SPW35N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.118 Ω R DS(on),max • Intrinsic fast-recovery body diode V ID 34 A • Extremely low reverse recovery charge • Ultra low gate charge PG-TO247 • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Type Package Ordering Code Marking SPW35N60CFD PG-TO247 Q67045A5053 35N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 34.1 T C=100 °C 21.6 85 Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=10 A, V DD=50 V 1300 Avalanche energy, repetitive t AR2),3) E AR I D=20 A, V DD=50 V 1 Avalanche current, repetitive t AR2),3) I AR Drain source voltage slope dv /dt Reverse diode dv /dt dv /dt Maximum diode commutation speed Gate source voltage A mJ 20 A 80 V/ns 40 V/ns di /dt I S=34.1 A, V DS=480 V, T j=125 °C 600 A/µs V GS static ±20 V AC (f >1 Hz) ±30 T C=25 °C 313 W -55 ... 150 °C Power dissipation P tot Operating and storage temperature T j, T stg Rev. 1.3 I D=34.1 A, V DS=480 V, T j=125 °C Unit page 1 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 0.4 leaded - - 62 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA Soldering temperature, wave soldering T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=34.1 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=1.9 mA 3 4 5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 4 - V DS=600 V, V GS=0 V, T j=150 °C - 3300 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=21.6 A, T j=25 °C - 0.10 0.118 Ω V GS=10 V, I D=21.6 A, T j=150 °C - 0.23 - Gate resistance RG f =1 MHz, open drain - 0.6 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=21.6 A - 21 - Rev. 1.3 page 2 S 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - 5060 - - 1400 - - 52 - - 162 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy related4) C o(er) Effective output capacitance, time related5) C o(tr) - 299 - Turn-on delay time t d(on) - 20 - Rise time tr - 25 - Turn-off delay time t d(off) - 65 - Fall time tf - 12 - Gate to source charge Q gs - 36 - Gate to drain charge Q gd - 87 - Gate charge total Qg - 163 212 Gate plateau voltage V plateau - 7.2 - V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=34.1 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=480 V, I D=34.1 A, V GS=0 to 10 V 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 1.3 page 3 nC V 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 34.1 - - 85 - 1.0 1.2 V - 180 - ns - 1.5 - µC - 16 - A Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm T C=25 °C V GS=0 V, I F=34.1 A, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs A Typical Transient Thermal Characteristics Symbol Value Unit Symbol typ. R th1 0.00441 R th2 Value Unit typ. K/W C th1 0.00037 0.00608 C th2 0.00223 R th3 0.0341 C th3 0.00315 R th4 0.0602 C th4 0.0179 R th5 0.0884 C th5 0.098 C th6 4.45) Ws/K 5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. Rev. 1.3 page 4 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 400 102 limited by on-state resistance 10 µs 1 µs 100 µs 300 101 1 ms 10 ms I D [A] P tot [W] DC 200 100 100 10-1 0 0 40 80 120 100 160 101 102 V DS [V] T C [°C] 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 100 90 20 V Z thJC [K/W] 8V 60 0.2 I D [A] 0.1 0.05 10-2 10 V 75 0.5 10-1 103 7V 0.02 0.01 45 30 single pulse 6.5 V 15 6V 5.5 V 10 -3 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0 5 10 15 20 V DS [V] t p [s] Rev. 1.3 5V 0 -6 page 5 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 0.5 60 10 V 20 V 50 0.4 8V 40 R DS(on) [Ω] I D [A] 7V 30 6.5 V 0.3 5.5 V 5V 6.5 V 6V 7V 20 V 0.2 20 6V 0.1 5.5 V 10 5V 0 0 0 5 10 15 0 20 10 20 V DS [V] 30 40 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=21.9 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.3 150 0.25 120 C °25 90 0.15 I D [A] R DS(on) [Ω] 0.2 98 % 60 typ C °150 0.1 30 0.05 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.3 0 2 4 6 8 10 V GS [V] page 6 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=34.1 A pulsed I F=f(V SD) parameter: V DD parameter: T j 12 102 25 °C, 98% 120 V 25 °C 10 150 °C, 98% 480 V 150 °C 101 I F [A] V GS [V] 8 6 4 100 2 0 10-1 0 50 100 150 200 0 0.5 1 1.5 2 140 180 V SD [V] Q gate [nC] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=10 A; V DD=50 V parameter: T j(start) 25 1400 1200 20 1000 I AV [A] E AS [mJ] 15 10 800 600 25 °C 125 °C 400 5 200 0 10-3 0 10-2 10-1 100 101 102 103 t AR [µs] Rev. 1.3 20 60 100 T j [°C] page 7 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD 14 Typ. capacitances V BR(DSS)=f(T j); I D=10 mA C =f(V DS); V GS=0 V; f =1 MHz 700 105 660 104 C [pF] V BR(DSS) [V] 13 Drain-source breakdown voltage 620 Ciss 103 Coss 102 580 Crss 101 540 -60 -20 20 60 100 140 0 180 100 200 T j [°C] 300 400 500 125 150 V DS [V] 15 Typ. C oss stored energy 16 Typ. reverse recovery charge E oss= f(V DS) Q rr=f(T j); I S=34.1 A; di /dt =100 A/µs 30 3 2.8 25 2.6 20 Q rr [µC] E oss [µJ] 2.4 15 2.2 2 10 1.8 5 1.6 0 1.4 0 100 200 300 400 500 600 V DS [V] Rev. 1.3 25 50 75 100 T j [°C] page 8 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD 17 Typ. reverse recovery charge 18 Typ. reverse recovery charge Q rr=f(I S); di/ dt =100 A/µs Q rr=f(di /dt ); I S=34.1 A parameter: T j parameter: T j 3 7 6 2.5 125 °C 5 125 °C Q rr [µC] Q rr [µC] 2 1.5 4 3 25 °C 25 °C 1 2 0.5 1 0 0 5 10 15 20 25 30 35 I S [A] Rev. 1.3 0 0 300 600 900 di/ dt [A/µs] page 9 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD Definition of diode switching characteristics Rev. 1.3 page 10 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD PG-TO247-3-21-41 Rev. 1.3 page 11 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60CFD Rev. 1.3 page 12 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A Data sheet erratum PCN 2009-134-A New package outlines TO-247 1 New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Rev. 2.0, 2010-02-01