SECOS SSE90N06-10P

SSE90N06-10P
90 A, 60 V, RDS(ON) 9.9 m
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
TO-220P
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density
trench process to provide low RDS(on) and to ensure minimal power loss
and heat dissipation. Typical applications are DC-DC converters and
power management in portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and cordless telephones.
TYPICAL APPLICATIONS




D
C
B
R
T
A
E
S
G
Low RDS(on) Provides Higher Efficiency and
Extends Battery Life.
Low Thermal impedance copper leadframe
TO-220P saves board space.
Fast Switch speed.
High performance trench technology.
F
H
J
I
K
L
M
X
U
P
N
PRODUCT SUMMARY
SSE90N06-10P
VDS(V)
RDS(on) (m
9.9@VGS= 10V
13@VGS= 4.5V
60
O
ID(A)
Q
1 2 3
90 1
V
W
Q
Dimensions in millimeters
REF.
N-Channel
A
B
C
D
E
F
G
H
J
K
L
M
D2
G1
S3
Millimeter
Min.
Max.
7.90
8.10
9.45
9.65
9.87
10.47
11.50
1.06
1.46
2.60
3.00
6.30
6.70
8.35
8.75
1.60 Typ.
1.10
1.30
1.17
1.37
1.50
REF.
N
O
P
Q
R
S
T
U
V
W
X
Millimeter
Min.
Max.
0.75
0.95
0.66
0.86
13.50
14.50
2.44
3.44
3.50
3.70
1.15
1.45
4.30
4.70
2.7
1.89
3.09
0.40
0.60
2.60
3.60
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) a
Power Dissipation 1
Operating Junction and Storage Temperature Range
TC= 25°C
TC= 25°C
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Ratings
Maximum
Unit
60
±20
90
240
90
300
-55 ~ 175
°C
Symbol
Maximum
Unit
RJA
RJC
62.5
0.5
°C / W
V
V
A
A
A
W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient 1
Maximum Junction to Case
Notes
1
Package Limited.
2
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
29-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
SSE90N06-10P
90 A, 60 V, RDS(ON) 9.9 m
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Symbol Min.
Typ. Max.
Unit
Test Conditions
VGS(th)
1
-
-
V
VDS=VGS, ID= 250uA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS= 0V, VGS= 20V
Zero Gate Voltage Drain Current
IDSS
-
-
1
-
-
25
120
-
-
-
-
9.9
-
-
13
-
S
VDS= 15V, ID= 30A
-
V
IS= 34A, VGS= 0V
On-State Drain Current
1
Drain-Source On-Resistance 1
ID(on)
RDS(ON)
Forward Transconductance 1
gfs
-
30
Diode Forward Voltage
VSD
-
1.1
DYNAMIC
Qg
-
49
-
Gate-Source Charge
Qgs
-
9.0
-
Gate-Drain Charge
Qgd
-
10
-
Turn-on Delay Time
Td(on)
-
16
-
Tr
-
10
-
Td(off)
-
50
-
Tf
-
23
-
Turn-off Delay Time
Fall Time
A
VDS= 48V, VGS= 0V
VDS= 48V, VGS= 0V, TJ= 55°C
VDS = 5V, VGS= 10V
mΩ
VGS= 10V, ID= 30A
VGS= 4.5V, ID= 20A
2
Total Gate Charge
Rise Time
uA
nC
VDS= 15V, VGS= 4.5V,
ID= 90A
nS
VDD= 25V, VGEN= 10V,
RL= 25, ID= 34A
Notes
1
Pulse test:PW ≦ 300 us duty cycle ≦ 2%.
2
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
29-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2