4
(VCE = 5 V, IC = 50 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
MAG
0.402
0.406
0.414
0.413
0.417
0.419
0.419
0.423
0.427
0.423
0.428
0.428
ANG
-120.1
-152.6
-166.1
-174.2
179.5
174.7
169.9
166.2
161.6
158.2
154.7
152.5
MAG
33.23
17.68
11.71
8.78
7.03
5.88
5.05
4.44
3.94
3.58
3.27
3.02
ANG
118.6
102.1
95.0
90.4
87.0
84.0
81.3
78.7
76.4
73.9
71.9
70.0
MAG
0.024
0.039
0.055
0.072
0.088
0.104
0.121
0.137
0.154
0.169
0.185
0.201
ANG
63.7
67.2
70.7
72.4
73.0
73.5
73.2
72.7
72.3
71.6
70.9
70.4
MAG
0.485
0.296
0.233
0.207
0.195
0.188
0.185
0.182
0.182
0.180
0.181
0.181
ANG
-74.9
-104.7
-122.4
-133.6
-141.7
-147.9
-152.6
-156.4
-159.3
-161.8
-164.2
-165.9
1300
1400
1500
1600
1700
1800
1900
2000
0.435
0.434
0.443
0.447
0.444
0.451
0.445
0.454
148.6
145.2
143.0
140.4
137.3
134.1
132.1
129.3
2.82
2.65
2.48
2.35
2.24
2.13
2.05
1.96
67.8
65.9
64.2
62.1
60.4
58.6
56.7
54.9
0.216
0.231
0.246
0.262
0.275
0.290
0.304
0.316
69.3
68.8
67.8
66.9
65.9
64.9
64.2
63.0
0.181
0.182
0.182
0.184
0.185
0.186
0.187
0.187
-167.5
-168.9
-170.1
-171.4
-172.2
-173.5
-174.2
-174.7
Rev.3.00 May 09, 2006 page 9 of 10
2SC5773
Package Dimensions
JEITA Package Code
SC-59A
Package Name
MPAK
RENESAS Code
PLSP0003ZB-A
D
Previous Code
MPAK(T) / MPAK(T)V
A
Q
e
E
c
HE
L
A
MASS[Typ.]
0.011g
LP
L1
Reference Dimension in Millimeters
Symbol
Min Nom Max
A3
A
x M S
b
A
e
A2
A
e1
A1
S
b
b1
c1
I1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
c
c1
D
E
e
HE
L
L1
LP
x
b2
e1
I1
Q
1.0
0
1.0
0.35
0.1
2.7
1.35
2.2
0.35
0.15
0.25
1.1
0.25
0.42
0.4
0.13
0.11
1.5
0.95
2.8
1.3
0.1
1.2
0.5
0.15
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.55
1.95
1.05
0.3
Ordering Information
Part Name
2SC5773JR-TL-E
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 May 09, 2006 page 10 of 10
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
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