VISHAY SFH608-2-X006

SFH608
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current, With
Base Connection, 5300 VRMS
Features
•
•
•
•
•
•
•
•
•
•
Very High CTR at IF = 1.0 mA, VCE = 0.5 V
Specified Minimum CTR at IF = 0.5 mA,
VCE = 1.5 V ≥ 32 % (typ. 120 %)
Good CTR Linearity with Forward Current
Low CTR Degradation
High Collector-Emitter Voltage VCEO = 55 V
Isolation Test Voltage: 5300 VRMS
Low Current Input
Low Coupling Capacitance
High Common Mode Transient Immunity
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60065
Applications
Telecommunications
Industrial Controls
Office Machines
Microprocessor System Interfaces
A
1
6 B
C
2
5 C
NC
3
4 E
e3
i179004
Pb
Pb-free
Description
The SFH 608 is an optocoupler designed for high current transfer ratio at low input currents with the output
transistor saturated. This makes the device ideal for
low current switching applications. The SFH608 is
packaged in a six pin plastic DIP.
Order Information
Part
Remarks
SFH608-2
CTR 63 - 125 %, DIP-6
SFH608-3
CTR 100 - 200 %, DIP-6
SFH608-4
CTR 160 - 320 %, DIP-6
SFH608-5
CTR 250 - 500 %, DIP-6
SFH608-2-X006
CTR 63 - 125 %, DIP-6 400 mil (option 6)
SFH608-2-X007
CTR 63 - 125 %, SMD-6 (option 7)
SFH608-2-X009
CTR 63 - 125 %, SMD-6 (option 9)
SFH608-3-X006
CTR 100 - 200 %, DIP-6 400 mil (option 6)
SFH608-3-X007
CTR 100 - 200 %, SMD-6 (option 7)
SFH608-4-X006
CTR 160 - 320 %, DIP-6 400 mil (option 6)
SFH608-4-X007
CTR 160 - 320 %, SMD-6 (option 7)
SFH608-5-X007
CTR 250 - 500 %, SMD-6 (option 7)
For additional information on the available options refer to
Option Information.
Document Number 83664
Rev. 1.4, 26-Oct-04
www.vishay.com
1
SFH608
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
VR
6.0
V
DC Forward current
IF
50
mA
IFSM
2.5
A
Pdiss
70
mW
Symbol
Value
Unit
VCE
55
V
Collector-base voltage
VCBO
55
V
Emitter-base voltage
VEBO
7.0
V
IC
50
mA
100
mA
Pdiss
150
mW
Symbol
Value
Unit
VISO
5300
VRMS
Surge forward current
Test condition
t ≤ 10 µs
Total power dissipation
Unit
Output
Parameter
Test condition
Collector-emitter voltage
Collector current
Surge collector current
tp ≤ 1.0 ms
Total power dissipation
Coupler
Parameter
Isolation test voltage (between
emitter and detector, refer to
climate DIN 40046 part 2
Nov. 74)
Test condition
t = 1.0 s
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 10
Ω
11
Storage temperature range
Tstg
- 55 to + 150
°C
Operating temperature range
Tamb
- 55 to + 100
°C
Tsld
260
°C
Soldering temperature
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2
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Document Number 83664
Rev. 1.4, 26-Oct-04
SFH608
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
Typ.
Max
1.1
1.5
Unit
Forward voltage
IF = 5.0 mA
VF
Reverse voltage
IR = 10 µA
VR
Reverse current
VR = 6.0 V
IR
0.01
Capacitance
VR = 0 V, f = 1.0 MHz
CO
25
pF
Rthja
1070
K/W
Thermal resistance
V
6.0
V
µA
10
Output
Symbol
Min
Voltage, collector-emitter
Parameter
ICE = 10 µA
Test condition
VCEO
55
Typ.
Max
Unit
V
Voltage, emitter-base
IEB = 10 µA
VEBO
7.0
V
Collector-emitter capacitance
VCE = 5.0, f = 1.0 MHz
CCE
10
pF
Collector - base capacitance
VCE = 5.0, f = 1.0 MHz
CCB
16
pF
Emitter - base capacitance
VCE = 5.0, f = 1.0 MHz
CEB
10
pF
Rthja
500
ICEO
10
Thermal resistance
Collector-emitter leakage
current
VCE = 10 V
K/W
200
nA
Coupler
Parameter
Test condition
Part
Coupling capacitance
Saturation voltage, collectoremitter
Symbol
Min
Typ.
CC
0.60
Max
Unit
pF
IC = 0.32 mA, IF = 1.0 mA
SFH608-2
VCEsat
0.25
0.4
V
IC = 0.5 mA, IF = 1.0 mA
SFH608-3
VCEsat
0.25
0.4
V
IC = 0.8 mA, IF = 1.0 mA
SFH608-4
VCEsat
0.25
0.4
V
IC = 01.25 mA, IF = 1.0 mA
SFH608-5
VCEsat
0.25
0.4
V
Current Transfer Ratio
Parameter
Coupling Transfer Ratio
Document Number 83664
Rev. 1.4, 26-Oct-04
Part
Symbol
Min
IF = 1.0 mA, VCE = 0.5 V
Test condition
SFH608-2
CTR
63
IF = 0.5 mA, VCE = 1.5 V
SFH608-2
CTR
32
IF = 1.0 mA, VCE = 0.5 V
SFH608-3
CTR
100
IF = 0.5 mA, VCE = 1.5 V
SFH608-3
CTR
50
IF = 1.0 mA, VCE = 0.5 V
SFH608-4
CTR
160
IF = 0.5 mA, VCE = 1.5 V
SFH608-4
CTR
80
IF = 1.0 mA, VCE = 0.5 V
SFH608-5
CTR
250
IF = 0.5 mA, VCE = 1.5 V
SFH608-5
CTR
125
Typ.
Max
125
75
%
%
200
120
%
%
320
200
%
%
500
300
Unit
%
%
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SFH608
Vishay Semiconductors
Switching Characteristics
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Turn-on time
IC = 2.0 mA (to adjust by IF),
RL = 100 Ω, VCC = 5.0 V
ton
8.0
µs
Rise time
IC = 2.0 mA (to adjust by IF),
RL = 100 Ω, VCC = 5.0 V
tr
5.0
µs
Turn-off time
IC = 2.0 mA (to adjust by IF),
RL = 100 Ω, VCC= 5.0 V
toff
7.5
µs
Fall time
IC = 2.0 mA (to adjust by IF),
RL = 100 Ω, VCC = 5.0 V
tf
7.0
µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF
RL
VCC
IC
47 Ω
VCE = 0.5 V,
CTR = f (TA, IF)
isfh608_01
isfh608_03
Figure 1. Switching Schematic
Figure 3. Current Transfer Ratio (typ.)
VCE = 1.5 V,
CTR = f (TA, IF)
IF = 1.0 mA,
VCE = 5.0 V, tON, tR,
tOFF, tF, = f (RL)
isfh608_04
isfh608_02
Figure 2. Switching Times
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4
Figure 4. Current Transfer Ratio (typ.)
Document Number 83664
Rev. 1.4, 26-Oct-04
SFH608
Vishay Semiconductors
VF = f (IF)
ICE = f
(VCE, IF)
isfh608_08
isfh608_05
Figure 8. Output Characteristics
Figure 5. Diode Forward Voltage (typ.)
IF = 1.0 mA, VF = f (TA)
IF = f (TA)
isfh608_06
isfh608_09
Figure 9. Permissible Forward Current Diode
Figure 6. Diode Forward Voltage (typ.)
Ptot = f (TA)
ICE = f
(VCE, IB)
isfh608_10
isfh608_07
Figure 7. Output Characteristics
Document Number 83664
Rev. 1.4, 26-Oct-04
Figure 10. Permissible Power Dissipation for Transistor and Diode
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5
SFH608
Vishay Semiconductors
f=1.0 MHz,CCE=f (VCE)
CCB=f (VCB),
CEB=f (VEB)
IF = 0, VCE = 10 V,
ICEO = f (TA)
isfh608_12
isfh608_11
Figure 11. Transistor Capacitance
Figure 12. Collector-Emitter Leakage Current vs.Temp.
Package Dimensions in Inches (mm)
3
2
1
4
5
6
pin one ID
.248 (6.30)
.256 (6.50)
ISO Method A
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.114 (2.90)
.130 (3.0)
.010 (.25)
typ.
.300–.347
(7.62–8.81)
i178004
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6
Document Number 83664
Rev. 1.4, 26-Oct-04
SFH608
Vishay Semiconductors
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
Document Number 83664
Rev. 1.4, 26-Oct-04
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18450
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7
SFH608
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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8
Document Number 83664
Rev. 1.4, 26-Oct-04