SSD95N03 96A , 30V , RDS(ON) 4mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) The SSD95N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications . FEATURES A B C D Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available GE K M MARKING 95N03 A B C D E F G H PACKAGE INFORMATION Package MPQ TO-252 Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.15 2.40 0.45 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20 Leader Size 2.5K N O P J REF. Date Code HF Millimeter Min. Max. 2.30 REF. 0.64 0.90 0.50 1.1 0.9 1.65 0 0.15 0.43 0.58 REF. J K M N O P 2 Drain 13 inch 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V 96 A 88 A IDM 192 A PD 62.5 W 0.42 W / °C EAS 317 mJ IAS 53.8 A TJ, TSTG -55~175 °C RθJA 62 °C / W RθJC 2.4 °C / W Continuous Drain Current 1 VGS=10V, TC=25°C VGS=10V,TC=100°C Pulsed Drain Current 2 Total Power Dissipation 4 TC=25°C ID Linear Derating Factor Single Pulse Avalanche Energy 3 Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case http://www.SeCoSGmbH.com/ 24-Nov-2011 Rev. A 1 1 Any changes of specification will not be informed individually. Page 1 of 4 SSD95N03 96A , 30V , RDS(ON) 4mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Typ. Max. Unit 30 - - V - 0.0213 - V / °C Reference to 25°C, ID=1mA VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250µA gfs - 26.5 - S VDS=5V, ID=30A IGSS - - ±100 nA VGS= ±20V - - 1 Symbol Min. Teat Conditions Static Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient △BVDSS /△TJ Gate-Threshold Voltage Forward Transconductance Gate-Source Leakage Current TJ =25°C Drain-Source Leakage Current Static Drain-Source On-Resistance 2 - - 5 - 3.4 4 RDS(ON) - 5.2 6 Qg - 31.6 - Gate-Source Charge Qgs - 8.6 - Gate-Drain (“Miller”) Change Qgd - 11.7 - Td(on) - 9 - Tr - 19 - Td(off) - 58 - Tf - 15.2 - Input Capacitance Ciss - 3075 4000 Output Capacitance Coss - 400 530 Reverse Transfer Capacitance Crss - 315 - Rise Time Turn-off Delay Time Fall Time V DS=24V, VGS=0 VGS=10V, ID=30A mΩ Total Gate Charge Turn-on Delay Time VDS=24V, VGS=0 µA IDSS TJ =55°C VGS=0, ID=250µA VGS=4.5V, ID=15A nC ID=15A VDS=15V VGS=4.5V nS VDD=15 V ID=15A VGS=10V RG=3.3 Ω pF VGS =0 VDS=15 V f =1.0MHz - mJ VDD=25V,L=0.1mH , IAS=30A Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 98 - Source-Drain Diode Diode Forward Voltage 2 Continuous Source Current Pulsed Source Current 2,6 1,6 VSD - - 1.2 V IS - - 96 A ISM - - 192 A IS=30A, VGS=0 VD=VG=0, Force Current Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed , pulse width≦300µs , duty cycle≦2% 3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A 4. The power dissipation is limited by 175°C junct ion temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. http://www.SeCoSGmbH.com/ 24-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSD95N03 Elektronische Bauelemente 96A , 30V , RDS(ON) 4mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSD95N03 Elektronische Bauelemente 96A , 30V , RDS(ON) 4mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4