RN2101∼RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101, RN2102, RN2103, RN2104, RN2105, RN2106 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z Built-in bias resistors z Simplified circuit design z Fewer parts and simplified manufacturing process z Complementary to RN1101~RN1106 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2101 4.7 4.7 RN2102 10 10 RN2103 22 22 RN2104 47 47 RN2105 2.2 47 RN2106 4.7 47 JEDEC EIAJ TOSHIBA Weight: 2.4 mg Symbol Rating Unit VCBO −50 V VCEO −50 V Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage RN2101~2106 RN2101~2104 RN2105, 2106 Collector current Collector power dissipation Junction temperature Storage temperature range RN2101~2106 −10 VEBO −5 ― ― 2-2H1A V IC −100 mA PC 100 mW Tj 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 RN2101∼RN2106 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Symbol Test Circuit Min Typ. Max VCB = −50 V, IE = 0 ― ― −100 VCE = −50 V, IB = 0 ― ― −500 −0.82 ― −1.52 −0.38 ― −0.71 −0.17 ― −0.33 −0.082 ― −0.15 −0.078 ― −0.145 −0.074 ― −0.138 RN2101 30 ― ― RN2102 50 ― ― 70 ― ― 80 ― ― RN2105 80 ― ― RN2106 80 ― ― ― −0.1 −0.3 RN2101 −1.1 ― −2.0 RN2102 −1.2 ― −2.4 −1.3 ― −3.0 −1.5 ― −5.0 RN2105 −0.6 ― −1.1 RN2106 −0.7 ― −1.3 VCE = −5 V, IC = −0.1 mA −1.0 ― −1.5 −0.5 ― −0.8 RN2101~2106 ICBO ― ICEO Test Condition RN2101 RN2102 Emitter cut-off current RN2103 RN2104 VEB = −10 V, IC = 0 IEBO ― RN2105 VEB = −5 V, IC = 0 RN2106 DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) RN2103 RN2104 RN2101~2106 RN2103 RN2104 RN2101~2104 RN2105, 2106 hFE VCE (sat) VI (ON) ― ― ― VI (OFF) ― VCE = −5 V, IC = −10 mA IC = −5 mA, IB = −0.25 mA VCE = −0.2 V, IC = −5 mA Unit nA mA V V V Transition frequency RN2101~2106 fT ― VCE = −10 V, IC = −5 mA ― 200 ― MHz Collector Output capacitance RN2101~2106 Cob ― VCB = −10 V, IE = 0, f = 1 MHz ― 3 6 pF RN2101 3.29 4.7 6.11 RN2102 7 10 13 15.4 22 28.6 RN2104 32.9 47 61.1 RN2105 1.54 2.2 2.86 RN2106 3.29 4.7 6.11 RN2101~2104 0.9 1.0 1.1 Input resistor Resistor ratio RN2103 RN2105 R1 R1/R2 ― ― 0.0421 0.0468 0.0515 0.09 RN2106 2 kΩ 0.1 0.11 2007-11-01 RN2101∼RN2106 RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 3 2007-11-01 RN2101∼RN2106 RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 4 2007-11-01 RN2101∼RN2106 RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 5 2007-11-01 RN2101∼RN2106 RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 6 2007-11-01 RN2101∼RN2106 Type Name Marking RN2001 RN2102 RN2103 RN2104 RN2105 RN2106 7 2007-11-01 RN2101∼RN2106 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-11-01