QIS4506002 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com HV Single Discrete IGBT 60 Amperes/4500 Volts A C N D F G B E (3) H J G (2) C (BASE) E (1) K R Description: Powerex Single Non-isolated Discrete is designed specially for customer high voltage switching and pulse power applications. L E M Q P E (1) C (BASE) E (3) G (2) Features: Low Drive Requirement Low VCE(sat) Molybdenum Mounting Plate Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Inches Millimeters A 2.35 59.7 J 0.93 23.6 B 0.98 25.0 K 0.14 3.6 C 1.98 50.3 L 0.20 5.2 D 0.197 5.0 M 0.40 1.0 E 0.22 5.5 N 0.43 11.0 F 0.22 5.6 P 0.20 0.5 G 0.465 11.8 Q 0.12 3.0 H 0.27 6.9 R 0.208 Dia. 5.3 Dia. 01/10 Rev. 3 Dimensions 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIS4506002 HV Single Discrete IGBT 60 Amperes/4500 Volts Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol QIS4506002 Units Collector Emitter Voltage VCES 4500 Volts Gate Emitter Voltage VGES ±20 Volts IC 60 Amperes Collector Current (DC, TC = 127°C) Peak Collector Current (Pulsed) ICM 120* Amperes Junction Temperature Tj -55 to 150 °C Storage Temperature Tstg -55 to 125 °C Mounting Torque, M5 Mounting Screws — 30 in-lb Weight (Typical) — 20 Grams Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) Total Gate Charge QG IC = 60A, VGE = 15V, Tj = 25°C — 3.0 3.9** Volts IC = 60A, VGE = 15V, Tj = 125°C — 3.6 — Volts VCC = 2250V, IC = 60A, VGE = 15V — 450 — nC Min. Typ. Max. Units Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies — 9.0 — nF Output Capacitance Coes — 0.65 — nF VGE = 0V, VCE = 10V Reverse Transfer Capacitance Cres — 0.2 — nF Resistive Turn-on Delay Time td(on) — — 2.4 µs Load Rise Time Switching Turn-off Delay Time Times Fall Time VCC = 2250V, tr IC = 60A, — — 2.4 µs td(off) VGE1 = VGE2 = 15V, — — 6.0 µs tf RG = 120Ω — — 1.2 µs Turn-on Switching Energy Eon Tj = 125°C, IC = 60A, VCC = 2250V, — 250 — mJ/P Turn-off switching Energy Eoff VGE = ±15V, RG = 120Ω, LS = 180nH — 170 — mJ/P Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) IGBT — 0.10 TBD °C/W Thermal Resistance, Case to Sink Rth(c-s) λgrease = 1W/mK — 0.10 — °C/W Thermal Grease Applied * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed device rating. **Pulse width and repetition rate should be such that device junction temperature rise is negligible. 2 01/10 Rev. 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIS4506002 HV Single Discrete IGBT 60 Amperes/4500 Volts OUTPUT CHARACTERISTICS (TYPICAL) 875 14V 12V 10V 75 50 25 8V Tj = 25°C 2 4 8 6 625 500 375 250 125 0 10 0 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTAGE) IC = 100A IC = 50A IC = 25A 2 0 20 4 8 12 16 0 25 50 75 100 360 300 200 100 0 25 50 75 300 240 180 120 60 0 100 VCC = 2250V VGE = 15V RG = 120Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 0 25 50 75 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) GATE CHARGE CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) TURN-ON SWITCHING SAFE OPERATING AREA (RBSOA) (TYPICAL) 102 VCC = 2250V IC = 60A 12 8 4 Cies 100 Coes Cres 0 250 500 750 GATE CHARGE, QG, (nC) 01/10 Rev. 3 1000 10-1 100 100 125 VGE = 15V Tj = 25°C Cies, Coes: f = 100kHz Cres: f = 1MHz 101 10-1 125 TURN-OFF SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 2250V VGE = 15V RG = 120Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 400 0 20 16 0 1 GATE-EMITTER VOLTAGE, VGE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) GATE-EMITTER VOLTAGE, VGE, (VOLTS) TURN-ON SWITCHING ENERGY, Eon, (mJ/P) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 8 0 2 COLLECTOR CURRENT, IC, (AMPERES) 500 4 3 TURN-ON SWITCHING ENERGY CHARACTERISTICS (TYPICAL) Tj = 25°C 6 4 0 20 16 VGE = 15V Tj = 25°C Tj = 125°C 5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 12 8 TURN-OFF SWITCHING ENERGY, Eoff, (mJ/P) 0 750 COLLECTOR CURRENT, IC, (VOLTS) 0 6 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 15V COLLECTORCURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 75 50 VCC = 3000V VGE = 15V RG = 120Ω LS = 100nH Tj = 125°C 25 0 0 1000 2000 3000 4000 5000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3