SPW47N60S5 Final data Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPW47N60S5 Package P-TO247 Ordering Code Q67040-S4240 Marking 47N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value A TC = 25 °C 47 TC = 100 °C 30 Pulsed drain current, tp limited by Tjmax I D puls Avalanche energy, single pulse EAS Unit 94 1800 mJ I D = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1 I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 20 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 415 W Operating and storage temperature T j , T stg -55... +150 °C Page 1 2003-07-02 SPW47N60S5 Final data Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 47 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 0.3 Thermal resistance, junction - ambient, leaded RthJA - 45 - Soldering temperature, Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=2700µΑ, VGS=V DS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C, - 0.5 25 Tj=150°C - - 250 V GS=20V, VDS=0V - - 100 Ω V GS=10V, ID=30A, Tj=25°C - 0.06 0.07 Tj=150°C - 0.16 - f=1MHz, open Drain - 8.7 - Page 2 nA 2003-07-02 SPW47N60S5 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol gfs Conditions VDS≥2*ID*RDS(on)max, Values Unit min. typ. max. - 30 - S pF ID=30A Input capacitance Ciss VGS=0V, VDS=25V, - 7600 - Output capacitance Coss f=1MHz - 2900 - Reverse transfer capacitance Crss - 27 - Turn-on delay time td(on) VDD=-V, VGS=0/10V, - 360 - Rise time tr ID=47A, RG=1.3Ω - 30 - Turn-off delay time td(off) - 200 300 Fall time tf - 30 45 - 56 - - 123 - - 220 286 - 8 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=-V, ID =47A VDD=-V, ID =47A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=-V, ID =47A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV Page 3 2003-07-02 SPW47N60S5 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 47 - - 94 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=-V, IF=IS , - 650 1100 ns Reverse recovery charge Qrr diF/dt=100A/µs - 24 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.002689 R th2 Cth1 0.001081 0.005407 Cth2 0.004021 R th3 0.011 Cth3 0.005415 R th4 0.054 Cth4 0.014 R th5 0.071 Cth5 0.025 R th6 0.036 Cth6 0.158 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-07-02 SPW47N60S5 Final data 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 500 10 2 SPW47N60S5 W A 400 10 1 ID Ptot 350 300 10 0 250 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 200 150 10 -1 100 50 0 0 20 40 60 80 100 °C 120 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Typ. output characteristic 4 Typ. output characteristic ID = f (VDS); Tj=25°C ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 220 110 A A 20V 15V 12V 180 11V 90 10V 80 10V 140 ID ID 160 120 9V 70 8.5V 60 100 9V 80 60 8V 40 7V 20 0 0 20V 12V 5 10 15 V 50 8V 40 7.5V 30 7V 20 6.5V 6V 10 25 VDS 0 0 5 10 15 V 25 VDS Page 5 2003-07-02 3 SPW47N60S5 Final data 5 Typ. drain-source on resistance 6 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150°C, VGS parameter : ID = 30 A, VGS = 10 V 0.5 0.4 0.32 9V 0.35 SPW47N60S5 Ω RDS(on) mΩ RDS(on) 0.38 6V 6.5V 7V 7.5V 8V 8.5V 0.28 0.24 0.2 0.3 10V 12V 0.16 0.25 0.12 20V 0.2 98% 0.08 0.15 typ 0.04 0.1 0 20 40 60 A ID 80 0 -60 110 -20 20 60 °C 180 Tj 7 Typ. transfer characteristics 8 Typ. gate charge ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 47 A pulsed parameter: tp = 10 µs 16 220 A SPW47N60S5 V 0.2 VDS max 180 12 0.8 VDS max VGS 160 ID 100 140 10 120 8 100 6 80 60 4 40 2 20 0 0 2 4 6 8 10 12 14 V 18 0 0 40 80 120 160 200 240 280 nC 360 Q Gate VGS Page 6 2003-07-02 SPW47N60S5 Final data 9 Forward characteristics of body diode 10 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C 2 SPW47N60S5 10 20 A A IF IAR 10 1 10 Tj(START)=25°C 10 0 Tj = 25 °C typ 5 Tj = 150 °C typ Tj = 25 °C (98%) Tj(START)=125°C Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 -3 10 3 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR VSD 11 Avalanche energy 12 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: ID = 10 A, VDD = 50 V 2000 720 mJ V V(BR)DSS 1600 1400 EAS SPW47N60S5 1200 680 660 640 1000 620 800 600 600 580 400 560 200 0 20 40 60 80 100 120 °C 160 Tj 540 -60 -20 20 60 100 °C 180 Tj Page 7 2003-07-02 SPW47N60S5 Final data 13 Avalanche power losses 14 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: E AR=1mJ parameter: V GS=0V, f=1 MHz 10 5 500 pf Ciss 10 4 300 C PAR W 10 3 Coss 10 2 200 Crss 10 1 100 0 4 10 10 5 Hz 10 6 10 0 0 10 20 30 40 50 60 70 80 V 100 VDS f 15 Typ. Coss stored energy Eoss=f(VDS) 40 µJ Eoss 30 25 20 15 10 5 0 0 100 200 300 400 V 600 VDS Page 8 2003-07-02 Final data SPW47N60S5 Definition of diodes switching characteristics Page 9 2003-07-02 SPW47N60S5 Final data P-TO-247-3-1 15.9 5.03 20˚ 5˚ D 5.94 4.37 2.03 6.17 20.9 9.91 6.35 ø3.61 7 1.75 41.22 2.97 x 0.127 16 D 1.14 0.243 1.2 0.762 MAX. 2 2.4 +0.05 2.92 5.46 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12 Page 10 2003-07-02 Final data SPW47N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2003-07-02