SS4913 CMOS Omnipolar High Sensitivity Micropower Hall Switch Features Micropower consumption for battery powered applications Omnipolar, output switches with absolute value of North or South pole from magnet Operation down to 2.5V High sensitivity for direct reed switch replacement applications 3 pin SOT23 (suffix SO) General Description: The SS4913 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology .It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the Bop/Brp thresholds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. The output transistor of the SS4913 will be latched on (Bop) in the presence of a sufficiently strong South or North magnetic field facing the marked side of the package. The output will be latched off (Brp) in the absence of a magnetic field. Applications Solid state switch Handheld Wireless Handset Awake Switch Lid close sensor for battery powered devices Magnet proximity sensor for reed switch replacement in low duty cycle applications 1 V2.00 Mayr 1, 2012 SS4913 CMOS Omnipolar High Sensitivity Micropower Hall Switch Typical Application Circuit TSOT-23（Top View） SEC's pole-independent sensing technique allows for operation with either a north pole or south pole magnet orientation, enhancing the manufacturability of the device. The state-of-the-art technology provides the same output polarity for either pole face. It is strongly recommended that an external bypass capacitor be connected (in close proximity to the Hall sensor) between the supply and ground of the device to reduce both external noise and noise generated by the chopper-stabilization technique. This is especially true due to the relatively high impedance of battery supplies. Functional Block Diagram 2 V2.00 Mayr 1, 2012 SS4913 CMOS Omnipolar High Sensitivity Micropower Hall Switch Pin Definitions and Descriptions SOT Pin № Name Type Function 1 VDD Supply Supply Voltage pin 2 OUT Output Open Drain Output pin 3 GND Ground Ground pin Internal Timing Circuit Current Period Iaw Sample & Output Latched Iav Isp Awake Taw:175μs Sleep Tsl:70ms 0 Time 3 V2.00 Mayr 1, 2012 SS4913 CMOS Omnipolar High Sensitivity Micropower Hall Switch Absolute Maximum Ratings Parameter Symbol Value Units Supply Voltage(operating) V DD 6 V Supply Current I DD 5 mA Output Voltage V OUT 6 V Output Curent I OUT 5 mA Operating Temperature Range TA -40 to 85 C Storage Temperature Rang TS -50 to 150 C - 4000 V ESD Sensitivity Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum rated conditions for extended periods may affect device reliability. DC Electrical Characteristics DC Operating Parameters: T A = 25℃, V DD =2.75V. Parameter Symbol Test Conditions Min Typ Max Units Operating voltage V DD Operating 2.5 3 5.5 V Supply current I DD Average Output Current I OUT Saturation Voltage V SAT I OUT =1mA Awake mode time T AW Operating Sleep mode time T SL Operating 5 μA 1.0 mA 0.4 V 175 μS 70 mS Magnetic Characteristics Output Voltage(V) 3.0 OFF 2.5 2.0 B OPN 1.5 B RPS B OPS B RPN 1.0 0.5 0 ON -80 -60 -40 -20 0 20 40 60 80 Magnetic Flux(Gauss) 4 V2.00 Mayr 1, 2012 SS4913 CMOS Omnipolar High Sensitivity Micropower Hall Switch Operating Parameters: T A = 25℃, V DD =2.75V DC . PARAMETER Symbol Min Type Max Units Operating Point Bop - +/-35 +/-60 Gs Release Point Brp +/-5 +/-21 - Gs Hysteresis Bhys - 14 - Gs Unit Notes ESD Protection Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7 Parameter Symbol Limit Values Min ESD Voltage Max 4 V ESD 5 kV V2.00 Mayr 1, 2012 SS4913 CMOS Omnipolar High Sensitivity Micropower Hall Switch Performance Characteristics 6 V2.00 Mayr 1, 2012 SS4913 CMOS Omnipolar High Sensitivity Micropower Hall Switch Unique Features CMOS Hall IC Technology The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage, which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be placed in less space. The small chip size also contributes to lower physical stress and less power consumption. Installation Comments Consider temperature coefficients of Hall IC and magnetic, as well as air gap and life time variations. Observe temperature limits during wave soldering. Typical IR solder-reflow profile: No Rapid Heating and Cooling. Recommended Preheating for max. 2minutes at 150C Recommended Reflowing for max. 5seconds at 240C ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products. 7 V2.00 Mayr 1, 2012 SS4913 CMOS Omnipolar High Sensitivity Micropower Hall Switch Package Information Package TSOT-23: TSOT-23 Package Hall Location Ordering Information Part No. Pb-free Temperature Code Package Code Packing SS4913ESOT YES -40°C to 85°C SOT-23 7-in. reel, 3000 pieces/reel SS4913KSOT YES -40°C to 125°C SOT-23 7-in. reel, 3000 pieces/reel SS4913LSOT YES -40°C to 150°C SOT-23 7-in. reel, 3000 pieces/reel 8 V2.00 Mayr 1, 2012