UTC-IC 2SD669_12

UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
1
1
SOT-89
SOT-223
„
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC
1
1
2SB649/A
TO-251
TO-252
1
1
TO-92NL
TO-92
1
TO-126
„
1
TO-126C
ORDERING INFORMATION
Ordering Number
Lead Free
2SD669xL-x-AA3-R
2SD669xL-x-AB3-R
2SD669xL-x-T60-K
2SD669xL-x-T6C-K
2SD669xL-x-T92-B
2SD669xL-x-T92-K
2SD669xL-x-T92-R
2SD669xL-x-T9N-B
2SD669xL-x-T9N-K
2SD669xL-x-TM3-T
2SD669xL-x-TN3-R
2SD669xL-x-TN3-T
Halogen Free
2SD669xG-x-AA3-R
2SD669xG-x-AB3-R
2SD669xG-x-T60-K
2SD669xG-x-T6C-K
2SD669xG-x-T92-B
2SD669xG-x-T92-K
2SD669xG-x-T92-R
2SD669xG-x-T9N-B
2SD669xG-x-T9N-K
2SD669xG-x-TM3-T
2SD669xG-x-TN3-R
2SD669xG-x-TN3-T
Package
SOT-223
SOT-89
TO-126
TO-126C
TO-92
TO-92
TO-92
TO-92NL
TO-92NL
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
B
C
E
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
Bulk
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tube
Tape Reel
Tube
(1) B: Tape Box, K: Bulk, R: Tape Reel
2SD669xL-x-AB3-R
(1)Packing Type
(2) AA3: SOT-223, AB3: SOT-89, T60: TO-126,
(2)Package Type
(2) T6C: TO-126C, TM3: TO-251, TN3: TO-252,
(3)Rank
(2) T92: TO-92, T9N: TO-92NL
(4)Lead Plating
(3) x: refer to Classification of hFE1
(5) Collector-Emitter Voltage
(4) G: Halogen Free, L: Lead Free
(5) A: 160V, Blank: 120V
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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2SD669/A
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
RATINGS
UNIT
180
V
2SD669
120
Collector-Emitter Voltage
VCEO
V
2SD669A
160
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1.5
A
Collector Peak Current
lC(PEAK)
3
A
SOT-223/ SOT-89
0.5
W
TO-126
1.3
W
TO-126C
1
W
Power Dissipation
PD
TO-92/TO-92NL
0.6
W
TO-251
1
W
TO-252
2
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
HERMAL DATA
Junction to Case
„
SYMBOL
VCBO
PARAMETER
SOT-89
SOT-223
TO-92/ TO-92NL
TO-126
TO-126C
TO-251/ TO-252
RATINGS
38
14
80
6.25
10
4.5
θJC
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown 2SD669
Voltage
2SD669A
Emitter to Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
Note: Pulse test.
„
SYMBOL
SYMBOL
TEST CONDITIONS
BVCBO IC=1mA, IE=0
BVCEO
IC=10mA, RBE=∞
BVEBO
ICBO
hFE1
hFE2
VCE(SAT)
VBE
fT
Cob
IE=1mA, IC=0
VCB=160V, IE=0
VCE=5V, IC=150mA (Note)
VCE=5V, IC=500mA (Note)
IC=600mA, IB=50mA (Note)
VCE=5V, IC=150mA (Note)
VCE=5V, IC=150mA (Note)
VCB=10V, IE=0, f=1MHz
MIN
180
120
160
5
TYP
MAX
UNIT
V
V
10
320
60
30
1
1.5
140
14
V
μA
V
V
MHz
pF
CLASSIFICATION OF hFE1
RANK
RANGE
B
60-120
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
C
100-200
D
160-320
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TYPICAL CHARACTERISTICS
DC Current Transfer Ratio, hFE
Collector to Emitter Saturation
Voltage vs. Collector Current
1.2
IC=10 IB
5°C
T A=7
25
0
25
20
0
15
0
-20
10
0
50
VCE=5V
1
3
1.0
0.8
25
75
0.6
0.4
0.2
0
Collector Output Capacitance,
Cob (pF)
20°C
T C=-
1
3
10
30
100 300
Collector Current, IC (mA)
Collector Output Capacitance
vs. Collector to Base Voltage
200
f=1MHz
IE=0
100
50
20
10
5
2
1
2
5
10
20
50 100
Collector to Base Voltage, VCB (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0.6
0.4
=7
TC
0.2
5 °C
-20
1
3
10
30
100 300 1000
Collector Current, IC (mA)
Gain Bandwidth Product vs.
Collector Current
240
VCE=5V
TA=25°C
200
160
120
80
40
0
10
1,000
30
100
300
Collector Current, IC (mA)
1,000
Area of Safe Operation
3
Collector Current, IC (A)
Base to Emitter Saturation
Voltage, VBE(SAT) (V)
Base to Emitter Saturation Voltage
vs. Collector Current
1.2
IC=10IB
0.8
0
10 30 100 300 1000 3000
Collector Current, IC (mA)
Gain Bandwidth Product, fT (MHz)
1
1.0
25
DC Current Transfer Ratio
vs. Collector Current
30
0
Collector to emitter saturation
voltage, VCE(SAT) (V)
„
NPN SILICON TRANSISTOR
(13.3V, 1.5A)
1.0
40V, 0.5A
2SD669A
0.3
0.1
DC Operation (TC=25°C)
(120V, 0.04A)
0.03
0.01
1
(160V, 0.02A)
2SD669
100
300
30
3
10
Collector to Emitter Voltage, VCE (V)
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„
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Typical Transfer Characteristics
500
VCE=5V
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage, VBE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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