Chip Silicon Rectifier SFM11-MH THRU SFM18-MH Formosa MS List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Rating and characteristic curves........................................................ 3 Pinning information........................................................................... 4 Marking........................................................................................... 4 Suggested solder pad layout............................................................. 4 Packing information.......................................................................... 5 Reel packing.................................................................................... 6 Suggested thermal profiles for soldering processes............................. 6 High reliability test capabilities........................................................... 7 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date DS-121402 2008/02/10 Revised Date 2010/11/10 Revision D Page. 7 Formosa MS Chip Silicon Rectifier SFM11-MH THRU SFM18-MH 1.0A Surface Mount Super Fast Rectifiers-50-600V Package outline Features SOD-123H • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. 0.146(3.7) 0.130(3.3) • Low profile surface mounted application in order to • • • • • • • optimize board space.. Tiny plastic SMD package. High current capability. Super fast reovery time for switching mode application. High surge current capability. Glass passivated chip junction. Lead-free parts meet RoHS requirments. Suffix "-H" indicates Halogen free parts, ex. SFM11-MH-H. 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H • Terminals :Plated terminals, solderable per MIL-STD-750, 0.031(0.8) Typ. Dimensions in inches and (millimeters) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Maximum ratings and Electrical Characteristics (AT PARAMETER T A=25 oC unless otherwise noted) CONDITIONS O Forward rectified current Ambient temperature = 50 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T J = 25 OC Reverse current UNIT IO 1.0 A I FSM 25 A f=1MHz and applied 4V DC reverse voltage Storage temperature *1 V RRM (V) V RMS*2 (V) *3 VR (V) SFM11-MH 50 35 50 SFM12-MH 100 70 100 SFM13-MH 150 105 150 SFM14-MH 200 140 200 SFM15-MH 300 210 300 SFM16-MH 400 280 400 SFM17-MH 500 350 500 SFM18-MH 600 420 600 *4 VF (V) TYP. 5.0 Operating temperature T J, ( OC) *5 t rr (ns) uA 100 10 CJ T STG SYMBOLS MIN. IR V R = V RRM T J = 125 OC Diode junction capacitance MAX. Symbol pF O +175 -65 C *1 Repetitive peak reverse voltage *2 RMS voltage 0.95 *3 Continuous reverse voltage 35 -55 to +150 1.25 *4 Maximum forward voltage@I F=1.0A *5 Reverse recovery time, note 1 1.70 Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date DS-121402 2008/02/10 Revised Date 2010/11/10 Revision D Page. 7 Rating and characteristic curves (SFM11-MH THRU SFM18-MH) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) -M 16 M -M H H~ SF 18 -M FM 15 M SF M 17 -M H ~S SF 1.0 H ~S FM 14 -M H SF M1 1-M H .1 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE (°C) TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) PEAK FORWAARD SURGE CURRENT,(A) .001 .4 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 8.3ms Single Half TJ=25 C Sine Wave 20 JEDEC method 10 0 1 5 (+) 1W NONINDUCTIVE 50 10 100 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 70 trr JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) 10 | | | | | | | | +0.5A 0 -0.25A -1.0A 60 50 40 30 20 10 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date DS-121402 2008/02/10 Revised Date 2010/11/10 Revision D Page. 7 Chip Silicon Rectifier SFM11-MH THRU SFM18-MH Formosa MS Pinning information Pin Pin1 Pin2 Simplified outline cathode anode 1 Symbol 2 1 2 Marking Type number Marking code SFM11-MH SFM12-MH SFM13-MH SFM14-MH SFM15-MH SFM16-MH SFM17-MH SFM18-MH S1 S2 S3 S4 S5 S6 S7 S8 Suggested solder pad layout C A B Dimensions in inches and (millimeters) PACKAGE A B C SOD-123H 0.071 (1.80) 0.051 (1.30) 0.067 (1.70) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date DS-121402 2008/02/10 Revised Date 2010/11/10 Revision D Page. 7 Formosa MS Chip Silicon Rectifier SFM11-MH THRU SFM18-MH Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOD-123H Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.00 3.85 1.10 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date DS-121402 2008/02/10 Revised Date 2010/11/10 Revision D Page. 7 Chip Silicon Rectifier SFM11-MH THRU SFM18-MH Formosa MS Reel packing PACKAGE SOD-123H REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) 3,000 4.0 BOX (pcs) 30,000 INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (m/m) (m/m) (m/m) (pcs) (kg) 183*183*123 178 382*262*387 240,000 8.5 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date DS-121402 2008/02/10 Revised Date 2010/11/10 Revision D Page. 7 Chip Silicon Rectifier SFM11-MH THRU SFM18-MH Formosa MS High reliability test capabilities Item Test Conditions Reference O 1. Solder Resistance at 260 ± 5 C for 10 ± 2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 OC for 5 sec. MIL-STD-202F METHOD-208 3. High Temperature Reverse Bias V R=80% rate at T J=150 OC for 168 hrs. MIL-STD-750D METHOD-1038 4. Forward Operation Life Rated average rectifier current at T A=25 OC for 500hrs. MIL-STD-750D METHOD-1027 T A = 25 OC, I F = I O On state: power on for 5 min. off state: power off for 5 min. on and off for 500 cycles. MIL-STD-750D METHOD-1036 5. Intermittent Operation Life 6. Pressure Cooker JESD22-A102 15P SIG at T A=121 OC for 4 hrs. 7. Temperature Cycling -55 OC to +125 OC dwelled for 30 min. and transferred for 5min. total 10 cycles. 8. Thermal Shock 0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles. MIL-STD-750D METHOD-1056 9. Forward Surge 8.3ms single half sine-wave superimposed on rated load, one surge. MIL-STD-750D METHOD-4066-2 10. Humidity at T A=85 OC, RH=85% for 1000hrs. MIL-STD-750D METHOD-1021 11. High Temperature Storage Life at 175 OC for 1000 hrs. MIL-STD-750D METHOD-1031 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 MIL-STD-750D METHOD-1051 Document ID Issued Date DS-121402 2008/02/10 Revised Date 2010/11/10 Revision D Page. 7