SSD40P04-20D P-Ch Enhancement Mode Power MOSFET -36A, -40V, RDS(ON) 30mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. TO-252(D-Pack) FEATURES Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Extended VGS range (±25) for battery pack applications. A B C D GE PRODUCT SUMMARY VDS(V) -40 PRODUCT SUMMARY RDS(on) m( 30@VGS= -10V 40@VGS= -4.5V K ID(A) -36 -29 M REF. Gate A B C D E F G H Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current a b Continuous Source Current (Diode Conduction) Total Power Dissipation N O P J Drain Continuous Drain Current HF a a Operating Junction and Storage Temperature Range Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 UNIT VDS -40 V VGS ±20 V ID @TA=25℃ 36 A IDM ±40 A IS -30 A PD @TA=25℃ 50 W TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a RθJA 50 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.0 °C / W Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 14-Jul-2010 Rev.B Any changes of specification will not be informed individually. Page 1 of 5 SSD40P04-20D P-Ch Enhancement Mode Power MOSFET -36A, -40V, RDS(ON) 30mΩ Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) -1 - - Gate-Body Leakage IGSS - - ±100 Zero Gate Voltage Drain Current IDSS - - -1 - - -5 On-State Drain Current a ID(on) -41 - - - - 30 - - 40 VDS= VGS, ID = -250 μA nA μA A VDS = 0V, VGS= ±25V VDS= -24V, VGS= 0V VDS= -24V, VGS=0V, TJ=55°C VDS = -5V, VGS= -10V VGS= -10V, ID= -36A Drain-Source On-Resistance a RDS(ON) Forward Transconductance a gfs - 31 - S VDS= -15V, ID= -36A Diode Forward Voltage VSD - -0.7 - V IS= -41 A, VGS= 0 V mΩ VGS= -4.5V, ID= -29A Dynamic b Total Gate Charge Qg - 13.9 - Gate-Source Charge Qgs - 5.2 - Gate-Drain Charge Qgd - 5.8 - Input Capacitance Ciss - 1583 - Output Capacitance Coss - 278 - Reverse Transfer Capacitance Crss - 183 - nC VDS = -15 V VGS = -4.5 V ID = -36 A pF VDS = -15 V VGS = 0 V f = 1MHz nS VDD= -15 V ID= -41 A VGEN = -10 V RL= 15 RG= 6 Switching Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) - 15 - Tr - 12 - Td(off) - 62 - Tf - 46 - Notes a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 14-Jul-2010 Rev.B Any changes of specification will not be informed individually. Page 2 of 5 SSD40P04-20D Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -36A, -40V, RDS(ON) 30mΩ CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Jul-2010 Rev.B Any changes of specification will not be informed individually. Page 3 of 5 SSD40P04-20D Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -36A, -40V, RDS(ON) 30mΩ CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Jul-2010 Rev.B Any changes of specification will not be informed individually. Page 4 of 5 SSD40P04-20D Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -36A, -40V, RDS(ON) 30mΩ CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Jul-2010 Rev.B Any changes of specification will not be informed individually. Page 5 of 5