SFF23N60M SFF23N60Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET TO-254 15 AMP, 600 Volts, 320 mΩ Avalanche Rated N-channel MOSFET TO-254Z Features: • • • • • • • • Note 1: maximum current limited by package configuration Advanced low gate charge process Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Maximum Ratings Symbol Value Units VDSS 600 V continuous transient VGS ±30 ±40 V @ TC = 25ºC @ TC = 125ºC ID1 ID2 15 7 A Max. Instantaneous Drain Current (Tj limited) @ TC = 25ºC ID3 23 A Max. Avalanche current @ L= 0.1 mH IAR 23 A Single / Repetitive Avalanche Energy @ L= 0.1 mH EAS / EAR 1500 / 30 mJ Total Power Dissipation @ TC = 25ºC PD 150 W TOP & TSTG -55 to +150 ºC Rjc 0.83 (typ.0.6) ºC /W Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO254 (M) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. TO254Z (Z) DATA SHEET #: FT0028A DOC SFF23N60M SFF23N60Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics 4/ Symbol Min Typ Max VGS = 0V, ID = 250μA BVDSS 600 620 –– V VGS = 10V, ID = 11.5A, Tj= 25oC VGS = 10V, ID = 25A, Tj=25oC VGS = 10V, ID = 11.5A, Tj= 125oC RDS(on) –– –– –– 300 300 670 320 –– –– mΩ VDS = VGS, ID = 4mA, Tj= 25oC VDS = VGS, ID = 1mA, Tj= 25oC VGS(th) 2.0 –– 3.5 3.4 4.5 –– V VGS = ±30V, Tj= 25oC VGS = ±20V, Tj= 125oC IGSS –– –– 20 30 ±100 –– nA VDS = 600V, VGS = 0V, Tj = 25oC VDS = 480V, VGS = 0V, Tj = 125oC IDSS –– –– 0.1 0.085 25 1 μA mA VDS = 10V, ID = 11.5A, Tj = 25oC gfs 10 20 –– Mho VGS = 10V VDS = 300V ID = 16.5A Qg Qgs Qgd –– –– –– 100 23 45 –– –– –– nC VGS = 10V VDS = 300V ID = 16.5A RG = 2.0Ω, pw= 3us td(on) tr td(off) tf –– –– –– –– 28 33 80 23 –– –– –– –– nsec IF = 23A, VGS = 0V IF = 16.5A, VGS = 0V VSD –– –– 1.0 0.87 1.5 –– V 210 tbd 1.3 250 –– –– nsec A μC 16.5 1.05 A –– –– –– pF Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 16.5A, di/dt = 100A/usec trr IRM(rec) Qrr –– –– –– Safe Operating Area VDS = 15.2V, 1 sec, Ta = 25oC VDS = 65V, 1 sec, Ta = 25oC SOA1 SOA2 –– –– Ciss Coss Crss –– –– –– Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz 4100 400 120 Units NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines / lead bending options / pinout configurations Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) DATA SHEET #: FT0028A DOC