VISHAY SFH619A-X007

SFH619A
VISHAY
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain, 300 V BVCEO
Features
•
•
•
•
High Collector-emitter Voltage (VCEO = 300 V)
High Isolation Test Voltage, 5300 VRMS
Standard Plastic DIP-4 Package
Compatible with Toshiba TLP627
A
1
4
C
C
2
3
E
Agency Approvals
• UL - File No. E52744 System Code H or J
• BSI IEC60950 IEC60965
i179062
Description
Order Information
The SFH619A is optically coupled isolators with a
Gallium Arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while
maintaining a high degree of isolation between driving
and load circuits. These optocouplers can be used to
replace reed and mercury relays with advantages of
long life, high speed switching and elimination of
magnetic fields.
Part
Remarks
SFH619A
CTR > 1000 %, DIP-4
SFH619A-X007
CTR > 1000 %, SMD-4 (option 7)
SFH619A-X009
CTR > 1000 %, SMD-4 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Peak reverse voltage
Forward continuous current
Symbol
Value
Unit
VRM
6.0
V
60
mA
1.33
mW/°C
Pdiss
100
mW
IF
Derate linearly from 25 °C
Power dissipation
Output
Symbol
Value
Unit
Collector-emitter breakdown
voltage
Parameter
BVCEO
300
V
Emitter-collector breakdown
voltage
BVECO
0.3
V
IC
125
mA
2.00
mW/°C
150
mW
Collector (load) current
Test condition
Derate linearly from 25 °C
Power dissipation
Document Number 83674
Rev. 1.3, 20-Apr-04
Pdiss
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1
SFH619A
VISHAY
Vishay Semiconductors
Coupler
Parameter
Test condition
Symbol
Derate linearly from 25 °C
Value
Unit
3.33
mW/°C
Ptot
250
mW
VISO
5300
VRMS
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Total power dissipation
Isolation test voltage (between
emitter and detector, standard
climate: 23 °C/50 % RH, DIN
50014)
Isolation resistance
t=1s
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
11
Ω
≥ 10
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Tsld
260
°C
Soldering temperature
max. 10 s, DIP soldering:
distance to seating plane
≥ 1.5 mm
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = 10 mA
Test condition
Symbol
VF
Min
1.2
1.5
Unit
V
Reverse current
VR = 6.0 V
IR
0.02
10
µA
Capacitance
VR = 0 V
CO
14
pF
Output
Symbol
Min
Collector-emitter breakdown
voltage
Parameter
ICE = 100 µA
BVCEO
300
V
Emitter-collector breakdown
voltage
IEC = 100 µA
BVECO
0.3
V
Collector-emitter dark current
VCE = 200 V, TA = 25 °C
ICEO
VCE = 200 V, TA = 100 °C
ICEO
VCE = 0 V, f = 1.0 MHz
CCE
Collector-emitter capacitance
Test condition
Typ.
10
Max
Unit
200
nA
20
nA
39
pF
Coupler
Parameter
Collector-emitter saturation
voltage
Test condition
IF = 1.0 mA, IC = 10 mA
Symbol
VCEsat
Coupling capacitance
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2
VI-O = 0 V, f = 1.0 MHz
Min
Typ.
VCEsat
CC
0.3
0.6
Max
Unit
1.0
V
1.2
V
pF
Document Number 83674
Rev. 1.3, 20-Apr-04
SFH619A
VISHAY
Vishay Semiconductors
Current Transfer Ratio
Parameter
Test condition
IF = 1.0 mA, VCE = 1.0 V
Current Transfer Ratio
Symbol
Min
CTR
1000
Symbol
Min
Typ.
Max
Unit
%
Switching Characteristics
Parameter
Rise time
Fall time
Turn-on time
Turn-off time
Test condition
VCC = 10 V, IC = 10 mA, RL = 100 Ω
tr
VCC = 10 V, IF = 16 mA, RL = 180 Ω
VCC = 10 V, IC = 10 mA, RL = 100 Ω
Typ.
Max
Unit
3.5
µs
tr
1.0
µs
tf
14.5
µs
VCC = 10 V, IF = 16 mA, RL = 180 Ω
tf
20.5
µs
VCC = 10 V, IC = 10 mA, RL = 100 Ω
ton
4.5
µs
VCC = 10 V, IF = 16 mA, RL = 180 Ω
ton
1.5
µs
VCC = 10 V, IC = 10 mA, RL = 100 Ω
toff
29.0
µs
VCC = 10 V, IF = 16 mA, RL = 180 Ω
toff
53.5
µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF
VCC
RL
VCE
tR
VO
IF
Collector Current, IC (mA)
140
TA=100°C
100
TA = 25°C
80
TA = –40°C
60
40
20
tF
t ON
0
t OFF
0
isfh619a_01
5
10
15 20 25 30 35
Forward Current, IF (mA)
40
45
50
isfh619a_04
Fig. 1 Switching Waveform and Switching Schematic
Fig. 3 Collector Current vs. Forward Current
1000.00
90.00
VCE =1.2 V
100.00
Collector Current, IC (mA)
Collector Current, IC (mA)
120
VCE =1.0 V
10.00
1.00
0.10
0.01
0
1
10
Forward Current, IF (mA)
100
isfh619a_03
Fig. 2 Collector Current (mA) vs. Forward Current (mA)
Document Number 83674
Rev. 1.3, 20-Apr-04
IF = 10 (mA)
80.00
70.00
60.00
50.00
40.00
30.00
IF = 1 (mA)
20.00
10.00
0.00
–40
–20
0
20
40
60
Temperature, TA (°C)
80
100
isfh619a_05
Fig. 4 Collector Current vs. Ambient Temperature
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3
SFH619A
VISHAY
Vishay Semiconductors
140
1.2
120
1.0
Normalized CTR
Collector Current, IC (mA)
IF = 10 mA
100
80
60
40
IF = 1.0 mA
0.8
0.6
0.4
0.2
20
0
0.6
0.7
0.8
0.9
1.0
1.1
Collector-Emitter Voltage, VCE (V)
0
–40
1.2
–20
0
20
40
60
80
100
Temperature, TA (°C)
isfh619a_06
isfh619a_09
Fig. 5 Collector Current vs. Collector Emitter Voltage
Fig. 8 Normalized CTR vs. Temperature
1000.00
1000.00
ICEO (nA)
Time Switching, µs
VCE=300 V
100.00
VCE=200 V
VCE=50 V
10.00
1.00
tOFF
100.00
10.00
tON
0.10
–40
1.00
–20
0
20
40
60
80
100
0.1
Temperature, TA (°C)
isfh619a_07
1
Load Resistor, RL (kΩ)
10
isfh619a_10
Fig. 6 Collector-Emitter Dark Current vs. Collector-Emitter
Voltage over Temperature
Fig. 9 Switching Time vs. Load Resistor
Current Transfer Ratio, CTR
10000
VCE=1.2 V
1000
VCE=1 V
100
0.10
1.00
10.00
Forward Current, IF (mA)
100.00
isfh619a_08
Fig. 7 Current Transfer Ratio vs. Forward Current
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Document Number 83674
Rev. 1.3, 20-Apr-04
SFH619A
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
ISO Method A
3
4
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.130 (3.30)
.150 (3.81)
10°
4°
typ.
.018 (.46)
.022 (.56)
i178027
.020 (.508 )
.035 (.89)
.050 (1.27)
.100 (2.54)
Option 7
3°–9°
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
.008 (.20)
.012 (.30)
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
TYP.
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
Document Number 83674
Rev. 1.3, 20-Apr-04
.0098 (.249)
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18494
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5
SFH619A
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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6
Document Number 83674
Rev. 1.3, 20-Apr-04