S1PHB36 Single Phase Half Controlled Bridge With Free Wheeling Diode Dimensions in mm (1mm=0.0394") Type 2 1 3 6 4 S1PHB36-08 S1PHB36-12 S1PHB36-14 S1PHB36-16 S1PHB36-18 VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 8 Symbol Test Conditions IdAV TK=85oC, module IdAVM module IFRMS, ITRMS per leg Maximum Ratings Unit 36 40 28 A ITSM, IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 320 350 280 310 A 2 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 500 520 390 400 A2s TVJ=125oC f=50Hz, tp=200us VD=2/3VDRM IG=0.3A diG/dt=0.3A/us repetitive, IT=50A 150 non repetitive, IT=1/2IdAV 500 It (di/dt)cr A/us TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us 10 5 W PGAVM 0.5 W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 (dv/dt)cr PGM VISOL Md Weight TVJ=TVJM IT=ITAVM 50/60Hz, RMS _ IISOL<1mA tp=30us tp=500us t=1min t=1s Mounting torque (M5) (10-32 UNF) o C 3000 3600 V~ 2-2.5 18-22 Nm lb.in. 50 g S1PHB36 Single Phase Half Controlled Bridge With Free Wheeling Diode Symbol IR, ID VT, VF VTO Test Conditions Characteristic Values Unit TVJ=TVJM; VR=VRRM; VD=VDRM TVJ=25oC 5 0.3 mA IT, IF=45A; TVJ=25oC 1.45 V For power-loss calculations only (TVJ=125oC) 0.85 V 13 rT VGT o m VD=6V; TVJ=25 C TVJ=-40oC 1.0 1.2 V VD=6V; TVJ=25oC TVJ=-40oC TVJ=125oC 65 80 50 mA IGT VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD TVJ=TVJM; VD=2/3VDRM 5 mA 150 200 100 mA 100 mA 2 us 150 us 75 uC o IL tG=30us; IG=0.3A; diG/dt=0.3A/us TVJ=25 C TVJ=-40oC TVJ=125oC IH TVJ=25oC; VD=6V; RGK= o tgd TVJ=25 C; VD=1/2VDRM IG=0.3A; diG/dt=0.3A/us tq TVJ=125oC; IT=15A; tp=300us; VR=100V Qr VD=2/3VDRM; dv/dt=20V/us; di/dt=-10A/us typ. RthJC per thyristor(diode); DC current per module 1.15 0.29 K/W RthJK per thyristor(diode); DC current per module 1.55 0.39 K/W dS Creeping distance on surface 12.6 mm dA Creepage distance in air 6.3 mm a Maximum allowable acceleration 50 m/s2 10 A 1000 1: IG T , T VJ = 125°C 2: IG T , T VJ = 25°C 3: IG T , T VJ = -40°C V VG T VJ = 25°C s tgd 100 1 1 2 typ. Limit 3 6 5 4 10 4: P GAV = 0.5 W 0.1 5: P GM = 1 W 6: P GM = 10 W IG D, T VJ = 125°C 1 10 100 1000 IG F ig. 1 G ate trigger range mA 1 10 100 mA 1000 IG F ig. 2 G ate controlled delay time tgd S1PHB36 Single Phase Half Controlled Bridge With Free Wheeling Diode 70 300 A A 60 I 2t T V J = 45°C 200 T V J = 45°C max. T V J = 125°C T V J = 25°C 40 VR = 0 V 2 As 250 I FS M typ. I F 50 103 50Hz, 80% V R R M T V J = 125°C 102 150 30 100 20 T V J = 125°C 50 10 0 0.0 0.5 1.0 1.5 V 0 0.001 2.0 0.01 0.1 VF 1 s 101 1 2 3 t F ig. 3 F orward current vers us voltage drop per diode F ig. 4 S urge overload current 4 5 6 7 ms 10 t F ig. 5 I 2t vers us time per diode 50 120 W A R thHA : 100 0.5 1.0 1.5 2.0 3.0 4.0 6.0 P tot 80 60 40 I d(AV)M K /W K /W K /W K /W K /W K /W K /W 30 20 40 10 20 0 0 10 20 30 40 A 0 20 40 60 80 I F(AV)M 0 100 120 °C 140 0 20 40 60 T amb F ig. 6 P ower dis s ipation vers us direct output current and ambient temperature 80 100 120 °C TH F ig. 7 Max. forward current vers us heats ink temperature 2.0 K /W 1.5 Z thJ H 1.0 C ons tants for Z thJ H calculation: i 1 2 3 4 0.5 0.0 0.001 0.01 0.1 F ig. 8 T rans ient thermal impedance junction to heats ink s 1 t 10 R thi (K /W) ti (s ) 0.005 0.2 0.875 0.47 0.008 0.05 0.06 0.25