SFH600 SERIES TRIOS* PHOTOTRANSISTOR OPTOCOUPLER FEATURES • High Current Transfer Ratios SFH600-0, 40 to 80% SFH600-1, 63 to 125% SFH600-2, 100 to 200% SFH600-3, 160 to 320% • Isolation Test Voltage (1 Sec.), 5300 VACRMS • VCEsat 0.25 (£0.4) V, IF=10 mA, IC=2.5 mA • High Quality Premium Device • Long Term Stability • Storage Temperature, –55∞ to +150∞C • Underwriters Lab File #E52744 V • VDE 0884 Available with Option 1 D E Dimensions in inches (mm) Pin One ID 3 2 1 Anode 1 .248 (6.30) .256 (6.50) Cathode 2 4 5 The coupler transmits signals between two electrically isolated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible insulating voltage. 5 Collector NC 3 6 4 Emitter .335 (8.50) .343 (8.70) .300 (7.62) typ. .039 (1.00) Min. .130 (3.30) .150 (3.81) DESCRIPTION The SFH600 is an optocoupler with a GaAs LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case, 20 AB DIN 41866. 6 Base 4° typ. 18° typ. .020 (.051) min. .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. .110 (2.79) .150 (3.81) .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) Characteristics (TA=25°C) Symbol Unit Condition Maximum Ratings Emitter Emitter Reverse Voltage................................................. 6 V DC Forward Current...................................... 60 mA Surge Forward Current (tp=10 µs).................. 2.5 A Total Power Dissipation.............................. 100 mW Forward Voltage VF 1.25 (≤1.65) V IF=60 mA Breakdown Voltage VBR ≥6 V IR=10 µA Reverse Current IR 0.01 (≤10) µA VR=6 V Capacitance CO 25 pF VF=0 V, f=1 MHz Thermal Resistance RTHJamb 750 °C/W Capacitance Collector-Emitter Collector-Base Emitter-Base CCE CCB CEB 5.2 6.5 9.5 Thermal Resistance RTHJamb 500 °C/W Saturation Voltage, Collector-Emitter VCEsat 0.25 (≤0.4) V IF=10 mA, IC=2.5 mA Coupling Capacitance CIO 0.6 pF VIO=0, f=1 MHz Detector Collector-Emitter Voltage ................................ 70 V Emitter-Base Voltage ....................................... 7 V Collector Current........................................... 50 mA Collector Current (t=1 ms) .......................... 100 mA Power Dissipation ...................................... 150 mW Package Isolation Test Voltage (between emitter and detector referred to climate DIN 40046, part 2, Nov. 74) (t=1 sec.)..............5300 VACRMS Creepage......................................................≥7 mm Clearance .......................................................... ≥7 mm Isolation Thickness between Emitter & Detector .....................................................≥0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1........................175 Isolation Resistance VIO=500 V, TA=25°C ................................... ≥1012 Ω VIO=500 V, TA=100°C................................. ≥1011 Ω Storage Temperature Range........ –55°C to +150°C Ambient Temperature Range....... –55°C to +100°C Junction Temperature ....................................100°C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane ≥1.5 mm) ....................................................260°C Detector pF f=1 MHz VCE=5 V VCB=5 V VEB=5 V Package *TRIOS—TRansparent IOn Shield 5–1 This document was created with FrameMaker 4.0.4 Current Transfer Ratio and Collector-Emitter Leakage Current by dash number IC/IF at VCE=5 V (IF=10 mA) IC/IF at VCE=5 V (IF=1 mA) Collector-Emitter Leakage Current (VCE=10 V) (ICEO) -0 -1 -2 -3 Unit 40-80 63125 100200 160320 % 30 (>13) 45 (>22) 70 (>34) 90 (>56) % 2 (≤ 35) 2 (≤ 35) 2 (≤ 35) 5 (≤ 70) nA Figure 3. Current transfer ratio versus diode current (TA=–25°C, VCE=5 V) IC/IF=f (IF) Figure 1. Linear operation (without saturation) RL=75 Ω IF IC VCC=5 V Figure 4. Current transfer ratio versus diode current (TA=0°C, VCE=5 V) IC/IF=f (IF) 47 Ω IF=10 mA, VCC=5 V, TA=25 °C, Typical Load Resistance RL 75 Ω Turn-On Time tON 3.2 µs Rise Time tR 2.0 µs Turn-Off Time tOFF 3.0 µs Fall Time tf 2.5 µs Cut-off Frequency FCO 250 kHz Figure 2. Switching operation (with saturation) IF 1 KΩ VCC=5 V Figure 5. Current transfer ratio versus diode current (TA=25°C, VCE=5 V)IC/ IF=f (IF) 47 Ω Typical -0 (IF=20 mA) -1 and -2 (IF=10 mA) -3 (IF=5 mA) Turn-On Time tON 3.7 4.5 5.8 µs Rise Time tR 2.5 3.0 4.0 µs Turn-Off Time tOFF 19 21 24 µs Fall Time tF 11 12 14 µs VCESAT 0.25 (≤0.4) V SFH600 5–2 Figure 6. Current transfer ratio versus diode current (TA=50°C) VCE=5 V IC/IF=f (IF) Figure 9. Transistor characteristics (HFE =550) SFH600-2, -3 IC=f(VCE) (TA=25°C, IF=0) Figure 12. Collector emitter off-state current ICEO=f (V, T) (TA=25°C, IF=0) Figure 7. Current transfer ratio versus diode current (TA=75°C) VCE=5V IC/IF=f (IF) Figure 10. Output characteristics SFH600-2, -3 (TA=25°C) IC=f(VCE) Figure 13. Saturation voltage versus collector current and modulation depth SFH600-0 VCEsat=f (IC) (TA=25°C) Figure 8. Current transfer ratio versus temperature (IF=10 mA, VCE=5 V) IC/IF=f(T) Figure 11. Forward voltage VF=f (IF) SFH600 5–3 Figure 14. Saturation voltage versus collector current and modulation depth SFH600-1 VCEsat=f (IC) (TA=25°C) Figure 17. Permissible pulse load D=parameter, TA=25°C, IF=f (tp) Figure 15. Saturation voltage versus collectorcurrent and modulation depth SFH600-2 VCEsat=f (IC) (TA=25°C) Figure 18. Permissible power dissipation for transistor and diode Ptot=f (TA) Figure 16. Saturation voltage versus collectorcurrent and modulation depth SFH600-3 VCEsat=f (IC) (TA=25°C) Figure 19. Permissible forward current diode Ptot=f (TA) Figure 20. Transistor capacitance C=f(VO) (TA=25°C, f=1 MHz) SFH600 5–4