DATA SHEET SF51G~SF58 G SEMICONDUCTOR SUPE RFAST RECOVERY RECTIFIERS VOLTAGE- 50 to 8 00 Volts CURRENT - 5.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. DO-201AD Unit:inch(mm) • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. .210 (5.3) .188 (4.8) DIA. • High surge capability. • Plastic package has Underwriters Laboratories 1.0 (25.4) MIN. Flammability Classification 94V-O utilizing .375 (9.5) .285 (7.2) Flame Retardant Epoxy Molding Compound. • High temperature soldering : 260°C / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS environment substance directive request 1.0 (25.4) MIN. MECHANICAL DATA .052 (1.3) .048 (1.2) DIA. • Case: Molded plastic, DO-201AD • Terminals: Axial leads, solderable to MIL-STD-202,Method 208 • Polarity: Color Band denotes cathode end • Mounting Position: Any • Weight: 0.04 ounce, 1.12 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz. UNITS SF51G SF52G SF53G SF54G SF55G SF56G SF57G SF58G Maximum Recurrent Peak Reverse Voltage 50 100 150 200 300 400 600 800 V Maximum RMS Voltage 35 70 105 140 210 320 420 640 V Maximum DC Blocking Voltage 50 100 150 200 300 400 600 800 V Maximum Average Forward Current .375"(9.5mm) lead length at TA=55 °C J Peak Forward Surge Current, IFM (surge):8.3ms single halfsine-wave superimposed on rated load(JEDEC method) 5.0 A 150.0 A 1.25 0.95 Maximum Forward Voltage at 5.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum DC Reverse Current at Rated DC Blocking Voltage TA=125 °C Maximum Reverse Recovery Time(Note 1) 1.70 V 5.0 µA 300 µA 35.0 nS Typical Junction capacitance (Note 2) 45 pF Typical Junction Resistance(Note 3) RθJA 25 °C /W -55 to +150 °C Operating and Storage Temperature Range TJ NOTES: 1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC 3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted http://www.yeashin.com 1 REV.02 20110725 RATINGS AND CHARACTERISTIC CURVES SF51G~SF588G FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10Ω NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) 1Ω NONINDUCTIVE | | | | | | | | +0.5A 0 -0.25A AVERAGE FORWARD CURRENT,(A) 50Ω NONINDUCTIVE (+) OSCILLISCOPE (NOTE 1) -1.0A NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 1cm 2. Rise Time= 10ns max., Source Impedance= 50 ohms. SET TIME BASE FOR 6 5 4 Single Phase 3 Half Wave 60Hz Resistive Or Inductive Load 2 0.375"(9.5mm) Lead Length 1 0 0 25 50 FIG.4-TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS 50 10 10 REVERSE LEAKAGE CURRENT, (µA) 50 4G G 6G SF5 58 F5 SF 57 G- 55G SF ~S SF5 1G~ 1.0 SF INSTANTANEOUS FORWARD CURRENT,(A) FIG.3-TYPICAL FORWARD 3.0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 .01 .4 .6 .8 1.0 1.2 1.4 1.6 100 125 150 175 3.0 1.0 Tj=100 C Tj=25 C 0.1 1.8 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) FORWARD VOLTAGE,(V) FIG.6-TYPICAL JUNCTION CAPACITANCE FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 150 JUNCTION CAPACITANCE,(pF) PEAK FORWARD SURGE CURRENT,(A) 75 AMBIENT TEMPERATURE,( C) 50 / 10ns / cm 120 90 Tj=25 C 8.3ms Single Half Sine Wave 60 JEDEC method 30 150 125 100 75 50 25 0 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz http://www.yeashin.com .01 .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 2 REV.02 20110725 50 100