SHINDENGEN General Purpose Rectifiers Dual OUTLINE DIMENSIONS S1ZA20 Case : 1Z iUnit : mm 200V 1.1A FEATURES ● Small SMT package ● Array ● High reliability with superior moisture resistance ● Applicable to Automatic Insertion APPLICATION ● Conventional Rectification ● Motor ● Home Appliances, Office Equipment ● Telecommunication, Factory Automation RATINGS ●Absolute Maximum Ratings (If not specified Tl=25℃) Item Symbol Storage Temperature Tstg Operating Junction Temperature Tj VRM Maximum Reverse Voltage Average Rectified Forward Current Peak Surge Forward Current IO IFSM Conditions 50Hz sine wave, R-load Ta=25℃ On alumina substrate 50Hz sine wave, R-load Ta=25℃ On alumina substrate 50Hz sine wave, R-load Ta=25℃ On glass-epoxy substrate 50Hz sine wave, R-load Ta=25℃ On glass-epoxy substrate 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ 1 element operation 2 element operation 1 element operation 2 element operation ●Electrical Characteristics (If not specified Tl=25℃) Item Symbol Conditions VF Forward Voltage IF=0.9A, Pulse measurement, Rating of per diode IR V R=VRM, Pulse measurement, Rating of per diode Reverse Current Thermal Resistance θja junction junction junction junction to to to to ambient ambient ambient ambient Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd On alumina substrate On alumina substrate On glass-epoxy substrate On glass-epoxy substrate 1 2 1 2 element element element element operation operation operation operation Ratings -40∼150 150 200 1.1 0.8 0.9 0.63 30 Unit ℃ ℃ V Ratings Max.1.1 Max.10 Max.93 Max.140 Max.120 Max.186 Unit V μA A A ℃/W S1ZAx Forward Voltage 10 Forward Current IF [A] 1 Tl=150°C [TYP] Tl=25°C [TYP] 0.1 Pulse measurement per diode 0.01 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage VF [V] 1.3 1.4 1.5 S1ZAx Forward Power Dissipation Forward Power Dissipation PF [W] 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 Average Rectified Forward Current IO [A] Tj= 150°C Sine wave 1.4 S1ZAx Derating Curve Average Rectified Forward Current IO [A] 1.4 PCB 1.2 (Alumina substrate) 1-circuit current 2-circuit current 1 (Glass-epoxy substrate) 1-circuit current 2-circuit current 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 Ambient Temperature Ta [°C] Alumina substrate Soldering land 1mmφ Conductor layer 20µm Substrate thickness 0.64mm Sine wave R-load Free in air Glass-epoxy substrate Soldering land 1mmφ Conductor layer 35µm 160 S1ZAx IFSM Peak Surge Forward Capability 40 10ms 10ms Peak Surge Forward Current IFSM [A] 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied 30 20 10 0 1 2 5 10 20 Number of Cycles [cycles] 50 100