ISAHAYA RT3U11M

PRELIMINARY
RT3U11M
Composite Transistor
For high speed switching
Silicon N-channel + P-channel MOSFET
DESCRIPTION
RT3U11M
is
a
composite
transistor
built
with
OUTLINE DRAWING
INK0001AX and INJ0001AX chips in SC-88 package.
Unit:mm
2.1
①
⑥
0.65
②
⑤
0.65
・Input impedance is high, and not necessary to consider a drive
③
④
0.2
1.25
FEATURE
electric current.
2.0
・Vth is low, and drive by low voltage is possible. Vth=0.6~1.2V
・Low on Resistance. Ron= 3.5 / 7Ω(Tr1/Tr2) TYP
・High speed switching.
・Small package for easy mounting.
APPLICATION
0.13
0.65
0.9
high speed switching , Analog switching
0~0.1
*P-channel MOSFET Tr2’s minus sign is omitted
⑤
⑥
TERMINAL
CONNECTOR
①:SOURCE1
②:GATE1
③:DRAIN2
④:SOURCE2
⑤:GATE2
⑥:DRAIN1
④
Tr.1
Tr.2
①
②
JEITA:SC-88
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
RATING
UNIT
V
VDSS
Drain-source voltage
50
VGSS
Gate-source voltage
±8
V
ID
Drain current
100
mA
PD
Total power dissipation(Ta=25℃)
Tch
Channel temperature
Tstg
Range of Storage temperature
150
mW
+125
℃
-55~+125
℃
MARKING
6
4
. 1
.U1
1
ISAHAYA ELECTRONICS CORPORATION
5
2
3
PRELIMINARY
RT3U11M
Composite Transistor
For high speed switching
Silicon N-channel + P-channel MOSFET
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
Limits
Test conditions
Min
Typ
Max
Unit
Drain-source breakdown voltage
I D=100μA, VGS=0V
50
-
-
V
IGSS
Gate-source leak current
V
GS=±5V, VDS=0V
-
-
±0.5
μA
IDSS
Zero gate voltage drain current
V
DS
Vth
Gate threshold voltage
I D=250μA, V
| Yfs |
Forward transfer admittance
V
RDS(ON)
Static drain-source on-state resistance
I D=100mA, V
Input capacitance
V
DS
Output capacitance
V
DS
Switching time
V
V
V(BR)DSS
Ciss
Coss
=50V ,VGS=0V
DS= V
=10V, I D=0.1A
=4.0V
GS
GS
=10V, V
GS
=0V,f=1MHz
=0V,f=1MHz
tON
tOFF
-
50
μA
-
1.2
V
Tr1
-
250
-
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
-
220
3.5
7.0
24
28
5.0
5.2
11
13
50
135
-
GS
DS
=10V, V
0.6
=5V , I D=10mA
=0~5V
GS
DD
Switching time test condition ( Tr.1 )
test circuit
OUT
5V
90%
IN
5V
RL
50Ω
0
input
waveform
10%
0V
VDD
10μs
VDD
VDD=5V
D.U.≦1%
Common source
Ta=25℃
10%
output
waveform
90%
VDS(ON)
tf
tr
toff
ton
Switching time test condition ( Tr.2 )
test circuit
OUT
IN
0
RL
50Ω
-5V
10μs
VDD=-5V
D.U.≦1%
Common source
Ta=25℃
0V
input
waveform
10%
90%
-5V
VDD
VDS(ON)
90%
output
waveform
10%
VDD
ton
ISAHAYA ELECTRONICS CORPORATION
tf
tr
toff
mS
Ω
pF
pF
ns
TYPICAL CHARACTERISTICS ( Tr.1 )
Ta=25℃
ID -VDS
1
100
1.6V
1.5V
1.0V
0.95V
0.8
Drain current ID (mA)
80
Drain current ID (mA)
ID -VDS(Low voltage region)
Ta=25℃
1.4V
60
1.3V
40
1.2V
20
0.6
0.4
0.2
1.1V
0
5
0.85V
VGS=0.8V
VGS=1.0V
0
0.9V
0
0
10
0.1
0.2
0.5
1000
100
Ta=25℃
VDS=10V
Ta=25℃
VGS=0V
Drain current ID (mA)
Drain reverse current IDR (mA)
0.4
ID -VGS
IDR -VDS
10
100
10
1
1
-0
-0.5
-1
-1.5
Drain-Source voltage VDS (V)
0
-2
1
2
3
Gate-Source voltage VGS (V)
|Yfs| - ID
4
5
VDS(ON) - ID
1000
1000
Ta=25℃
VDS=10V
Ta=25℃
VGS=4V
Drain-Source ON voltage
VDS(ON) (mV)
Forward transfer admittance
|Yfs| (mS)
0.3
Drain-Source voltage VDS (V)
Drain-Source voltage VDS (V)
100
10
100
10
1
1
1
10
100
Drain current ID (mA)
1000
1
10
Drain current ID (mA)
t - ID
100
C - VDS
10000
100
Ta=25℃
toff
Ciss
tf
Capacitance C (pF)
Switching time t (ns)
1000
100
ton
10
10
Coss
Ta=25℃
VGS=0V
tr
1
1
0.1
1
10
Drain current ID (mA)
100
0.1
1
10
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION
100
TYPICAL CHARACTERISTICS ( Tr.2 )
ID -VDS
Ta=25℃
ID -VDS(Low voltage region)
Ta=25℃
-100
-10
-1.6V
-1.5V
-8
-1.4V
-60
-1.3V
-40
-1.2V
-20
-1.0V
Drain current ID (mA)
Drain current ID (mA)
-80
-6
-0.95V
-4
VGS=-0.9V
-2
-1.1V
-0.85V
VGS=-1.0V
-0.8V
-0
-0
-0
-5
-10
-0
-0.1
Drain-Source voltage VDS (V)
-0.2
-0.4
-0.5
-2
-3
-4
Gate-Source voltage VGS (V)
-5
IDR -VDS
ID -VGS
-1000
Ta=25℃
VGS=0V
Ta=25℃
VDS=-10V
Drain current ID (mA)
Drain reverse current IDR (mA)
-100
-10
-100
-10
-1
-1
0
0.5
1
1.5
Drain-Source voltage VDS (V)
-0
2
-1
|Yfs| - ID
VDS(ON) - ID
-1000
1000
Ta=25℃
VDS=-10V
Drain-Source ON voltage
VDS(ON)(mV)
Forward transfet admittance |Yfs| (mS)
-0.3
Drain-Source voltage VDS (V)
100
10
1
Ta=25℃
VGS=-4V
-100
-10
-1
-1
-10
-100
Drain current ID (mA)
-1000
-1
-10
Drain current ID (mA)
-100
C - VDS
t - ID
100
10000
Ta=25℃
1000
tf
Capacitance C (pF)
Switching time t (ns)
toff
100
10
ton
Ciss
10
Ta=25℃
VGS=0V
Coss
tr
1
-0.1
-1
-10
Drain current ID (mA)
-100
1
-0.1
-1
-10
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION
-100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
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at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
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materials.
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·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
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Apr.2007