PHILIPS PBSS4112PANP

PBSS4112PANP
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
29 November 2012
Product data sheet
1. Product profile
1.1 General description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.
1.2 Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High efficiency due to less heat generation
• AEC-Q101 qualified
1.3 Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
120
V
-
-
1
A
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
open base
IC
collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
1.5
A
collector-emitter
saturation resistance
IC = 500 mA; IB = 50 mA; pulsed;
-
-
240
mΩ
TR1 (NPN)
RCEsat
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
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PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter
saturation resistance
IC = -500 mA; IB = -50 mA; pulsed;
-
-
440
mΩ
TR2 (PNP)
RCEsat
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
E1
emitter TR1
2
B1
base TR1
3
C2
collector TR2
4
E2
emitter TR2
5
B2
base TR2
6
C1
collector TR1
7
C1
collector TR1
8
C2
collector TR2
Simplified outline
6
5
7
1
Graphic symbol
4
8
2
3
Transparent top view
C1
B2
E2
TR2
TR1
E1
B1
C2
sym139
DFN2020-6 (SOT1118)
3. Ordering information
Table 3.
Ordering information
Type number
Package
PBSS4112PANP
Name
Description
Version
DFN2020-6
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
SOT1118
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS4112PANP
2T
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
open emitter
-
120
V
open base
-
120
V
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
VCEO
collector-emitter voltage
PBSS4112PANP
Product data sheet
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2 / 21
PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
Min
Max
Unit
VEBO
emitter-base voltage
open collector
-
7
V
IC
collector current
-
1
A
ICM
peak collector current
-
1.5
A
IB
base current
-
0.3
A
IBM
peak base current
single pulse; tp ≤ 1 ms
-
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
370
mW
[2]
-
570
mW
[3]
-
530
mW
[4]
-
700
mW
[5]
-
450
mW
[6]
-
760
mW
[7]
-
700
mW
[8]
-
1450
mW
[1]
-
510
mW
[2]
-
780
mW
[3]
-
730
mW
[4]
-
960
mW
[5]
-
620
mW
[6]
-
1040
mW
[7]
-
960
mW
[8]
-
2000
mW
single pulse; tp ≤ 1 ms
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
PBSS4112PANP
Product data sheet
Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
2
collector 1 cm .
Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
2
Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm .
Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
2
collector 1 cm .
Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
2
Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm .
All information provided in this document is subject to legal disclaimers.
29 November 2012
© NXP B.V. 2012. All rights reserved
3 / 21
PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
1.5
006aad165
(1)
Ptot
(W)
1.0
(2)
(3) (4)
(5)
0.5 (6)
(7)
(8)
0
-75
-25
25
75
(1) 4-layer PCB 70 µm, mounting pad for collector 1 cm
(2) FR4 PCB 70 µm, mounting pad for collector 1 cm
(3) 4-layer PCB 70 µm, standard footprint
Fig. 1.
2
2
(4) 4-layer PCB 35 µm, mounting pad for collector 1 cm
(5) FR4 PCB 35 µm, mounting pad for collector 1 cm
(6) 4-layer PCB 35 µm, standard footprint
(7) FR4 PCB 70 µm, standard footprint
(8) FR4 PCB 35 µm, standard footprint
125
175
Tamb (°C)
2
2
Per transistor: power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
-
338
K/W
[2]
-
-
219
K/W
[3]
-
-
236
K/W
[4]
-
-
179
K/W
[5]
-
-
278
K/W
[6]
-
-
164
K/W
[7]
-
-
179
K/W
[8]
-
-
86
K/W
-
-
30
K/W
Per transistor
Rth(j-a)
Rth(j-sp)
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
PBSS4112PANP
Product data sheet
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4 / 21
PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
-
245
K/W
[2]
-
-
160
K/W
[3]
-
-
171
K/W
[4]
-
-
130
K/W
[5]
-
-
202
K/W
[6]
-
-
120
K/W
[7]
-
-
130
K/W
[8]
-
-
63
K/W
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
in free air
Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
2
collector 1 cm .
Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
2
collector 1 cm .
Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
2
Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm .
006aad166
103
Zth(j-a)
(K/W)
2
Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm .
Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
duty cycle = 1
0.75
102
0.33
0.5
0.2
0.1
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB 35 µm, standard footprint
Fig. 2.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4112PANP
Product data sheet
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5 / 21
PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
006aad167
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.33
0.5
0.2
0.1
0.05
10
0.02
1
10-5
0.01
0
10-4
10-3
10-2
10-1
FR4 PCB 35 µm, mounting pad for collector 1 cm
Fig. 3.
1
10
102
tp (s)
103
2
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aad168
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.33
0.5
0.2
0.1
0.05
10
0.02
1
10-5
0.01
0
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
4-layer PCB 35 µm, standard footprint
Fig. 4.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4112PANP
Product data sheet
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29 November 2012
© NXP B.V. 2012. All rights reserved
6 / 21
PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
006aad169
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.33
0.5
0.2
0.1
0.05
10
0.02
0.01
1
10-5
0
10-4
10-3
10-2
10-1
4-layer PCB 35 µm, mounting pad for collector 1 cm
Fig. 5.
1
10
102
tp (s)
103
2
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac610
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.33
0.5
0.2
0.1
0.05
10
0.02
0
1
10- 5
0.01
10- 4
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB 70 µm, standard footprint
Fig. 6.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4112PANP
Product data sheet
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29 November 2012
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7 / 21
PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
006aac611
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0
1
5
10
0.01
10- 4
10- 3
10- 2
10- 1
FR4 PCB 70 µm, mounting pad for collector 1 cm
Fig. 7.
1
10
102
tp (s)
103
2
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aad170
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
1
10-5
0
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
4-layer PCB 70 µm, standard footprint
Fig. 8.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4112PANP
Product data sheet
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PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
102
006aad171
duty cycle = 1
0.75
0.5
Zth(j-a)
(K/W)
0.33
0.2
10
0.1
0.05
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
4-layer PCB 70 µm, mounting pad for collector 1 cm
Fig. 9.
1
102
10
tp (s)
103
2
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
collector-base cut-off
current
VCB = 96 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
VCB = 96 V; IE = 0 A; Tj = 150 °C
-
-
50
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
hFE
DC current gain
VCE = 2 V; IC = 100 mA; pulsed;
240
375
-
60
100
-
30
45
-
IC = 500 mA; IB = 50 mA; Tamb = 25 °C
-
90
120
mV
IC = 1 A; IB = 50 mA; pulsed;
-
205
260
mV
-
170
220
mV
-
-
240
mΩ
TR1 (NPN)
ICBO
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = 2 V; IC = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 1 A; IB = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
RCEsat
collector-emitter
saturation resistance
PBSS4112PANP
Product data sheet
IC = 500 mA; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
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PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
VBEsat
base-emitter saturation IC = 500 mA; IB = 50 mA; Tamb = 25 °C
voltage
IC = 1 A; IB = 50 mA; pulsed;
Min
Typ
Max
Unit
-
-
1
V
-
-
1.1
V
-
-
1.1
V
-
-
0.9
V
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 1 A; IB = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 0.5 A; pulsed;
delay time
VCC = 10 V; IC = 500 mA; IBon = 25 mA;
-
20
-
ns
tr
rise time
IBoff = -25 mA; Tamb = 25 °C
-
440
-
ns
ton
turn-on time
-
460
-
ns
ts
storage time
-
615
-
ns
tf
fall time
-
390
-
ns
toff
turn-off time
-
1005
-
ns
fT
transition frequency
60
120
-
MHz
-
4.5
7
pF
td
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = 10 V; IC = 50 mA; f = 100 MHz;
Tamb = 25 °C
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
TR2 (PNP)
collector-base cut-off
current
VCB = -96 V; IE = 0 A
-
-
-100
nA
VCB = -96 V; IE = 0 A; Tj = 150 °C
-
-
-50
µA
IEBO
emitter-base cut-off
current
VEB = -5 V; IC = 0 A
-
-
-100
nA
hFE
DC current gain
VCE = -2 V; IC = -100 mA; pulsed;
190
305
-
50
85
-
15
25
-
-
-150
-220
mV
-
-335
-480
mV
-
-
440
mΩ
-
-
-1
V
-
-
-1.1
V
ICBO
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = -2 V; IC = -500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = -2 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
RCEsat
VBEsat
collector-emitter
saturation resistance
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
base-emitter saturation IC = -500 mA; IB = -50 mA;
voltage
Tamb = 25 °C
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
PBSS4112PANP
Product data sheet
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29 November 2012
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10 / 21
PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -0.5 A; pulsed;
-
-
-0.9
V
td
delay time
VCC = -10 V; IC = -500 mA;
-
15
-
ns
tr
rise time
IBon = -25 mA; IBoff = 25 mA;
-
245
-
ns
ton
turn-on time
-
260
-
ns
ts
storage time
-
290
-
ns
tf
fall time
-
270
-
ns
toff
turn-off time
-
560
-
ns
fT
transition frequency
50
100
-
MHz
-
9.5
13
pF
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Tamb = 25 °C
VCE = -10 V; IC = -50 mA; f = 100 MHz;
Tamb = 25 °C
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
aaa-005713
600
(1)
hFE
aaa-005714
1.5
IB = 50 mA
45
IC
(A)
40
35
30
25
(2)
400
20
1.0
15
10
5
(3)
200
0
10-1
0.5
1
10
102
0.0
103
104
IC (mA)
VCE = 2 V
0
1
2
3
4
VCE (V)
5
Tamb = 25 °C
(1) Tamb = 100 °C
Fig. 11. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 10. TR1 (NPN): DC current gain as a function of
collector current; typical values
PBSS4112PANP
Product data sheet
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29 November 2012
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11 / 21
PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
aaa-005715
1.2
aaa-005716
1.2
VBEsat
(V)
VBE
(V)
1.0
(1)
0.8
(1)
0.8
(2)
(2)
0.6
0.4
(3)
(3)
0.4
0.0
10-1
1
10
102
0.2
10-1
103
104
IC (mA)
1
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb= 100 °C
Fig. 12. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
VCEsat
(V)
103
104
IC (mA)
Fig. 13. TR1 (NPN): Base-emitter saturation voltage as a
function of collector current; typical values
aaa-005717
1
102
10
aaa-005718
1
VCEsat
(V)
10-1
(1)
10-1
(1)
(2)
(2)
(3)
(3)
10-2
10-1
1
10
102
103
104
IC (mA)
10-2
10-1
1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
10
102
103
104
IC (mA)
Fig. 14. TR1 (NPN): Collector-emitter saturation voltage Fig. 15. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
as a function of collector current; typical values
PBSS4112PANP
Product data sheet
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29 November 2012
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12 / 21
PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
aaa-005719
103
aaa-005720
103
RCEsat
(Ω)
RCEsat
(Ω)
102
102
10
10
(1)
(1)
(2)
(3)
1
1
(2)
(3)
10-1
10-1
1
10
102
10-1
10-1
103
104
IC (mA)
1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig. 16. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
aaa-005721
600
hFE
400
102
aaa-005722
-81
-72
-63
IC
(A)
IB = -90 mA
-54
-1.0
(2)
103
104
IC (mA)
Fig. 17. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
-1.5
(1)
10
-45
-36
-27
-18
-9
(3)
200
0
-10-1
-1
-10
-0.5
-102
0.0
-103
-104
IC (mA)
VCE = −2 V
0
-1
-2
-3
-4
VCE (V)
-5
Tamb = 25 °C
(1) Tamb = 100 °C
Fig. 19. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 18. TR2 (PNP): DC current gain as a function of
collector current; typical values
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PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
aaa-005723
-1.2
aaa-005724
-1.2
VBEsat
(V)
VBE
(V)
-1.0
(1)
-0.8
(1)
-0.8
(2)
(2)
(3)
-0.6
-0.4
(3)
-0.4
0.0
-10-1
-1
-102
-10
-0.2
-10-1
-103
-104
IC (mA)
-1
-10
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig. 20. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
aaa-005725
-1
-102
-103
-104
IC (mA)
Fig. 21. TR2 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
aaa-005726
-1
VCEsat
(V)
VCEsat
(V)
-10-1
-10-1
(1)
(2)
(1)
(2)
(3)
(3)
-10-2
-10-1
-1
-10
-102
IC (mA)
-103
-10-2
-10-1
-1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
-10
-102
-103
-104
IC (mA)
Fig. 22. TR2 (PNP): Collector-emitter saturation voltage Fig. 23. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
as a function of collector current; typical values
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PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
aaa-005727
103
aaa-005728
103
RCEsat
(Ω)
RCEsat
(Ω)
102
102
10
10
(1)
(1)
(2)
(3)
(2)
1
10-1
-10-1
1
-1
-10
-102
10-1
-10-1
-103
-104
IC (mA)
(3)
-1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB= 10
Fig. 24. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
PBSS4112PANP
Product data sheet
-10
-102
-103
-104
IC (mA)
Fig. 25. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
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PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
8. Test information
Fig. 26. TR1 (NPN): BISS transistor switching time definition
Fig. 27. TR1 (NPN): Test circuit for switching times
PBSS4112PANP
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NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Fig. 28. TR2 (PNP): BISS transistor switching time definition
Fig. 29. TR2 (PNP): Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
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120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
9. Package outline
2.1
1.9
0.65
max
1.1
0.9
0.77
0.57
(2×)
2.1
1.9
0.54
0.44
(2×)
0.04
max
3
4
1
6
0.65
(4×)
0.35
0.25
(6×)
0.3
0.2
Dimensions in mm
10-05-31
Fig. 30. Package outline DFN2020-6 (SOT1118)
10. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
0.875
solder paste
1.05 1.15
(2×) (2×)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
(6×)
0.72
(2×)
0.45
(6×)
0.82
(2×)
sot1118_fr
Fig. 31. Reflow soldering footprint for DFN2020-6 (SOT1118)
11. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS4112PANP v.1
20121129
Product data sheet
-
-
PBSS4112PANP
Product data sheet
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PBSS4112PANP
NXP Semiconductors
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PBSS4112PANP
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
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120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TOPTriac, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
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120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
13. Contents
1
1.1
1.2
1.3
1.4
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
2
Pinning information ............................................... 2
3
Ordering information ............................................. 2
4
Marking ................................................................... 2
5
Limiting values .......................................................2
6
Thermal characteristics .........................................4
7
Characteristics ....................................................... 9
8
8.1
Test information ................................................... 16
Quality information .........................................
9
Package outline ................................................... 18
10
Soldering .............................................................. 18
11
Revision history ................................................... 18
12
12.1
12.2
12.3
12.4
Legal information .................................................19
Data sheet status ............................................... 19
Definitions ...........................................................19
Disclaimers .........................................................19
Trademarks ........................................................ 20
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 November 2012
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