SSE90P06-08P -90A , -60V , RDS(ON) 12mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. D C B R T E FEATURES A S Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology. G F I H J K L U M X P N APPLICATION O DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Q V W Q 1 2 3 P-Channel D2 G1 S3 REF. A B C D E F G H I J K L Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 14.7 15.3 1.60 Typ. 1.10 1.30 1.17 1.37 REF. M N O P Q R S T U V W X Millimeter Min. Max. 1.50 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TC=25°C 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 TC=25°C Operating Junction and Storage Temperature Range Symbol Ratings Unit VDS -60 V VGS ±20 V ID -90 A IDM -390 A IS -110 A PD 300 W TJ, TSTG -55~175 °C Thermal Resistance Rating Maximum Junction to Ambient 1 RθJA 62.5 RθJC 0.5 °C / W Maximum Junction to Case Notes: 1 Package Limited. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 25-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SSE90P06-08P -90A , -60V , RDS(ON) 12mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) -1 - - V VDS=VGS, ID= -250µA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS= -20V - - -1 Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 1 RDS(ON) µA - - -25 -120 - - - - 12 VDS= -5V, VGS= -10V VGS= -10V, ID= -2A - 14 gfs - 30 - S VDS= -15V, ID= -2A VSD - -1.1 VGS= -4.5V, ID= -2A - V IS= -2A, VGS=0 2 Qg - 100 - Gate-Source Charge Qgs - 30 - Gate-Drain Charge Qgd - 40 - Turn-on Delay Time Td(on) - 20 - Tr - 20 - Td(off) - 300 - Tf - 100 - Fall Time A - Total Gate Charge Turn-off Delay Time VDS= -48V, VGS=0, TJ=55°C mΩ Dynamic Rise Time VDS= -48V, VGS=0 nC VDS= -15V, VGS= -4.5V, ID= -2A nS VDD= -25V, VGEN= -10V, RL=25Ω, ID= -34A Notes: 1 Pulse test：PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 25-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2