SSE90N06-15P 90 A, 60 V, RDS(ON) 10.5 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. TYPICAL APPLICATIONS D C B R T A E S G Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal impedance copper leadframe TO-220P saves board space. Fast Switch speed. High performance trench technology. F H J I K L M X U P N PRODUCT SUMMARY SSE90N06-15P VDS(V) RDS(on) (m 10.5@VGS= 10V 13@VGS= 4.5V 60 O ID(A) Q 1 2 3 90 1 V W Q Dimensions in millimeters REF. N-Channel A B C D E F G H J K L M D2 G1 S3 Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 1.60 Typ. 1.10 1.30 1.17 1.37 1.50 REF. N O P Q R S T U V W X Millimeter Min. Max. 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) a Power Dissipation 1 Operating Junction and Storage Temperature Range TC= 25°C TC= 25°C VDS VGS ID IDM IS PD Tj, Tstg Ratings Maximum Unit 60 ±20 90 240 90 300 -55 ~ 175 °C Symbol Maximum Unit RJA RJC 62.5 0.5 °C / W V V A A A W THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient 1 Maximum Junction to Case Notes 1 Package Limited. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 29-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSE90N06-15P 90 A, 60 V, RDS(ON) 10.5 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Symbol Min. Typ. Max. Unit Test Conditions VGS(th) 1 - - V VDS=VGS, ID= 250uA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= 20V Zero Gate Voltage Drain Current IDSS - - 1 - - 25 120 - - - - 10.5 - - 13 - S VDS= 15V, ID= 30A - V IS= 34A, VGS= 0V On-State Drain Current 1 Drain-Source On-Resistance 1 ID(on) RDS(ON) Forward Transconductance 1 gfs - 30 Diode Forward Voltage VSD - 1.1 DYNAMIC Qg - 49 100 Gate-Source Charge Qgs - 9.0 - Gate-Drain Charge Qgd - 10 - Turn-on Delay Time Td(on) - 16 - Tr - 10 - Td(off) - 50 - Tf - 23 - Input Capacitance Ciss - 1850 - Output Capacitance Coss - 290 - Reverse Transfer Capacitance Crss - 100 - Turn-off Delay Time Fall Time A VDS= 48V, VGS= 0V VDS= 48V, VGS= 0V, TJ= 55°C VDS = 5V, VGS= 10V mΩ VGS= 10V, ID= 30A VGS= 4.5V, ID= 20A 2 Total Gate Charge Rise Time uA nC VDS= 15V, VGS= 4.5V, ID= 90A nS VDD= 25V, VGEN= 10V, RL= 25, ID= 34A pF VDS= 15V, VGS= 0V, f= 1MHz Notes 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 29-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSE90N06-15P Elektronische Bauelemente 90 A, 60 V, RDS(ON) 10.5 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 29-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSE90N06-15P Elektronische Bauelemente 90 A, 60 V, RDS(ON) 10.5 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 29-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4