SS2H9 & SS2H10 Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Low profile package • Guardring for overvoltage protection • Ideal for automated placement • Low power losses, high efficiency • Low forward voltage drop • Low leakage current • High surge capability DO-214AA (SMB) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 90 V, 100 V TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. IFSM 75 A VF 0.65 V MECHANICAL DATA Case: DO-214AA (SMB) IR 10 µA Epoxy meets UL 94V-0 flammability rating TJ max. 175 °C Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS2H9 SS2H10 MS9 MS10 90 100 UNIT Maximum repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at: TL = 130 °C IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 75 A V Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range Document Number: 88750 Revision: 19-May-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 SS2H9 & SS2H10 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) IF = 2.0 A IF = 2.0 A Maximum reverse current at rated VR (2) SYMBOL SS2H9 SS2H10 UNIT TJ = 25 °C TJ = 125 °C VF 0.79 0.65 V TJ = 25 °C TJ = 125 °C IR 10 4 µA mA Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS2H9 RθJA RθJL Maximum thermal resistance junction to lead TL = 25 °C (1) SS2H10 80 25 UNIT °C/W Note: (1) Units mounted on P.C.B. with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS2H9-E3/52T 0.096 52T 750 7" diameter plastic tape and reel SS2H9-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel SS2H9HE3/52T(1) 0.096 52T 750 7" diameter plastic tape and reel SS2H9HE3/5BT(1) 0.096 5BT 3200 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Average Forward Current (A) Average Forward Current (A) 2.5 2.0 1.5 1.0 0.5 75 50 25 0 0 25 50 75 100 125 150 175 1 10 100 TL - Lead Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Max Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88750 Revision: 19-May-08 SS2H9 & SS2H10 Vishay General Semiconductor 1000 TJ = 175 °C TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 1 TJ = 125 °C 0.1 TJ = 25 °C 10 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instanteous Forward Characteristics Figure 5. Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 10 000 Instantaneous Reverse Current (µA) 100 TJ = 175 °C 1000 TJ = 150 °C TJ = 125 °C 100 10 1 0.1 TJ = 25 °C 0.01 1 0.01 0.001 10 20 30 40 50 60 70 80 90 10 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance Per Leg PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 88750 Revision: 19-May-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1