SHINDENGEN Schottky Rectifiers (SBD) SF20SC4 Dual OUTLINE DIMENSIONS Case : FTO-220 Unit : mm 40V 20A FEATURES ● Tj150℃ ● PRRSM avalanche guaranteed ● Fully Isolated Molding ● High current capacity with Small Package ● Dielectric strength 2kV guaranteed APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Tj Operating Junction Temperature VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Repetitive Peak Surge Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=117℃ IFSM Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, Rating of per diode, Tj=25℃ PRRSM Pulse width 10μs, Rating of per diode, Tj=25℃ Repetitive Peak Surge Reverse Power Dielectric Strength Vdis Terminals to case, AC 1 minute Mounting Torque TOR (Recommended torque：0.3N･m) Ratings -55∼150 150 40 45 20 230 660 2 0.5 Unit ℃ ℃ V V A A W kV N･m ●Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions VF IF=10A, Pulse measurement, Rating of per diode Forward Voltage IR Reverse Current V R=VRM, Pulse measurement, Rating of per diode Cj f=1MHz, VR=10V, Rating of per diode Junction Capacitance Thermal Resistance θjc junction to case Ratings Max.0.55 Max.7.5 Typ.390 Max.2.0 Unit V mA pF ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd SF20SC4 Forward Voltage Forward Current IF [A] 10 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 Junction Capacitance Cj [pF] 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 SF20SC4 f=1MHz Tc=25°C TYP per diode SF20SC4 Reverse Current 1000 Tc=150°C [MAX] Tc=150°C [TYP] Reverse Current IR [mA] 100 Tc=125°C [TYP] Tc=100°C [TYP] 10 Tc=75°C [TYP] 1 Pulse measurement per diode 0.1 0 5 10 15 20 25 Reverse Voltage VR [V] 30 35 40 SF20SC4 Reverse Power Dissipation Reverse Power Dissipation PR [W] 35 DC D=0.05 0.1 30 25 0.2 0.3 20 0.5 15 10 SIN 0.8 5 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T SF20SC4 Forward Power Dissipation 20 DC Forward Power Dissipation PF [W] D=0.8 15 SIN 0.2 0.05 0.5 0.3 0.1 10 5 0 0 5 10 15 20 25 30 35 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T SF20SC4 Derating Curve Average Rectified Forward Current IO [A] 40 35 DC 30 D=0.8 25 0.5 SIN 20 0.3 15 0.2 0.1 10 0.05 5 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 20V IO 0 0 VR tp D=tp /T T SF20SC4 Peak Surge Forward Capability IFSM 300 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 250 non-repetitive, sine wave, Tj=25°C before surge current is applied 200 150 100 50 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP