SSE90N08-08 90A , 80V , RDS(ON) 11mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P FEATURES D Low RDS(on) trench technology. Low thermal impedance Fast Switch Speed. C B R T E A S G APPLICATIONS F I H White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits J K L U M X P N O Q V W Q 1 2 3 N-Channel REF. A B C D E F G H I J K L D2 G1 S3 Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 14.7 15.3 1.60 Typ. 1.10 1.30 1.17 1.37 REF. M N O P Q R S T U V W X Millimeter Min. Max. 1.50 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V ID 90 A IDM 350 A IS 120 A PD 300 W TJ, TSTG -55~175 °C Continuous Drain Current Pulsed Drain Current 1 TA=25°C 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 TA=25°C Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient 1 t≦10sec 62.5 RθJA Steady State °C / W 0.5 Notes: 1 Package Limited. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 14-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSE90N08-08 90A , 80V , RDS(ON) 11mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250µA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS=±20V - - 1 Zero Gate Voltage Drain Current IDSS On-State Drain Current Drain-Source On-Resistance ID(on) RDS(ON) µA - - 25 45 - - - - 11 VDS=64V, VGS=0, TJ=55°C A VDS=5V, VGS=10V mΩ - - 13 VDS=64V, VGS=0 VGS=10V, ID=45A VGS=4.5V, ID=44A Forward Transconductance gfs - 40 - S VDS=15V, ID=45A Diode Forward Voltage VSD - 0.9 - V IS=60A, VGS=0 Dynamic Total Gate Charge Qg - 58 - Gate-Source Charge Qgs - 14 - Gate-Drain Charge Qgd - 39 - Turn-on Delay Time Td(on) - 19 - Tr - 45 - Td(off) - 178 - Tf - 62 - Input Capacitance Ciss - 4021 - Output Capacitance Coss - 449 - Reverse Transfer Capacitance Crss - 440 - Rise Time Turn-off Delay Time Fall Time nC VDS=40V, VGS=4.5V, ID=20A nS VDS=40V, VGEN=10V, RL=2Ω, ID=20A , RGEN=6Ω pF VDS=15V,VGS=0, f =1MHz Notes: 1 Pulse test：PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 14-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSE90N08-08 Elektronische Bauelemente 90A , 80V , RDS(ON) 11mΩ Ω N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 14-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSE90N08-08 Elektronische Bauelemente 90A , 80V , RDS(ON) 11mΩ Ω N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 14-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4