SF1601G thru SF1608G ® Pb SF1601G thru SF1608G Pb Free Plating Product 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes Unit : inch (mm) TO-220AB .054(1.39) .045(1.15) .177(4.5)MAX Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System .038(0.96) .019(0.50) Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:Color band denotes cathode Mounting position: Any Weight: 2.03 grams .1(2.54) .50(12.7)MIN Application .624(15.87) .139(3.55) MIN .548(13.93) .196(5.00) .163(4.16) .269(6.85) .419(10.66) .387(9.85) .226(5.75) Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability .025(0.65)MAX .1(2.54) Case Case Positive Common Cathode Negative Common Anode Suffix "A" Case Doubler Series Connection Suffix "D" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Common Cathode Common Anode Suffix "A" Anode and Cathode Coexistence Suffix "D" SYMBOL SF1601G SF1602G SF1604G SF1605G SF1606G SF1608G SF1601GA SF1602GA SF1604GA SF1605GA SF1606GA SF1608GA SF1601GD SF1602GD SF1604GD SF1605GD SF1606GD SF1608GD UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 V Maximum Average Forward Rectified 16.0 IF(AV) o Current TC=100 C A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM 175 VF 0.98 150 A (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A 1.3 o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR uA 250 uA nS Trr 35 Typical junction Capacitance (Note 2) CJ 90 Operating Junction and Storage Temperature Range V 10.0 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) 1.7 R JC 2.2 TJ, TSTG -55 to + 150 pF o CW o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ SF1601G thru SF1608G ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 16 13 10 8 6 4 60 Hz Resistive or Inductive load Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 175 150 125 100 75 50 25 0 0 0 50 100 150 1 100 NUMBER OF CYCLES AT 60Hz o CASE TEMPERATURE, C FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 1000 SF1601G-SF1604G INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 SF1605G-SF1606G 1.0 SF1608G 0.1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/