SPW52N50C3 CoolMOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-247 VDS @ Tjmax 560 V RDS(on) 0.07 Ω ID 52 A • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPW52N50C3 Package PG-TO247 Marking 52N50C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value A TC = 25 °C 52 TC = 100 °C 30 Pulsed drain current, tp limited by Tjmax I D puls Avalanche energy, single pulse EAS Unit 156 1800 mJ I D = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1 I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR 20 A V Gate source voltage VGS ±20 Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 417 W Operating and storage temperature T j , T stg -55... +150 °C Reverse diode dv/dt Rev. 2.6 4) dv/dt Page 1 15 V/ns 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 400 V, ID = 52 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 0.3 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=20A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=2700μΑ, VGS=VDS Zero gate voltage drain current IDSS VDS=500V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.6 RG μA Tj=25°C, - 0.5 25 Tj=150°C - - 250 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=30A, Tj=25°C - 0.06 0.07 Tj=150°C - 0.16 - f=1MHz, open Drain - 0.7 - Page 2 nA 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol V DS≥2*I D*RDS(on)max, g fs Transconductance Conditions Values Unit min. typ. max. - 40 - S pF ID=30A Input capacitance Ciss V GS=0V, V DS=25V, - 6800 - Output capacitance Coss f=1MHz - 2200 - Reverse transfer capacitance Crss - 150 - - 212 - - 469 - Effective output capacitance, 2) Co(er) energy related V GS=0V, pF V DS=0V to 400V Effective output capacitance, 3) Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 20 - Rise time tr ID=52A, RG =1.8Ω - 30 - Turn-off delay time td(off) - 120 - Fall time tf - 10 - - 30 - - 160 - - 290 - - 5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=380V, ID=52A VDD=380V, ID=52A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=380V, ID=52A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 4I <=I , di/dt<=200A/us, V =400V, V <V , T <T . SD D DClink peak BR, DSS j j,max Identical low-side and high-side switch. Rev. 2.6 Page 3 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 52 - - 156 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=380V, IF=IS , - 580 - ns Reverse recovery charge Qrr diF/dt=100A/μs - 20 - μC Peak reverse recovery current Irrm - 70 - A Peak rate of fall of reverse dirr /dt - 900 - A/μs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.002689 R th2 Cth1 0.001081 0.005407 Cth2 0.004021 R th3 0.011 Cth3 0.005415 R th4 0.054 Cth4 0.014 R th5 0.071 Cth5 0.025 R th6 0.036 Cth6 0.158 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.6 Page 4 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 500 10 3 SPW52N50C3 A W 10 2 400 ID Ptot 350 300 10 1 250 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 0 200 150 10 -1 100 50 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 μs, VGS 10 0 3 280 K/W 20V A 7.5V 10 -1 7V ID ZthJC 200 160 10 6.5V -2 120 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 6V 80 5.5V 40 5V 4.5V 10 -4 -7 10 Rev. 2.6 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 Page 5 0 0 4 8 12 16 20 26 V VDS 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 μs, VGS parameter: Tj=150°C, V GS 160 0.5 20V Ω A 4V 4.5V 5V 5.5V 6V 6.5V 6.5V RDS(on) ID 120 6V 100 5.5V 80 60 0.4 0.35 0.3 0.25 5V 40 0.2 4.5V 20V 20 0.15 4V 0 0 4 8 12 16 20 0.1 0 26 V VDS 20 40 60 80 100 120 A 160 ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 30 A, VGS = 10 V parameter: tp = 10 μs 0.38 SPW52N50C3 280 Ω A 25°C 0.28 200 ID RDS(on) 0.32 0.24 160 0.2 120 0.16 150°C 0.12 80 98% 0.08 typ 40 0.04 0 -60 -20 20 60 100 °C 180 Tj Rev. 2.6 Page 6 0 0 1 2 3 4 5 6 7 8 V 10 VGS 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 52 A pulsed parameter: Tj , tp = 10 μs 16 10 3 SPW52N50C3 V SPW52N50C3 A 10 10 2 0.2 VDS max IF VGS 12 0.8 VDS max 8 6 10 1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 10 0 0 80 120 160 200 240 280 320 360nC 420 40 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 10 A, VDD = 50 V 20 2 A 16 mJ EAS IAR 14 12 Tj (START)=25°C 10 1 8 6 Tj(START)=125°C 0.5 4 2 0 -3 10 Rev. 2.6 10 -2 10 -1 10 0 10 1 10 2 μs 10 tAR 4 Page 7 0 20 40 60 80 100 120 160 °C Tj 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=1mJ SPW52N50C3 1000 V - 570 800 560 PAV V(BR)DSS 600 550 540 530 700 600 500 520 400 510 500 300 490 200 480 470 100 460 450 -60 -20 20 60 100 °C 0 4 10 180 10 5 10 Hz Tj f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 5 24 μJ pF Ciss 18 C Eoss 10 20 4 16 14 10 3 12 Coss 10 8 10 2 6 Crss 4 2 10 1 0 100 200 300 400 V 600 VDS Rev. 2.6 0 0 100 200 300 V 500 VDS Page 8 2008-02-11 6 SPW52N50C3 Definition of diodes switching characteristics Rev. 2.6 Page 9 2008-02-11 63:51& 3G72 Rev. 2.6 PDJH 80211 Please note the new package dimensions arccording to PCN 2009-134-A SPW52N50C3 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 Page 11 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A Data sheet erratum PCN 2009-134-A New package outlines TO-247 1 New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Rev. 2.0, 2010-02-01