QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 10 11 12 X B M N E G DETAIL "B" 20 19 18 17 16 15 14 13 L T S R W DETAIL "A" V H K C T DETAIL "A" D2 (4 - 6) D1 (10 - 12) G2 (19 - 20) G1 (15 - 16) S2 (17 - 18) S1 (13 - 14) S2 (1 - 3) S1 (7 - 9) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.32 109.8 Q 0.449 11.40 B 2.21 56.1 R 0.885 22.49 C 0.71 18.0 S 1.047 26.6 D 3.70±0.02 94.0±0.5 T 0.15 3.80 E 2.026 51.46 U 0.16 4.0 F 3.17 80.5 V 0.30 7.5 G 1.96 49.8 W 0.045 1.15 H 1.00 25.5 X 0.03 0.8 K 0.87 22.0 Y 0.16 4.0 L 0.266 6.75 Z M 0.26 6.5 AA 0.17 Dia. 0.47 4.3 Dia. 12.1 N 0.59 15.0 AB 0.10 Dia. 2.5 Dia. P 0.586 14.89 AC 0.08 Dia. 2.1 Dia. Features: £ Junction Temperature: 175°C £ Silicon Carbide Chips £ Low Internal Inductance £ Industry Leading RDS(on) £ High Speed Switching £ Low Switching Losses £ Low Capacitance £ Low Drive Requirement £ Fast 100A Free Wheeling Schottky Diode £ High Power Density £ Isolated Baseplate £ Aluminum Nitride Isolation £ 2 Individual Switches per Module £ Copper Baseplate £ RoHS Compliant Applications: £ Energy Saving Power Systems such as: Fans; Pumps; Consumer Appliances £ High Frequency Type Power Systems such as: UPS; High Speed Motor Drives; Induction Heating; Welder; Robotics £ High Temperature Power Systems such as: 2/7/14 Rev. 4 Power Electronics in Electric Vehicle and Aviation Systems 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolQJD1210010 Units Drain-Source Voltage (G-S Short) VDSS1200 Volts Gate-Source Voltage VGSS Drain Current (Continuous) at TC = 150°C Drain Current (Pulsed)* Maximum Power Dissipation (TC = 25°C, Tj < 175°C) ID -5 / +25 Volts 100Amperes ID(pulse)250Amperes PD 1080Watts Junction Temperature Tj -40 to 175 °C Storage Temperature Tstg -40 to 150 °C Mounting Torque, M6 Mounting Screws — 40 in-lb Module Weight (Typical) — 270 Grams V Isolation Voltage VRMS3000 Volts * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. 2 2/7/14 Rev. 4 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts MOSFET Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage V(BR)DSS ID = 50μA, VGS = 0 1200 — — Volts Zero Gate Voltage Drain Current** IDSS VGS = 0, VDS = 1200V — 0.35 2.6 mA Zero Gate Voltage Drain Current** IDSS VGS = 0, VDS = 1200V, Tj = 175°C — 0.40 4.0 mA Gate Leakage Current IGSS VDS = 0, VGS = 20V — — 1.5 µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 10mA 1.5 2.5 5.0 Volts VDS = VGS, ID = 10mA, Tj = 175°C 1.0 1.7 5.0 Volts Drain-Source On Resistance RDS(on) ID = 100A, VGS = 20V — 15 25 mΩ ID = 100A, VGS = 20V, Tj = 175°C — 20 32 mΩ VDD = 800V, ID = 100A — 140 — nC Gate to Source Charge Qgs Gate to Drain Charge Qgd VDD = 800V, ID = 100A — 220 — nC Total Gate Charge QG VCC = 800V, IC = 100A, VGS = -5/20V — 500 — nC Body Diode Forward Voltage VSD IF = 50A, VGS = -5V Volts Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) VDD = 800V, ID = 100A, tr VGS = -2/20V, td(off) RG = 6.8Ω — tf Inductive Load — Rise Time Turn-off Delay Time Fall Time VGS = 0, VDS = 800V, f = 1MHz — 4.0 — — 10.2 — nF — 1.0 — — 0.1 — nF nF — 17.2 — ns — 13.6 — ns 62 — ns 35.6— ns **Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage. 2/7/14 Rev. 4 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified Characteristics Diode Forward Voltage Diode Capacitive Charge Symbol VFM QC Test Conditions Min. Typ. Max. Units IF = 100A, VGS = -5V — 1.6 2.0 Volts IF = 100A, VGS = -5V, Tj = 175°C — 2.5 3.2 Volts VR = 1200V, IF = 100A, di/dt = 4000A/μs — 550 — nC Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction-to-Case Rth(j-c) MOSFET Part — — 0.138 °C/W Thermal Resistance, Junction-to-Case Rth(j-c) Diode Part — — 0.243 °C/W Contact Thermal Resistance Rth(c-s) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W Lint MOSFET Part — Internal Inductance 4 10— nH 2/7/14 Rev. 4 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts TYPICAL OUTPUT CHARACTERISTICS (Tj = 25ºC) TYPICAL OUTPUT CHARACTERISTICS (Tj = 175ºC) 600 500 VGE = 20V VGE = 20V 500 DRAIN CURRENT, ID, (AMPERES) DRAIN CURRENT, ID, (AMPERES) Tj = 25°C 18 400 16 300 14 200 12 10 100 0 0 4 8 12 16 12 200 10 100 0 12 16 NORMALIZED ON-RESISTANCE VS. TEMPERATURE Tj = 25°C Tj = 175°C 300 200 100 5 10 15 GATE SOURCE VOLTAGE, VGS, (VOLTS) 2/7/14 Rev. 4 8 TRANSFER CHARACTERISTICS (TYPICAL) 2.0 0 4 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) NORMALIZED ON-RESISTANCE DRAIN CURRENT, ID, (AMPERES) 14 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) 400 0 16 300 0 20 18 400 20 20 VGS = 20V 1.6 1.2 0.8 0.4 0 0 50 100 150 200 JUNCTION TEMPERATURE, Tj, (°C) 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts TYPICAL CAPACITANCE VS. DRAIN-SOURCE VOLTAGE GATE CHARGE VS. VGE 50nF CAPACITANCE, Ciss, Coss, Crss GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 VGS = 20V f = 1MHz Ciss 5nF Coss 500pF Crss 50pF 0 200 400 600 800 16 12 8 4 0 1000 ID = 100A 0 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) Vf = 25°C Vf = 150°C Vf = 175°C 100 50 0 1 2 FORWARD VOLTAGE, VF, (VOLTS) 6 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) FORWARD CURRENT, IF, (μA) 200 0 200 300 400 500 600 GATE CHARGE, QG, (nC) FREE-WHEEL SCHOTTKY DIODE FORWARD CHARACTERISTICS (TYPICAL) 150 100 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MOSFET) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.138°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) 2/7/14 Rev. 4 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.243°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) 2/7/14 Rev. 4 7