SPW35N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS(on),max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances P-TO247 • Improved transconductance Type Package Ordering Code Marking SPW35N60C3 P-TO247 Q67040-S4673 35N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 34.6 T C=100 °C 21.9 Unit A Pulsed drain current1) I D,pulse T C=25 °C 103.8 Avalanche energy, single pulse E AS I D=17.3 A, V DD=50 V 1500 Avalanche energy, repetitive t AR1),2) E AR I D=34.6 A, V DD=50 V 1.5 Avalanche current, repetitive t AR1) I AR Drain source voltage slope dv /dt I D=34.6 A, V DS=480 V, T j=125 °C 50 V/ns Gate source voltage V GS static ±20 V V GS AC (f >1 Hz) ±30 Power dissipation P tot T C=25 °C 313 W Operating and storage temperature T j, T stg -55 ... 150 °C Rev. 1.0 34.6 page 1 mJ A 2004-05-10 SPW35N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - - 0.4 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=34.6 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=1.9 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=600 V, V GS=0 V, T j=150 °C - - 100 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=21.9 A, T j=25 °C - 0.081 0.1 Ω V GS=10 V, I D=21.9 A, T j=150 °C - 0.2 - Gate resistance RG f =1 MHz, open drain - 0.6 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=21.9 A - 36 - Rev. 1.0 page 2 S 2004-05-10 SPW35N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - 4500 - - 1500 - - 100 - - 180 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy C o(er) related3) V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related4) C o(tr) - 324 - Turn-on delay time t d(on) - 10 - Rise time tr - 5 - Turn-off delay time t d(off) - 70 - Fall time tf - 10 - Gate to source charge Q gs - 18 - Gate to drain charge Q gd - 70 - Gate charge total Qg - 150 200 Gate plateau voltage V plateau - 5.3 - V DD=480 V, V GS=10 V, I D=34.6 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=480 V, I D=34.6 A, V GS=0 to 10 V nC V 1) Pulse width limited by maximum temperature T j,max only 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 4) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 1.0 page 3 2004-05-10 SPW35N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - - 34.6 - - 103.8 - 0.95 1.2 V - 600 - ns - 21 - µC - 90 - A Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm T C=25 °C V GS=0 V, I F=34.6 A, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs A Typical Transient Thermal Characteristics Symbol Value Unit Symbol typ. R th1 0.00441 R th2 Value Unit typ. K/W C th1 0.00037 0.00608 C th2 0.00223 R th3 0.0341 C th3 0.00315 R th4 0.0602 C th4 0.0179 R th5 0.0884 C th5 0.098 C th6 4.45) Ws/K 5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. Rev. 1.0 page 4 2004-05-10 SPW35N60C3 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 400 103 limited by on-state resistance 300 1 µs 102 100 µs I D [A] P tot [W] 10 µs 200 101 DC 1 ms 10 ms 100 100 0 10-1 0 40 80 120 160 100 101 T C [°C] 102 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 100 100 7V 20 V Z thJC [K/W] 6.5 V 80 0.5 10-1 103 0.2 6V 60 I D [A] 0.1 0.05 5.5 V 40 -2 10 0.02 0.01 5V single pulse 20 4.5 V 4V 10-3 10-6 0 10-5 10-4 10-3 10-2 10-1 100 5 10 15 20 V DS [V] t p [s] Rev. 1.0 0 page 5 2004-05-10 SPW35N60C3 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 0.8 60 20 V 6V 7V 50 0.7 5.5 V 6.5 V 0.6 4.5 V 4V 5.5 V 5V 40 R DS(on) [Ω] I D [A] 0.5 5V 30 0.4 6V 0.3 20 4.5 V 20 V 0.2 10 4V 0.1 0 0 0 5 10 15 0 20 10 20 30 V DS [V] 40 50 60 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=21.9 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.3 100 25 °C 0.25 80 60 0.15 98 % 0.1 40 typ 20 0.05 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 150 °C I D [A] R DS(on) [Ω] 0.2 0 2 4 6 8 10 V GS [V] page 6 2004-05-10 SPW35N60C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=34.6 A pulsed I F=f(V SD) parameter: V DD parameter: T j 12 103 10 25 °C, 98% 25 °C 102 8 120 V 150 °C, 98% 480 V I F [A] V GS [V] 150 °C 6 101 4 100 2 10-1 0 0 50 100 150 200 0 0.5 1 1.5 2 2.5 V SD [V] Q gate [nC] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=17.3 A; V DD=50 V 40 1600 30 1200 E AS [mJ] I AV [A] parameter: T j(start) 20 25 °C 125 °C 10 400 0 0 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 20 60 100 140 180 T j [°C] t AR [µs] Rev. 1.0 800 page 7 2004-05-10 SPW35N60C3 13 Drain-source breakdown voltage 14 Typ. capacitances V BR(DSS)=f(T j); I D=0.25 mA C =f(V DS); V GS=0 V; f =1 MHz 700 105 660 104 C [pF] V BR(DSS) [V] Ciss 620 103 Coss 102 580 Crss 101 540 -60 -20 20 60 100 140 180 T j [°C] 0 100 200 300 400 500 V DS [V] 15 Typ. C oss stored energy E oss= f(V DS) 30 25 E oss [µJ] 20 15 10 5 0 0 100 200 300 400 500 600 V DS [V] Rev. 1.0 page 8 2004-05-10 SPW35N60C3 Definition of diode switching characteristics P-TO247: Outline Dimensions in mm Rev. 1.0 page 9 2004-05-10 SPW35N60C3 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 2004-05-10