QIS1260015 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Single IGBTMOD™ NX-Series Module 600 Amperes/1200 Volts A D E J F J G Y (4 PLACES) AD AE AF H 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Q ST 47 U 24 Z R S T Q 48 U AA B AB 23 DETAIL "B" 1 W V X M L 2 K 3 4 5 6 7 8 AG 9 10 11 12 13 14 15 16 17 18 19 20 21 22 N P K L DETAIL "A" AL AM AK AT AU E(24) E(23) AV C AR AS AP C(22) AW AN E1(16) AX G1(15) C(47) C(48) AQ DETAIL "A" Th NTC DETAIL "B" AJ AH AC (4 PLACES) TH1 (1) *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 TH2 (2) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T U V W X Y 12/10 Rev. 1 Inches Millimeters 5.98 152.0 2.44 62.0 0.67 17.0 5.39 137.0 4.79 121.7 4.33±0.02 110.0±0.5 3.89 99.0 3.72 94.5 0.53 13.5 0.15 3.8 0.28 7.25 0.30 7.75 1.95 49.54 0.9 22.86 0.55 14.0 0.87 22.0 0.67 17.0 0.48 12.0 0.24 6.0 0.16 4.2 0.37 6.5 0.83 21.14 M6 M6 Dimensions Inches Millimeters Z 1.53 39.0 AA 1.97±0.02 50.0±0.5 AB 2.26 57.5 AC 0.22 Dia. 5.5 Dia. AD 0.67+0.04/-0.0217.0+1.0/-0.5 AE 0.51 13.0 AF 0.27 7.0 AG 0.03 0.8 AH 0.81 20.5 AJ 0.12 3.0 AK 0.14 3.5 AL 0.21 5.4 AM 0.49 12.5 AN 0.15 3.81 AP 0.05 1.15 AQ 0.025 0.65 AR 0.29 7.4 AS 0.24 6.2 AT 0.17 Dia. 4.3 Dia. AU 0.10 Dia. 2.5 Dia. AV 0.08 Dia. 2.1 Dia. AW 0.06 1.5 AX 0.49 12.5 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected rectifier grade free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Rectifier Grade Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. QIS1260015 is a 1200V (VCES), 600 Ampere Single IGBTMOD™ Power Module. 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIS1260015 Single IGBTMOD™ NX-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics SymbolQIS1260015Units Power Device Junction Temperature Tj -40 to 150 °C Tstg -40 to 125 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M6 Main Terminal Screws — 40 in-lb Module Weight (Typical) — 330 Grams Baseplate Flatness, On Centerline X, Y (See Below) — ±0 ~ +100 µm Storage Temperature Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) VISO 2500Volts Inverter Sector Collector-Emitter Voltage (VGE = 0V) VCES 1200Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20Volts Collector Current (DC, TC = 90°C)*1,*5,*9IC Peak Collector Current (Pulse)*4I 600Amperes CM 1200Amperes Maximum Collector Dissipation (TC = 25°C)*1,*5PC Emitter Currentt (TC = 25°C)*1,*5,*9 3785Watts IE*3 600Amperes Peak Emitter Current (Pulse)*4IEM*3 1200Amperes *1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips. *3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *5 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *9 Use both of each main terminal (collector and emitter) to connect external wiring. BASEPLATE FLATNESS MEASUREMENT POINT CHIP LOCATION (TOP VIEW) IGBT FWDi NTC Thermistor 0 + : CONVEX HEATSINK SIDE – : CONCAVE Chip Location (Top View) Y 0 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 X – : CONCAVE 47 24 48 23 38.1 50.6 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 98.1 5 66.7 4 84.9 3 71.6 2 46.1 0 1 26.7 + : CONVEX HEATSINK SIDE Dimensions in mm (Tolerance: ±1mm) 2 12/10 Rev. 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIS1260015 Single IGBTMOD™ NX-Series Module 600 Amperes/1200 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Inverter Sector Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA VGE(th) IC = 60mA, VCE = 10V 6 7 8 Volts IGES VGE = VGES, VCE = 0V — — 0.5 μA VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C*6 — 2.0 2.6 Volts IC = 600A, VGE = 15V, Tj = 125°C*6 — 2.2 — Volts IC = 600A, VGE = 15V, Tj = 150°C*6 — 1.9 — Volts — — 100 nF — — 9.0 nF — — 2.0 nF — 3000 — nC Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V VCE = 10V, VGE = 0V Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 600A, — — 660 ns Load Turn-on Rise Time tr VGE = ±15V, — — 190 ns Switch Turn-off Delay Time td(off) RG = 2.2Ω, IE = 600A, — — 700 ns Time Turn-off Fall Time tf Inductive Loas Switching Operation — — 600 ns *3 Emitter-Collector Voltage VEC 25°C*6 — 1.0 1.2 Volts IE = 600A, VGE = 0V, Tj = 125°C*6 — 0.9 1.1 Volts IE = 600A, VGE = 0V, Tj = Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Module Lead Resistance Symbol Test Conditions Min. Typ. Max. Units Rlead Main Termnals-Chip (Per Switch) — 0.6 — mΩ Case*1 Rth(j-c)Q Per IGBT — — 0.033 °C/W Thermal Resistance, Junction to Case*1 Rth(j-c)D Per FWDi — — 0.028 °C/W Rth(c-f) Thermal Grease Applied — 0.015 — °C/W Thermal Resistance, Junction to Contact Thermal Resistance*1 (Per 1 Module)*2 (Case to Heatsink) Internal Gate Resistance External Gate Resistance RGint TC = 25°C 0.7 1.0 1.3 Ω TC = 125°C 1.4 2.0 2.6 Ω 1.0 — 10 Ω RG NTC Thermistor Sector, Tj = 25°C unless otherwise specified Characteristics Zero Power Resistance Deviation of Resistance B Constant Power Dissipation Symbol Test Conditions Min. Typ. Max. Units R TC = 25°C 4.85 5.00 5.15 kΩ ∆R/R TC = 100°C, R100 = 493Ω –7.3 — +7.8 % B(25/50) Approximate by Equation*9 — 3375 — K P25 TC = 25°C — — 10 mW *1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips. *2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. R25 1 1 *9 B(25/50) = In( )/( – ) R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50 [K], R50 T25 T50 T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K] 12/10 Rev. 1 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIS1260015 Single IGBTMOD™ NX-Series Module 600 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) VGE = 20V 800 12 600 11 400 200 10 9 0 4 6 8 400 600 4 2 0 800 1000 1200 IC = 240A 6 8 10 12 14 16 18 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 104 101 Cres 100 100 101 104 tf 103 td(off) td(on) tr 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load 101 101 102 SWITCHING TIME, (ns) Coes GATE-EMITTER VOLTAGE, VGE, (VOLTS) 200 IC = 600A CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) 10-1 10-1 102 103 td(off) td(on) tr tf 102 100 103 101 102 COLLECTOR CURRENT, IC, (AMPERES) GATE RESISTANCE, RG, (Ω) GATE CHARGE VS. VGE (INVERTER PART) SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 16 VCC = 400V VCC = 600V 12 8 4 1000 103 102 IC = 600A 2000 3000 4000 5000 101 100 101 20 VCC = 600V VGE = ±15V IC = 600A Tj = 125°C Inductive Load COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE, QG, (nC) 4 0 IC = 1200A 6 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Cies 0 1 8 COLLECTOR-CURRENT, IC, (AMPERES) 102 0 2 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) VGE = 0V 20 3 0 10 SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) CAPACITANCE, Cies, Coes, Cres, (nF) 103 2 SWITCHING TIME, (ns) 0 10 VGE = 15V Tj = 25°C Tj = 125°C VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load Eon Eoff 102 COLLECTOR CURRENT, IC, (AMPERES) 103 SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 1000 4 Tj = 25°C 13 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) 102 VCC = 600V VGE = ±15V IC = 600A Tj = 125°C Inductive Load Eon Eoff 101 100 100 101 102 GATE RESISTANCE, RG, (Ω) 12/10 Rev. 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) QIS1260015 Single IGBTMOD™ NX-Series Module 600 Amperes/1200 Volts 100 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - TYPICAL) 10-2 10-1 100 10-1 10-1 10-2 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.033°C/W (IGBT) 10-3 10-2 10-5 10-4 10-3 10-3 TIME, (s) 12/10 Rev. 1 5